FR2694132B1 - P-channel field effect transistor with quantum well, and integrated circuit with complementary transistors. - Google Patents

P-channel field effect transistor with quantum well, and integrated circuit with complementary transistors.

Info

Publication number
FR2694132B1
FR2694132B1 FR9208985A FR9208985A FR2694132B1 FR 2694132 B1 FR2694132 B1 FR 2694132B1 FR 9208985 A FR9208985 A FR 9208985A FR 9208985 A FR9208985 A FR 9208985A FR 2694132 B1 FR2694132 B1 FR 2694132B1
Authority
FR
France
Prior art keywords
integrated circuit
field effect
effect transistor
quantum well
channel field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9208985A
Other languages
French (fr)
Other versions
FR2694132A1 (en
Inventor
Linh T Nuyen
Jean Castagne
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Picogiga SA
Original Assignee
Picogiga SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Picogiga SA filed Critical Picogiga SA
Priority to FR9208985A priority Critical patent/FR2694132B1/en
Priority to EP93904106A priority patent/EP0623244A1/en
Priority to PCT/FR1993/000061 priority patent/WO1993015523A1/en
Priority to JP5512972A priority patent/JPH07506461A/en
Publication of FR2694132A1 publication Critical patent/FR2694132A1/en
Application granted granted Critical
Publication of FR2694132B1 publication Critical patent/FR2694132B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
FR9208985A 1992-01-22 1992-07-21 P-channel field effect transistor with quantum well, and integrated circuit with complementary transistors. Expired - Fee Related FR2694132B1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR9208985A FR2694132B1 (en) 1992-07-21 1992-07-21 P-channel field effect transistor with quantum well, and integrated circuit with complementary transistors.
EP93904106A EP0623244A1 (en) 1992-01-22 1993-01-21 Quantum well p-channel field effect transistor, and integrated circuit having complementary transistors
PCT/FR1993/000061 WO1993015523A1 (en) 1992-01-22 1993-01-21 Quantum well p-channel field effect transistor, and integrated circuit having complementary transistors
JP5512972A JPH07506461A (en) 1992-01-22 1993-01-21 Integrated circuit with quantum well p-channel field effect transistor and complementary transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9208985A FR2694132B1 (en) 1992-07-21 1992-07-21 P-channel field effect transistor with quantum well, and integrated circuit with complementary transistors.

Publications (2)

Publication Number Publication Date
FR2694132A1 FR2694132A1 (en) 1994-01-28
FR2694132B1 true FR2694132B1 (en) 1994-10-14

Family

ID=9432098

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9208985A Expired - Fee Related FR2694132B1 (en) 1992-01-22 1992-07-21 P-channel field effect transistor with quantum well, and integrated circuit with complementary transistors.

Country Status (1)

Country Link
FR (1) FR2694132B1 (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2189345A (en) * 1986-04-16 1987-10-21 Philips Electronic Associated High mobility p channel semi conductor devices
FR2619250B1 (en) * 1987-08-05 1990-05-11 Thomson Hybrides Microondes DOUBLE HETEROJUNCTION HYPERFREQUENCY TRANSISTOR
US4994866A (en) * 1988-01-07 1991-02-19 Fujitsu Limited Complementary semiconductor device
JPH02202029A (en) * 1989-01-31 1990-08-10 Sony Corp Compound semiconductor device

Also Published As

Publication number Publication date
FR2694132A1 (en) 1994-01-28

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Legal Events

Date Code Title Description
ST Notification of lapse