FR2761199B1 - Procede de realisation de deux cavites communicantes dans un substrat en materiau monocristallin par gravure chimique anisotrope - Google Patents

Procede de realisation de deux cavites communicantes dans un substrat en materiau monocristallin par gravure chimique anisotrope

Info

Publication number
FR2761199B1
FR2761199B1 FR9703475A FR9703475A FR2761199B1 FR 2761199 B1 FR2761199 B1 FR 2761199B1 FR 9703475 A FR9703475 A FR 9703475A FR 9703475 A FR9703475 A FR 9703475A FR 2761199 B1 FR2761199 B1 FR 2761199B1
Authority
FR
France
Prior art keywords
producing
substrate
single crystal
crystal material
chemical etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9703475A
Other languages
English (en)
Other versions
FR2761199A1 (fr
Inventor
Yves Fouillet
Patricia Touret
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR9703475A priority Critical patent/FR2761199B1/fr
Priority to PCT/FR1998/000562 priority patent/WO1998043465A1/fr
Publication of FR2761199A1 publication Critical patent/FR2761199A1/fr
Application granted granted Critical
Publication of FR2761199B1 publication Critical patent/FR2761199B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Micromachines (AREA)
  • Transducers For Ultrasonic Waves (AREA)
FR9703475A 1997-03-21 1997-03-21 Procede de realisation de deux cavites communicantes dans un substrat en materiau monocristallin par gravure chimique anisotrope Expired - Fee Related FR2761199B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR9703475A FR2761199B1 (fr) 1997-03-21 1997-03-21 Procede de realisation de deux cavites communicantes dans un substrat en materiau monocristallin par gravure chimique anisotrope
PCT/FR1998/000562 WO1998043465A1 (fr) 1997-03-21 1998-03-20 Procede de realisation de deux cavites communicantes dans un substrat en materiau monocristallin par gravure chimique anisotrope

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9703475A FR2761199B1 (fr) 1997-03-21 1997-03-21 Procede de realisation de deux cavites communicantes dans un substrat en materiau monocristallin par gravure chimique anisotrope

Publications (2)

Publication Number Publication Date
FR2761199A1 FR2761199A1 (fr) 1998-09-25
FR2761199B1 true FR2761199B1 (fr) 1999-04-16

Family

ID=9505048

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9703475A Expired - Fee Related FR2761199B1 (fr) 1997-03-21 1997-03-21 Procede de realisation de deux cavites communicantes dans un substrat en materiau monocristallin par gravure chimique anisotrope

Country Status (2)

Country Link
FR (1) FR2761199B1 (fr)
WO (1) WO1998043465A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2930457B1 (fr) 2008-04-24 2010-06-25 Commissariat Energie Atomique Procede de fabrication de microcanaux reconfigurables

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4639748A (en) 1985-09-30 1987-01-27 Xerox Corporation Ink jet printhead with integral ink filter
JPH01179322A (ja) * 1988-01-04 1989-07-17 Toshiba Corp パターン形成方法
EP0418423B2 (fr) * 1989-09-22 1998-12-09 Siemens Aktiengesellschaft Procédé d'attaque anisotrope de silicium
US5146435A (en) * 1989-12-04 1992-09-08 The Charles Stark Draper Laboratory, Inc. Acoustic transducer
US5006202A (en) * 1990-06-04 1991-04-09 Xerox Corporation Fabricating method for silicon devices using a two step silicon etching process
US5068006A (en) * 1990-09-04 1991-11-26 Xerox Corporation Thermal ink jet printhead with pre-diced nozzle face and method of fabrication therefor
US5295395A (en) * 1991-02-07 1994-03-22 Hocker G Benjamin Diaphragm-based-sensors
US5381386A (en) * 1993-05-19 1995-01-10 Hewlett-Packard Company Membrane hydrophone
JPH0794477A (ja) * 1993-09-22 1995-04-07 Hitachi Ltd ドライエッチング方法
FR2727648B1 (fr) 1994-12-01 1997-01-03 Commissariat Energie Atomique Procede de fabrication micromecanique de buses pour jets de liquide
FR2736303B1 (fr) * 1995-07-03 1998-08-21 Seiko Epson Corp Tete a jets d'encre et son procede de fabrication

Also Published As

Publication number Publication date
FR2761199A1 (fr) 1998-09-25
WO1998043465A1 (fr) 1998-10-01

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Legal Events

Date Code Title Description
ST Notification of lapse