FR2668500B1 - Procede d'elaboration d'une structure microcristalline de rba2cu3oy ou r designe un lanthanide. - Google Patents

Procede d'elaboration d'une structure microcristalline de rba2cu3oy ou r designe un lanthanide.

Info

Publication number
FR2668500B1
FR2668500B1 FR9013377A FR9013377A FR2668500B1 FR 2668500 B1 FR2668500 B1 FR 2668500B1 FR 9013377 A FR9013377 A FR 9013377A FR 9013377 A FR9013377 A FR 9013377A FR 2668500 B1 FR2668500 B1 FR 2668500B1
Authority
FR
France
Prior art keywords
rba2cu3oy
lanthanide
designates
preparation
microcrystalline structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9013377A
Other languages
English (en)
Other versions
FR2668500A1 (fr
Inventor
Pellerin Nadia
Odier Philippe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Original Assignee
Alcatel Alsthom Compagnie Generale dElectricite
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel Alsthom Compagnie Generale dElectricite filed Critical Alcatel Alsthom Compagnie Generale dElectricite
Priority to FR9013377A priority Critical patent/FR2668500B1/fr
Priority to DE4135520A priority patent/DE4135520A1/de
Priority to JP3283140A priority patent/JPH04300207A/ja
Publication of FR2668500A1 publication Critical patent/FR2668500A1/fr
Application granted granted Critical
Publication of FR2668500B1 publication Critical patent/FR2668500B1/fr
Priority to US08/179,817 priority patent/US5432143A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/45—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides
    • C04B35/4504—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides containing rare earth oxides
    • C04B35/4508—Type 1-2-3
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/653—Processes involving a melting step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/729—Growing single crystal, e.g. epitaxy, bulk
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/733—Rapid solidification, e.g. quenching, gas-atomizing, melt-spinning, roller-quenching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/775—High tc, above 30 k, superconducting material
    • Y10S505/776—Containing transition metal oxide with rare earth or alkaline earth
    • Y10S505/777—Lanthanum, e.g. La2CuO4
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/775—High tc, above 30 k, superconducting material
    • Y10S505/776—Containing transition metal oxide with rare earth or alkaline earth
    • Y10S505/777—Lanthanum, e.g. La2CuO4
    • Y10S505/778—Alkaline earth, i.e. Ca, Sr, Ba, Ra
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/775—High tc, above 30 k, superconducting material
    • Y10S505/776—Containing transition metal oxide with rare earth or alkaline earth
    • Y10S505/779—Other rare earth, i.e. Sc,Y,Ce,Pr,Nd,Pm,Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm,Yb,Lu and alkaline earth, i.e. Ca,Sr,Ba,Ra
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/775—High tc, above 30 k, superconducting material
    • Y10S505/776—Containing transition metal oxide with rare earth or alkaline earth
    • Y10S505/779—Other rare earth, i.e. Sc,Y,Ce,Pr,Nd,Pm,Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm,Yb,Lu and alkaline earth, i.e. Ca,Sr,Ba,Ra
    • Y10S505/78—Yttrium and barium-, e.g. YBa2Cu307

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
FR9013377A 1990-10-29 1990-10-29 Procede d'elaboration d'une structure microcristalline de rba2cu3oy ou r designe un lanthanide. Expired - Lifetime FR2668500B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR9013377A FR2668500B1 (fr) 1990-10-29 1990-10-29 Procede d'elaboration d'une structure microcristalline de rba2cu3oy ou r designe un lanthanide.
DE4135520A DE4135520A1 (de) 1990-10-29 1991-10-28 Verfahren zur bildung einer mikrokristallinen struktur von rba(pfeil abwaerts)2(pfeil abwaerts)cu(pfeil abwaerts)3(pfeil abwaerts)o(pfeil abwaerts)y(pfeil abwaerts), in der r ein lanthanid ist
JP3283140A JPH04300207A (ja) 1990-10-29 1991-10-29 Ｒがランタニドを表す式ＲＢａ▲２▼Ｃｕ▲３▼Ｏ▲ｙ▼で示される微晶質構造体の製造方法
US08/179,817 US5432143A (en) 1990-10-29 1994-01-11 Method of producing an RBa2 Cu3 Oy microcrystalline structure in which R denotes a lanthanide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9013377A FR2668500B1 (fr) 1990-10-29 1990-10-29 Procede d'elaboration d'une structure microcristalline de rba2cu3oy ou r designe un lanthanide.

Publications (2)

Publication Number Publication Date
FR2668500A1 FR2668500A1 (fr) 1992-04-30
FR2668500B1 true FR2668500B1 (fr) 1992-12-24

Family

ID=9401652

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9013377A Expired - Lifetime FR2668500B1 (fr) 1990-10-29 1990-10-29 Procede d'elaboration d'une structure microcristalline de rba2cu3oy ou r designe un lanthanide.

Country Status (4)

Country Link
US (1) US5432143A (fr)
JP (1) JPH04300207A (fr)
DE (1) DE4135520A1 (fr)
FR (1) FR2668500B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4420322C2 (de) * 1994-06-13 1997-02-27 Dresden Ev Inst Festkoerper YBa¶2¶Cu¶3¶O¶X¶-Hochtemperatur-Supraleiter und Verfahren zu dessen Herstellung
US5591698A (en) * 1994-12-29 1997-01-07 University Of Hawaii Low temperature (T lower than 950° C.) preparation of melt texture YBCO superconductors

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU598692B2 (en) * 1987-08-21 1990-06-28 Furukawa Electric Co. Ltd., The Method of manufacturing superconductive products
US4857504A (en) * 1987-08-25 1989-08-15 University Of Arkansas Melt-produced high temperature rare earth barium copper oxide superconductor and processes for making same
JP2707499B2 (ja) * 1987-11-26 1998-01-28 住友電気工業株式会社 酸化物超電導体の製造方法
JP2822451B2 (ja) * 1988-06-02 1998-11-11 住友電気工業株式会社 超電導体の製造方法
EP0349444A3 (fr) * 1988-06-20 1991-04-10 EASTMAN KODAK COMPANY (a New Jersey corporation) Couches minces supraconductrices à haute Tc en Y-Ba-Cu-O
EP0356352A3 (fr) * 1988-08-25 1990-04-18 EASTMAN KODAK COMPANY (a New Jersey corporation) Articles conducteurs riches en Yttrium et leurs procédés de préparation
JPH02217352A (ja) * 1989-02-17 1990-08-30 Furukawa Electric Co Ltd:The 酸化物超電導導体の製造方法
US5079220A (en) * 1989-05-25 1992-01-07 The United States Of America As Represented By The Secretary Of The Navy Process for single crystal growth of high Tc superconductors

Also Published As

Publication number Publication date
DE4135520A1 (de) 1992-04-30
JPH04300207A (ja) 1992-10-23
US5432143A (en) 1995-07-11
FR2668500A1 (fr) 1992-04-30

Similar Documents

Publication Publication Date Title
MA22668A1 (fr) Procede de preparation d'oxamides .
LU91293I2 (fr) Maropitant ou un sel pharmaceutiquement acceptabled'un tel composé, y compris le sel de monohydrate de citrate. cerenia
FR2652498B1 (fr) Ensemble modulaire pour prothese de l'epaule.
MA23091A1 (fr) Procede de preparation d'agents antiparasitaires .
MA21962A1 (fr) Procede pour la preparation d'inhibiteurs de proteass retrovirales .
FR2689887B1 (fr) Procede de preparation d'un derive de biphenyle.
MA22443A1 (fr) Procede de preparation d'une composition pharmaceutique .
FR2668795B1 (fr) Methode pour favoriser la production d'effluents d'une zone de production.
FR2693129B1 (fr) Outillage pour le traitement électrochimique de la surface interne d'un tube.
FR2596442B1 (fr) Console pignon pour echafaudage ou analogue
FR2708266B1 (fr) Procédé de préparation d'alcanesulfonamides.
FR2668500B1 (fr) Procede d'elaboration d'une structure microcristalline de rba2cu3oy ou r designe un lanthanide.
FR2707289B1 (fr) Procédé de préparation d'un composé hydroxylé d'amine secondaire ou tertiaire.
FR2635550B1 (fr) Procede de surelevation d'immeubles
MA21657A1 (fr) Procede de preparation de precurseurs des 3-acyl-2- oxindole-1- carboxamides auto-inflammatoires .
FR2688426B1 (fr) Procede de preparation d'une surface pour l'accrochage d'un revetement.
FR2659641B1 (fr) Procede de preparation d'un titanate de cation divalent ou trivalent.
FR2716203B1 (fr) Procédé de préparation de violanthrones ou d'isoviolanthrones chlorées.
FR2635146B1 (fr) Procede pour ameliorer la rentabilite d'un systeme de surpression ou analogue
FR2661203B3 (fr) Piece de reglage pour puits d'eau de surface ou puits d'acces.
FR2719580B1 (fr) Procédé de préparation d'octadiénols.
FR2605318B1 (fr) Procede de preparation d'azetidinones.
FR2668707B1 (fr) Procede de preparation d'une composition pharmaceutique.
FR2646523B1 (fr) Procede d'harmonisation des axes de detecteurs opto-electroniques
FR2712594B1 (fr) Procédé de préparation de l'oenotheine B à partir d'Epilobium Parviflorum.

Legal Events

Date Code Title Description
ST Notification of lapse
ST Notification of lapse