FR2663043B1 - METHOD FOR DEPOSITING THIN FILMS OF REFRACTORY METALS. - Google Patents
METHOD FOR DEPOSITING THIN FILMS OF REFRACTORY METALS.Info
- Publication number
- FR2663043B1 FR2663043B1 FR9007290A FR9007290A FR2663043B1 FR 2663043 B1 FR2663043 B1 FR 2663043B1 FR 9007290 A FR9007290 A FR 9007290A FR 9007290 A FR9007290 A FR 9007290A FR 2663043 B1 FR2663043 B1 FR 2663043B1
- Authority
- FR
- France
- Prior art keywords
- thin films
- refractory metals
- depositing thin
- depositing
- refractory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9007290A FR2663043B1 (en) | 1990-06-12 | 1990-06-12 | METHOD FOR DEPOSITING THIN FILMS OF REFRACTORY METALS. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9007290A FR2663043B1 (en) | 1990-06-12 | 1990-06-12 | METHOD FOR DEPOSITING THIN FILMS OF REFRACTORY METALS. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2663043A1 FR2663043A1 (en) | 1991-12-13 |
FR2663043B1 true FR2663043B1 (en) | 1994-01-07 |
Family
ID=9397513
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9007290A Expired - Fee Related FR2663043B1 (en) | 1990-06-12 | 1990-06-12 | METHOD FOR DEPOSITING THIN FILMS OF REFRACTORY METALS. |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2663043B1 (en) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5989407A (en) * | 1982-11-15 | 1984-05-23 | Mitsui Toatsu Chem Inc | Formation of amorphous silicon film |
US4751101A (en) * | 1987-04-30 | 1988-06-14 | International Business Machines Corporation | Low stress tungsten films by silicon reduction of WF6 |
-
1990
- 1990-06-12 FR FR9007290A patent/FR2663043B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2663043A1 (en) | 1991-12-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |