FR2718154B1 - Method for depositing a dielectric and / or metal on a substrate. - Google Patents

Method for depositing a dielectric and / or metal on a substrate.

Info

Publication number
FR2718154B1
FR2718154B1 FR9403962A FR9403962A FR2718154B1 FR 2718154 B1 FR2718154 B1 FR 2718154B1 FR 9403962 A FR9403962 A FR 9403962A FR 9403962 A FR9403962 A FR 9403962A FR 2718154 B1 FR2718154 B1 FR 2718154B1
Authority
FR
France
Prior art keywords
depositing
dielectric
substrate
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9403962A
Other languages
French (fr)
Other versions
FR2718154A1 (en
Inventor
Ronan Stephan
Franck Callebert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EUROP COMPOSANTS ELECTRON
Original Assignee
EUROP COMPOSANTS ELECTRON
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EUROP COMPOSANTS ELECTRON filed Critical EUROP COMPOSANTS ELECTRON
Priority to FR9403962A priority Critical patent/FR2718154B1/en
Priority to PCT/FR1995/000427 priority patent/WO1995027293A1/en
Publication of FR2718154A1 publication Critical patent/FR2718154A1/en
Application granted granted Critical
Publication of FR2718154B1 publication Critical patent/FR2718154B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Vapour Deposition (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
FR9403962A 1994-04-05 1994-04-05 Method for depositing a dielectric and / or metal on a substrate. Expired - Fee Related FR2718154B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR9403962A FR2718154B1 (en) 1994-04-05 1994-04-05 Method for depositing a dielectric and / or metal on a substrate.
PCT/FR1995/000427 WO1995027293A1 (en) 1994-04-05 1995-04-04 Method for depositing a dielectric and/or conductive material on a substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9403962A FR2718154B1 (en) 1994-04-05 1994-04-05 Method for depositing a dielectric and / or metal on a substrate.

Publications (2)

Publication Number Publication Date
FR2718154A1 FR2718154A1 (en) 1995-10-06
FR2718154B1 true FR2718154B1 (en) 1996-04-26

Family

ID=9461734

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9403962A Expired - Fee Related FR2718154B1 (en) 1994-04-05 1994-04-05 Method for depositing a dielectric and / or metal on a substrate.

Country Status (2)

Country Link
FR (1) FR2718154B1 (en)
WO (1) WO1995027293A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AUPN363595A0 (en) * 1995-06-19 1995-07-13 Intag International Limited Fabrication of capacitors
US7129187B2 (en) * 2004-07-14 2006-10-31 Tokyo Electron Limited Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2900772C2 (en) * 1979-01-10 1984-08-30 Siemens AG, 1000 Berlin und 8000 München Process for the production of layers on a tape-shaped carrier film
US4599678A (en) * 1985-03-19 1986-07-08 Wertheimer Michael R Plasma-deposited capacitor dielectrics
FR2664294B1 (en) * 1990-07-06 1992-10-23 Plasmametal METHOD FOR METALLIZING A SURFACE.

Also Published As

Publication number Publication date
WO1995027293A1 (en) 1995-10-12
FR2718154A1 (en) 1995-10-06

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Legal Events

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