FR2779009B1 - Sequencage automatique d'operations de focalisation de faisceaux ioniques - Google Patents

Sequencage automatique d'operations de focalisation de faisceaux ioniques

Info

Publication number
FR2779009B1
FR2779009B1 FR9905896A FR9905896A FR2779009B1 FR 2779009 B1 FR2779009 B1 FR 2779009B1 FR 9905896 A FR9905896 A FR 9905896A FR 9905896 A FR9905896 A FR 9905896A FR 2779009 B1 FR2779009 B1 FR 2779009B1
Authority
FR
France
Prior art keywords
ion beams
automatic sequencing
focusing operations
focusing
operations
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9905896A
Other languages
English (en)
Other versions
FR2779009A1 (fr
Inventor
David M Keckley
Debra M Yung
Roger A Nicholson
Xavier Larduinat
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schlumberger Technologies Inc
Original Assignee
Schlumberger Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schlumberger Technologies Inc filed Critical Schlumberger Technologies Inc
Publication of FR2779009A1 publication Critical patent/FR2779009A1/fr
Application granted granted Critical
Publication of FR2779009B1 publication Critical patent/FR2779009B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
FR9905896A 1998-05-20 1999-05-10 Sequencage automatique d'operations de focalisation de faisceaux ioniques Expired - Fee Related FR2779009B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/082,455 US6031229A (en) 1998-05-20 1998-05-20 Automatic sequencing of FIB operations

Publications (2)

Publication Number Publication Date
FR2779009A1 FR2779009A1 (fr) 1999-11-26
FR2779009B1 true FR2779009B1 (fr) 2003-01-03

Family

ID=22171331

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9905896A Expired - Fee Related FR2779009B1 (fr) 1998-05-20 1999-05-10 Sequencage automatique d'operations de focalisation de faisceaux ioniques

Country Status (3)

Country Link
US (1) US6031229A (fr)
DE (1) DE19922653A1 (fr)
FR (1) FR2779009B1 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1332510B1 (fr) 2000-09-20 2011-11-16 Fei Company Controle en temps reel permettant a la fois l'imagerie et l'exposition dans des systemes a faisceau de particule chargee
US6824655B2 (en) 2001-08-27 2004-11-30 Credence Systems Corporation Process for charged particle beam micro-machining of copper
US6855622B2 (en) 2002-05-30 2005-02-15 Nptest, Llc Method and apparatus for forming a cavity in a semiconductor substrate using a charged particle beam
US6955930B2 (en) 2002-05-30 2005-10-18 Credence Systems Corporation Method for determining thickness of a semiconductor substrate at the floor of a trench
US7081369B2 (en) * 2003-02-28 2006-07-25 Intel Corporation Forming a semiconductor device feature using acquired parameters
US20050022743A1 (en) * 2003-07-31 2005-02-03 Semiconductor Energy Laboratory Co., Ltd. Evaporation container and vapor deposition apparatus
US20050173631A1 (en) * 2004-02-11 2005-08-11 Valery Ray Determining end points during charged particle beam processing
US6952014B1 (en) * 2004-04-06 2005-10-04 Qualcomm Inc End-point detection for FIB circuit modification
DE102006023946A1 (de) * 2006-05-17 2007-11-22 Infineon Technologies Ag Verfahren und Vorrichtung zur Reduktion einer Verformung eines Wafers
US7535000B2 (en) * 2006-05-23 2009-05-19 Dcg Systems, Inc. Method and system for identifying events in FIB
JP2008010818A (ja) * 2006-06-01 2008-01-17 Sumitomo Electric Ind Ltd 基板、基板検査方法、素子および基板の製造方法
JP2009004306A (ja) * 2007-06-25 2009-01-08 Elpida Memory Inc Ｆｉｂ加工装置及び方法
US20130161181A1 (en) * 2011-12-21 2013-06-27 Hitachi Global Storage Technologies Netherlands B.V. Method for manufacturing a magnetic recording disk with improved yield
US9312141B2 (en) 2013-11-21 2016-04-12 HGST Netherlands B.V. Vapor phase chemical mechanical polishing of magnetic recording disks
KR102410666B1 (ko) 2015-01-09 2022-06-20 삼성전자주식회사 반도체 소자의 계측 방법, 및 이를 이용한 반도체 소자의 제조방법
US11315754B2 (en) * 2020-04-27 2022-04-26 Applied Materials Israel Ltd. Adaptive geometry for optimal focused ion beam etching

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0262039A (ja) * 1988-08-29 1990-03-01 Hitachi Ltd 多層素子の微細加工方法およびその装置
US5140164A (en) * 1991-01-14 1992-08-18 Schlumberger Technologies, Inc. Ic modification with focused ion beam system
US5395769A (en) * 1992-06-26 1995-03-07 International Business Machines Corporation Method for controlling silicon etch depth
DE4421517A1 (de) * 1993-06-28 1995-01-05 Schlumberger Technologies Inc Verfahren zum Abtrag oder Auftrag von Material mittels eines Partikelstrahls und Vorrichtung zu seiner Durchführung
US5530372A (en) * 1994-04-15 1996-06-25 Schlumberger Technologies, Inc. Method of probing a net of an IC at an optimal probe-point
JPH09283496A (ja) * 1996-04-18 1997-10-31 Hitachi Ltd 荷電粒子ビーム照射によるパターン形成方法及びその装置

Also Published As

Publication number Publication date
US6031229A (en) 2000-02-29
FR2779009A1 (fr) 1999-11-26
DE19922653A1 (de) 1999-11-25

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20060131