FR2693283B1 - Circuit de tension de reference avec compensation en temperature positive. - Google Patents
Circuit de tension de reference avec compensation en temperature positive.Info
- Publication number
- FR2693283B1 FR2693283B1 FR9208260A FR9208260A FR2693283B1 FR 2693283 B1 FR2693283 B1 FR 2693283B1 FR 9208260 A FR9208260 A FR 9208260A FR 9208260 A FR9208260 A FR 9208260A FR 2693283 B1 FR2693283 B1 FR 2693283B1
- Authority
- FR
- France
- Prior art keywords
- reference voltage
- voltage circuit
- temperature compensation
- positive temperature
- positive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S323/00—Electricity: power supply or regulation systems
- Y10S323/901—Starting circuits
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S323/00—Electricity: power supply or regulation systems
- Y10S323/907—Temperature compensation of semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Amplifiers (AREA)
- Control Of Electrical Variables (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/815,521 US5220273A (en) | 1992-01-02 | 1992-01-02 | Reference voltage circuit with positive temperature compensation |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2693283A1 FR2693283A1 (fr) | 1994-01-07 |
FR2693283B1 true FR2693283B1 (fr) | 1995-11-10 |
Family
ID=25218049
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9208260A Expired - Fee Related FR2693283B1 (fr) | 1992-01-02 | 1992-07-03 | Circuit de tension de reference avec compensation en temperature positive. |
Country Status (3)
Country | Link |
---|---|
US (1) | US5220273A (fr) |
DE (1) | DE4219776C2 (fr) |
FR (1) | FR2693283B1 (fr) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5373226A (en) * | 1991-11-15 | 1994-12-13 | Nec Corporation | Constant voltage circuit formed of FETs and reference voltage generating circuit to be used therefor |
US5220273A (en) * | 1992-01-02 | 1993-06-15 | Etron Technology, Inc. | Reference voltage circuit with positive temperature compensation |
EP0778509B1 (fr) * | 1995-12-06 | 2002-05-02 | International Business Machines Corporation | Générateur de courant de référence compensé en température avec des résistances à fort coéfficient de température |
US5629612A (en) * | 1996-03-12 | 1997-05-13 | Maxim Integrated Products, Inc. | Methods and apparatus for improving temperature drift of references |
US5748030A (en) * | 1996-08-19 | 1998-05-05 | Motorola, Inc. | Bias generator providing process and temperature invariant MOSFET transconductance |
WO1998032490A1 (fr) * | 1997-01-29 | 1998-07-30 | Cardiac Pacemakers, Inc. | Reference de tension compensee en courant et en temperature |
US6292050B1 (en) | 1997-01-29 | 2001-09-18 | Cardiac Pacemakers, Inc. | Current and temperature compensated voltage reference having improved power supply rejection |
EP0905710B1 (fr) * | 1997-09-30 | 2003-07-23 | STMicroelectronics S.r.l. | Régulateur de tension avec compensation de chute de tension pour circuit de programmation de cellules de mémoire non volatiles électriquement programmables |
KR100334864B1 (ko) * | 1998-06-30 | 2002-08-24 | 주식회사 하이닉스반도체 | 내부전압강하회로 |
US6321074B1 (en) * | 1999-02-18 | 2001-11-20 | Itron, Inc. | Apparatus and method for reducing oscillator frequency pulling during AM modulation |
EP1501000B1 (fr) * | 2003-07-22 | 2007-03-21 | STMicroelectronics Limited | Circuit de tension de référence |
US7443231B2 (en) * | 2006-08-09 | 2008-10-28 | Elite Semiconductor Memory Technology Inc. | Low power reference voltage circuit |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3421375A (en) * | 1965-08-31 | 1969-01-14 | Infinite Q Corp | Temperature measurement system |
US3648153A (en) * | 1970-11-04 | 1972-03-07 | Rca Corp | Reference voltage source |
US3648154A (en) * | 1970-12-10 | 1972-03-07 | Motorola Inc | Power supply start circuit and amplifier circuit |
US3701004A (en) * | 1971-05-13 | 1972-10-24 | Us Army | Circuit for generating a repeatable voltage as a function of temperature |
US4088941A (en) * | 1976-10-05 | 1978-05-09 | Rca Corporation | Voltage reference circuits |
DD203415A1 (de) * | 1981-11-17 | 1983-10-19 | Th Otto Von Guericke | Schaltungsanordnung mit fallender spannungs-temperatur-charakteristik |
JPS5922433A (ja) * | 1982-07-29 | 1984-02-04 | Toshiba Corp | 温度補償用回路 |
US4774452A (en) * | 1987-05-29 | 1988-09-27 | Ge Company | Zener referenced voltage circuit |
US4857823A (en) * | 1988-09-22 | 1989-08-15 | Ncr Corporation | Bandgap voltage reference including a process and temperature insensitive start-up circuit and power-down capability |
JPH0782404B2 (ja) * | 1989-07-11 | 1995-09-06 | 日本電気株式会社 | 基準電圧発生回路 |
US4994729A (en) * | 1990-03-23 | 1991-02-19 | Taylor Stewart S | Reference voltage circuit having low temperature coefficient suitable for use in a GaAs IC |
KR940003406B1 (ko) * | 1991-06-12 | 1994-04-21 | 삼성전자 주식회사 | 내부 전원전압 발생회로 |
US5220273A (en) * | 1992-01-02 | 1993-06-15 | Etron Technology, Inc. | Reference voltage circuit with positive temperature compensation |
-
1992
- 1992-01-02 US US07/815,521 patent/US5220273A/en not_active Expired - Lifetime
- 1992-06-17 DE DE4219776A patent/DE4219776C2/de not_active Expired - Fee Related
- 1992-07-03 FR FR9208260A patent/FR2693283B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2693283A1 (fr) | 1994-01-07 |
US5220273A (en) | 1993-06-15 |
DE4219776C2 (de) | 1995-12-14 |
DE4219776A1 (de) | 1993-12-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |