FR2693839B1 - Procédé de réalisation d'un transistor bipolaire. - Google Patents

Procédé de réalisation d'un transistor bipolaire.

Info

Publication number
FR2693839B1
FR2693839B1 FR9208844A FR9208844A FR2693839B1 FR 2693839 B1 FR2693839 B1 FR 2693839B1 FR 9208844 A FR9208844 A FR 9208844A FR 9208844 A FR9208844 A FR 9208844A FR 2693839 B1 FR2693839 B1 FR 2693839B1
Authority
FR
France
Prior art keywords
producing
bipolar transistor
bipolar
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9208844A
Other languages
English (en)
Other versions
FR2693839A1 (fr
Inventor
Stephane Tyc
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR9208844A priority Critical patent/FR2693839B1/fr
Publication of FR2693839A1 publication Critical patent/FR2693839A1/fr
Application granted granted Critical
Publication of FR2693839B1 publication Critical patent/FR2693839B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66242—Heterojunction transistors [HBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
FR9208844A 1992-07-17 1992-07-17 Procédé de réalisation d'un transistor bipolaire. Expired - Fee Related FR2693839B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR9208844A FR2693839B1 (fr) 1992-07-17 1992-07-17 Procédé de réalisation d'un transistor bipolaire.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9208844A FR2693839B1 (fr) 1992-07-17 1992-07-17 Procédé de réalisation d'un transistor bipolaire.

Publications (2)

Publication Number Publication Date
FR2693839A1 FR2693839A1 (fr) 1994-01-21
FR2693839B1 true FR2693839B1 (fr) 1994-09-02

Family

ID=9431996

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9208844A Expired - Fee Related FR2693839B1 (fr) 1992-07-17 1992-07-17 Procédé de réalisation d'un transistor bipolaire.

Country Status (1)

Country Link
FR (1) FR2693839B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19857640A1 (de) * 1998-12-14 2000-06-15 Inst Halbleiterphysik Gmbh Bipolartransistor und Verfahren zu seiner Herstellung

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2625613B1 (fr) * 1987-12-30 1990-05-04 Labo Electronique Physique
US4983534A (en) * 1988-01-05 1991-01-08 Nec Corporation Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
FR2693839A1 (fr) 1994-01-21

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Legal Events

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