FR2765400B1 - Procede pour fabriquer une structure en materiau semi-conducteur et structure en materiau semi-conducteur absorbant les infrarouges, a bande interdite variable - Google Patents

Procede pour fabriquer une structure en materiau semi-conducteur et structure en materiau semi-conducteur absorbant les infrarouges, a bande interdite variable

Info

Publication number
FR2765400B1
FR2765400B1 FR9803477A FR9803477A FR2765400B1 FR 2765400 B1 FR2765400 B1 FR 2765400B1 FR 9803477 A FR9803477 A FR 9803477A FR 9803477 A FR9803477 A FR 9803477A FR 2765400 B1 FR2765400 B1 FR 2765400B1
Authority
FR
France
Prior art keywords
semiconductor material
variable
manufacturing
infrared absorbent
prohibited band
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9803477A
Other languages
English (en)
Other versions
FR2765400A1 (fr
Inventor
Pradip Mitra
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xylon LLC
Original Assignee
Lockheed Corp
Lockheed Martin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lockheed Corp, Lockheed Martin Corp filed Critical Lockheed Corp
Publication of FR2765400A1 publication Critical patent/FR2765400A1/fr
Application granted granted Critical
Publication of FR2765400B1 publication Critical patent/FR2765400B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
FR9803477A 1997-06-26 1998-03-20 Procede pour fabriquer une structure en materiau semi-conducteur et structure en materiau semi-conducteur absorbant les infrarouges, a bande interdite variable Expired - Lifetime FR2765400B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/882,881 US5998235A (en) 1997-06-26 1997-06-26 Method of fabrication for mercury-based quaternary alloys of infrared sensitive materials

Publications (2)

Publication Number Publication Date
FR2765400A1 FR2765400A1 (fr) 1998-12-31
FR2765400B1 true FR2765400B1 (fr) 1999-09-10

Family

ID=25381532

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9803477A Expired - Lifetime FR2765400B1 (fr) 1997-06-26 1998-03-20 Procede pour fabriquer une structure en materiau semi-conducteur et structure en materiau semi-conducteur absorbant les infrarouges, a bande interdite variable

Country Status (6)

Country Link
US (2) US5998235A (fr)
JP (1) JPH1126781A (fr)
FR (1) FR2765400B1 (fr)
GB (1) GB2326762B (fr)
IL (1) IL125108A (fr)
NO (1) NO982962L (fr)

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JP4211153B2 (ja) * 1999-09-17 2009-01-21 ソニー株式会社 記録装置および方法
US6429103B1 (en) * 2000-04-13 2002-08-06 Motorola, Inc. MOCVD-grown emode HIGFET buffer
DE10149265A1 (de) * 2001-10-05 2003-04-17 Giesecke & Devrient Gmbh Gegenstand mit Sicherheitsmarkierung
US7041983B2 (en) * 2001-10-12 2006-05-09 Lockheed Martin Corporation Planar geometry buried junction infrared detector and focal plane array
EP1588406B1 (fr) * 2003-01-27 2019-07-10 Taiwan Semiconductor Manufacturing Company, Ltd. Structures a semi-conducteur a homogeneite structurelle
JP2007535129A (ja) * 2003-12-01 2007-11-29 ザ レジェンツ オブ ザ ユニバーシティー オブ カリフォルニア 光起電装置用の多重帯域半導体組成物
US7518207B1 (en) * 2004-03-19 2009-04-14 The United States Of America As Represented By The Secretary Of The Navy Molecular beam epitaxy growth of ternary and quaternary metal chalcogenide films
CN100508220C (zh) * 2004-04-13 2009-07-01 中国科学院福建物质结构研究所 系列类碲镉汞红外材料及其制备方法和用途
CN1332429C (zh) * 2004-07-22 2007-08-15 中芯国际集成电路制造(上海)有限公司 除去半导体器件的焊盘区中的晶格缺陷的方法
CN1298022C (zh) * 2004-07-27 2007-01-31 中国科学院上海技术物理研究所 用于碲镉汞外延生长的数字合金复合衬底及制备方法
US7865944B1 (en) * 2004-09-10 2011-01-04 Juniper Networks, Inc. Intercepting GPRS data
US8664524B2 (en) 2008-07-17 2014-03-04 Uriel Solar, Inc. High power efficiency, large substrate, polycrystalline CdTe thin film semiconductor photovoltaic cell structures grown by molecular beam epitaxy at high deposition rate for use in solar electricity generation
FR2977372B1 (fr) * 2011-06-30 2015-12-18 Soc Fr Detecteurs Infrarouges Sofradir Procede pour la realisation d'un detecteur de rayonnement electro-magnetique et detecteur obtenu par ce procede
RU2529457C1 (ru) * 2013-07-17 2014-09-27 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Национальный исследовательский Томский государственный университет" (ТГУ) Фоточувствительная к инфракрасному излучению структура и способ ее изготовления

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US4376659A (en) * 1981-06-01 1983-03-15 Texas Instruments Incorporated Process for forming semiconductor alloys having a desired bandgap
US4343881A (en) * 1981-07-06 1982-08-10 Savin Corporation Multilayer photoconductive assembly with intermediate heterojunction
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US4779004A (en) * 1983-08-31 1988-10-18 Texas Instruments Incorporated Infrared imager
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JPH04246860A (ja) * 1991-02-01 1992-09-02 Fujitsu Ltd 光電変換装置
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JP3263964B2 (ja) * 1992-01-31 2002-03-11 富士通株式会社 半導体装置形成用結晶とその製造方法
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Also Published As

Publication number Publication date
GB2326762B (en) 2003-01-22
GB2326762A (en) 1998-12-30
FR2765400A1 (fr) 1998-12-31
GB9813545D0 (en) 1998-08-19
US6208005B1 (en) 2001-03-27
IL125108A0 (en) 1999-01-26
IL125108A (en) 2001-04-30
NO982962L (no) 1998-12-28
JPH1126781A (ja) 1999-01-29
NO982962D0 (no) 1998-06-25
US5998235A (en) 1999-12-07

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Legal Events

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TP Transmission of property

Owner name: XYLON LLC, US

Effective date: 20110907

PLFP Fee payment

Year of fee payment: 19

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Year of fee payment: 20