FR2779009B1 - Sequencage automatique d'operations de focalisation de faisceaux ioniques - Google Patents
Sequencage automatique d'operations de focalisation de faisceaux ioniquesInfo
- Publication number
- FR2779009B1 FR2779009B1 FR9905896A FR9905896A FR2779009B1 FR 2779009 B1 FR2779009 B1 FR 2779009B1 FR 9905896 A FR9905896 A FR 9905896A FR 9905896 A FR9905896 A FR 9905896A FR 2779009 B1 FR2779009 B1 FR 2779009B1
- Authority
- FR
- France
- Prior art keywords
- ion beams
- automatic sequencing
- focusing operations
- focusing
- operations
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000012163 sequencing technique Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/082,455 US6031229A (en) | 1998-05-20 | 1998-05-20 | Automatic sequencing of FIB operations |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2779009A1 FR2779009A1 (fr) | 1999-11-26 |
FR2779009B1 true FR2779009B1 (fr) | 2003-01-03 |
Family
ID=22171331
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9905896A Expired - Fee Related FR2779009B1 (fr) | 1998-05-20 | 1999-05-10 | Sequencage automatique d'operations de focalisation de faisceaux ioniques |
Country Status (3)
Country | Link |
---|---|
US (1) | US6031229A (fr) |
DE (1) | DE19922653A1 (fr) |
FR (1) | FR2779009B1 (fr) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1332510B1 (fr) | 2000-09-20 | 2011-11-16 | Fei Company | Controle en temps reel permettant a la fois l'imagerie et l'exposition dans des systemes a faisceau de particule chargee |
US6824655B2 (en) | 2001-08-27 | 2004-11-30 | Credence Systems Corporation | Process for charged particle beam micro-machining of copper |
US6855622B2 (en) | 2002-05-30 | 2005-02-15 | Nptest, Llc | Method and apparatus for forming a cavity in a semiconductor substrate using a charged particle beam |
US6955930B2 (en) | 2002-05-30 | 2005-10-18 | Credence Systems Corporation | Method for determining thickness of a semiconductor substrate at the floor of a trench |
US7081369B2 (en) * | 2003-02-28 | 2006-07-25 | Intel Corporation | Forming a semiconductor device feature using acquired parameters |
US20050022743A1 (en) * | 2003-07-31 | 2005-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Evaporation container and vapor deposition apparatus |
US20050173631A1 (en) * | 2004-02-11 | 2005-08-11 | Valery Ray | Determining end points during charged particle beam processing |
US6952014B1 (en) * | 2004-04-06 | 2005-10-04 | Qualcomm Inc | End-point detection for FIB circuit modification |
DE102006023946A1 (de) * | 2006-05-17 | 2007-11-22 | Infineon Technologies Ag | Verfahren und Vorrichtung zur Reduktion einer Verformung eines Wafers |
US7535000B2 (en) * | 2006-05-23 | 2009-05-19 | Dcg Systems, Inc. | Method and system for identifying events in FIB |
JP2008010818A (ja) * | 2006-06-01 | 2008-01-17 | Sumitomo Electric Ind Ltd | 基板、基板検査方法、素子および基板の製造方法 |
JP2009004306A (ja) * | 2007-06-25 | 2009-01-08 | Elpida Memory Inc | Fib加工装置及び方法 |
US20130161181A1 (en) * | 2011-12-21 | 2013-06-27 | Hitachi Global Storage Technologies Netherlands B.V. | Method for manufacturing a magnetic recording disk with improved yield |
US9312141B2 (en) | 2013-11-21 | 2016-04-12 | HGST Netherlands B.V. | Vapor phase chemical mechanical polishing of magnetic recording disks |
KR102410666B1 (ko) | 2015-01-09 | 2022-06-20 | 삼성전자주식회사 | 반도체 소자의 계측 방법, 및 이를 이용한 반도체 소자의 제조방법 |
US11315754B2 (en) * | 2020-04-27 | 2022-04-26 | Applied Materials Israel Ltd. | Adaptive geometry for optimal focused ion beam etching |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0262039A (ja) * | 1988-08-29 | 1990-03-01 | Hitachi Ltd | 多層素子の微細加工方法およびその装置 |
US5140164A (en) * | 1991-01-14 | 1992-08-18 | Schlumberger Technologies, Inc. | Ic modification with focused ion beam system |
US5395769A (en) * | 1992-06-26 | 1995-03-07 | International Business Machines Corporation | Method for controlling silicon etch depth |
DE4421517A1 (de) * | 1993-06-28 | 1995-01-05 | Schlumberger Technologies Inc | Verfahren zum Abtrag oder Auftrag von Material mittels eines Partikelstrahls und Vorrichtung zu seiner Durchführung |
US5530372A (en) * | 1994-04-15 | 1996-06-25 | Schlumberger Technologies, Inc. | Method of probing a net of an IC at an optimal probe-point |
JPH09283496A (ja) * | 1996-04-18 | 1997-10-31 | Hitachi Ltd | 荷電粒子ビーム照射によるパターン形成方法及びその装置 |
-
1998
- 1998-05-20 US US09/082,455 patent/US6031229A/en not_active Expired - Fee Related
-
1999
- 1999-05-10 FR FR9905896A patent/FR2779009B1/fr not_active Expired - Fee Related
- 1999-05-18 DE DE19922653A patent/DE19922653A1/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
US6031229A (en) | 2000-02-29 |
FR2779009A1 (fr) | 1999-11-26 |
DE19922653A1 (de) | 1999-11-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20060131 |