FR2772187B1 - PROCESS AND DEVICE FOR MANUFACTURING III-N SEMICONDUCTOR MATERIALS BY AMMONIA PHOTOLYSIS - Google Patents

PROCESS AND DEVICE FOR MANUFACTURING III-N SEMICONDUCTOR MATERIALS BY AMMONIA PHOTOLYSIS

Info

Publication number
FR2772187B1
FR2772187B1 FR9715553A FR9715553A FR2772187B1 FR 2772187 B1 FR2772187 B1 FR 2772187B1 FR 9715553 A FR9715553 A FR 9715553A FR 9715553 A FR9715553 A FR 9715553A FR 2772187 B1 FR2772187 B1 FR 2772187B1
Authority
FR
France
Prior art keywords
ammonia
photolysis
epitaxial growth
iii
nitrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9715553A
Other languages
French (fr)
Other versions
FR2772187A1 (en
Inventor
Jean Louis Guyaux
Jean Charles Garcia
Daniel Leguen
Jean Massies
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR9715553A priority Critical patent/FR2772187B1/en
Publication of FR2772187A1 publication Critical patent/FR2772187A1/en
Application granted granted Critical
Publication of FR2772187B1 publication Critical patent/FR2772187B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

A III-N semiconductor nitride of Al-N, Ga-N or In-N type is produced by epitaxial growth of the Al, Ga or In semiconductor material in the presence of photolytically decomposed ammonia. An Independent claim is also included for a III-N semiconductor nitride production apparatus comprising an epitaxial growth reactor, into which are injected nitrogen products from an ammonia photolysis chamber. Preferred Features: A low pressure mercury vapor lamp, emitting at a wavelength close to 185 nm, is used for photolytic decomposition of the ammonia into nitrogen radicals and hydrazine. Certain nitrogen-containing products (especially hydrazine) of photolysis are condensed out and then injected into the epitaxial growth reactor.
FR9715553A 1997-12-09 1997-12-09 PROCESS AND DEVICE FOR MANUFACTURING III-N SEMICONDUCTOR MATERIALS BY AMMONIA PHOTOLYSIS Expired - Fee Related FR2772187B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR9715553A FR2772187B1 (en) 1997-12-09 1997-12-09 PROCESS AND DEVICE FOR MANUFACTURING III-N SEMICONDUCTOR MATERIALS BY AMMONIA PHOTOLYSIS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9715553A FR2772187B1 (en) 1997-12-09 1997-12-09 PROCESS AND DEVICE FOR MANUFACTURING III-N SEMICONDUCTOR MATERIALS BY AMMONIA PHOTOLYSIS

Publications (2)

Publication Number Publication Date
FR2772187A1 FR2772187A1 (en) 1999-06-11
FR2772187B1 true FR2772187B1 (en) 2000-03-17

Family

ID=9514357

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9715553A Expired - Fee Related FR2772187B1 (en) 1997-12-09 1997-12-09 PROCESS AND DEVICE FOR MANUFACTURING III-N SEMICONDUCTOR MATERIALS BY AMMONIA PHOTOLYSIS

Country Status (1)

Country Link
FR (1) FR2772187B1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2888664B1 (en) 2005-07-18 2008-05-02 Centre Nat Rech Scient METHOD FOR MAKING A BIPOLAR HETEROJUNCTION TRANSISTOR
FR2898434B1 (en) 2006-03-13 2008-05-23 Centre Nat Rech Scient MONOLITHIC WHITE ELECTROLUMINESCENT DIODE

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59207631A (en) * 1983-05-11 1984-11-24 Semiconductor Res Found Dry process employing photochemistry
US4987008A (en) * 1985-07-02 1991-01-22 Semiconductor Energy Laboratory Co., Ltd. Thin film formation method
JPH04170397A (en) * 1990-11-05 1992-06-18 Matsushita Electric Ind Co Ltd Production of gallium nitride thin film

Also Published As

Publication number Publication date
FR2772187A1 (en) 1999-06-11

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