FR2657359B1 - Systeme de remplissage de bain de fusion pour la croissance d'un film dendritique. - Google Patents

Systeme de remplissage de bain de fusion pour la croissance d'un film dendritique.

Info

Publication number
FR2657359B1
FR2657359B1 FR9100849A FR9100849A FR2657359B1 FR 2657359 B1 FR2657359 B1 FR 2657359B1 FR 9100849 A FR9100849 A FR 9100849A FR 9100849 A FR9100849 A FR 9100849A FR 2657359 B1 FR2657359 B1 FR 2657359B1
Authority
FR
France
Prior art keywords
growth
filling system
bath filling
fusing
dendritic film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9100849A
Other languages
English (en)
Other versions
FR2657359A1 (fr
Inventor
Raymond George Seidensticker
Richard J. Ravas
Bolt Hall George Van
James Paul Mchugh
Frank Lawrence Przywarty
Lynd Ray Mccormick
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of FR2657359A1 publication Critical patent/FR2657359A1/fr
Application granted granted Critical
Publication of FR2657359B1 publication Critical patent/FR2657359B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
FR9100849A 1990-01-25 1991-01-25 Systeme de remplissage de bain de fusion pour la croissance d'un film dendritique. Expired - Fee Related FR2657359B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US47000090A 1990-01-25 1990-01-25

Publications (2)

Publication Number Publication Date
FR2657359A1 FR2657359A1 (fr) 1991-07-26
FR2657359B1 true FR2657359B1 (fr) 1993-10-22

Family

ID=23865892

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9100849A Expired - Fee Related FR2657359B1 (fr) 1990-01-25 1991-01-25 Systeme de remplissage de bain de fusion pour la croissance d'un film dendritique.

Country Status (7)

Country Link
US (1) US5229082A (fr)
JP (1) JP3115335B2 (fr)
KR (1) KR0169732B1 (fr)
AU (1) AU632886B2 (fr)
FR (1) FR2657359B1 (fr)
GB (1) GB2240287B (fr)
IT (1) IT1245098B (fr)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5242667A (en) * 1991-07-26 1993-09-07 Ferrofluidics Corporation Solid pellet feeder for controlled melt replenishment in continuous crystal growing process
JP2754104B2 (ja) * 1991-10-15 1998-05-20 信越半導体株式会社 半導体単結晶引上用粒状原料供給装置
DE4328982C2 (de) * 1993-08-28 1996-02-01 Leybold Ag Verfahren zum Regeln eines Mengenstromes von Partikeln zu einem Schmelztiegel und Regelanordnung zur Durchführung des Verfahrens
TW440613B (en) * 1996-01-11 2001-06-16 Mitsubishi Material Silicon Method for pulling single crystal
JP3594155B2 (ja) * 1996-03-21 2004-11-24 信越半導体株式会社 シリコン単結晶引上げ装置における粒状原料の供給方法及び供給装置
DE19813453A1 (de) * 1998-03-26 1999-09-30 Leybold Systems Gmbh Kristall-Ziehanlage
DE19813452A1 (de) * 1998-03-26 1999-09-30 Leybold Systems Gmbh Kristall-Ziehanlage
DE19825051A1 (de) * 1998-06-04 1999-12-09 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur Herstellung eines zylinderförmigen Einkristalls und Verfahren zum Abtrennen von Halbleiterscheiben
US6402839B1 (en) 1998-08-14 2002-06-11 Ebara Solar, Inc. System for stabilizing dendritic web crystal growth
US8021483B2 (en) * 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
DE10234250B4 (de) * 2002-07-27 2008-09-25 Deutsche Solar Ag Vorrichtung sowie Verfahren zur Überwachung der Kristallisation von Silizium
WO2004097079A2 (fr) * 2003-04-24 2004-11-11 Bryan Fickett Appareil de distribution de matiere brute pour systemes de croissance de cristaux industriels
BRPI0706659A2 (pt) * 2006-01-20 2011-04-05 Bp Corp North America Inc métodos de fabricação de silìcio moldado e de célula solar, células solares, corpos e wafers de silìcio multicristalinos ordenados geometricamente continuos
US20100203350A1 (en) * 2007-07-20 2010-08-12 Bp Corporation Noth America Inc. Methods and Apparatuses for Manufacturing Cast Silicon from Seed Crystals
KR20100050510A (ko) * 2007-07-20 2010-05-13 비피 코포레이션 노쓰 아메리카 인코포레이티드 시드 결정으로부터 캐스트 실리콘을 제조하는 방법
WO2009015168A1 (fr) 2007-07-25 2009-01-29 Bp Corporation North America Inc. Procédés pour la fabrication de matériaux moulés multicristallins géométriques
US8709154B2 (en) 2007-07-25 2014-04-29 Amg Idealcast Solar Corporation Methods for manufacturing monocrystalline or near-monocrystalline cast materials
TW201012978A (en) * 2008-08-27 2010-04-01 Bp Corp North America Inc Apparatus and method of use for a casting system with independent melting and solidification
KR101690490B1 (ko) * 2010-10-21 2016-12-28 에스케이이노베이션 주식회사 탄화규소 단결정의 제조방법 및 장치
US20120137976A1 (en) * 2010-12-02 2012-06-07 Jyh-Chen Chen Hot zone device
CN102242395A (zh) * 2011-06-17 2011-11-16 常州天合光能有限公司 用于硅单晶生长的连续加料装置及设置该装置的单晶炉

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2893847A (en) * 1954-02-23 1959-07-07 Siemens Ag Apparatus for preparing rod-shaped, crystalline bodies, particularly semiconductor bodies
FR2292647A1 (fr) * 1974-11-28 1976-06-25 Air Ind Diviseur de flux pour produit pulverulent
US3960503A (en) * 1974-12-27 1976-06-01 Corning Glass Works Particulate material feeder for high temperature vacuum system
US4036595A (en) * 1975-11-06 1977-07-19 Siltec Corporation Continuous crystal growing furnace
US4248539A (en) * 1978-12-26 1981-02-03 Glocker Edwin M Material spreader
US4282184A (en) * 1979-10-09 1981-08-04 Siltec Corporation Continuous replenishment of molten semiconductor in a Czochralski-process, single-crystal-growing furnace
US4389377A (en) * 1981-07-10 1983-06-21 The United States Of America As Represented By The United States Department Of Energy Apparatus for growing a dendritic web
IN161924B (fr) * 1984-10-29 1988-02-27 Westinghouse Electric Corp
US4698120A (en) * 1984-10-29 1987-10-06 Westinghouse Electric Corp. Barrier for quartz crucible for drawing silicon dendritic web and method of use
US4861416A (en) * 1985-04-04 1989-08-29 The United States Of America As Represented By The Administrator, National Aeronautics And Space Administration Ribbon growing method and apparatus
FR2592064B1 (fr) * 1985-12-23 1988-02-12 Elf Aquitaine Dispositif pour former un bain d'un materiau semi-conducteur fondu afin d'y faire croitre un element cristallin
JPH0684277B2 (ja) * 1986-03-07 1994-10-26 日立電線株式会社 ▲ｉｉｉ▼−ｖ族化合物半導体単結晶製造方法及びその装置
IN166547B (fr) * 1986-06-27 1990-06-02 Westinghouse Electric Corp
DE3737051A1 (de) * 1987-10-31 1989-05-11 Leybold Ag Vorrichtung fuer die kontinuierliche zufuhr von schmelzgut
EP0315156B1 (fr) * 1987-11-02 1991-10-16 Mitsubishi Materials Corporation Appareillage pour la croissance de cristaux
JPH01122988A (ja) * 1987-11-06 1989-05-16 Kawasaki Steel Corp 単結晶を成長させる方法および単結晶製造装置
US4968380A (en) * 1989-05-24 1990-11-06 Mobil Solar Energy Corporation System for continuously replenishing melt

Also Published As

Publication number Publication date
KR910014541A (ko) 1991-08-31
ITMI910128A1 (it) 1991-07-26
JPH04342490A (ja) 1992-11-27
ITMI910128A0 (it) 1991-01-22
GB9100005D0 (en) 1991-02-20
IT1245098B (it) 1994-09-13
GB2240287B (en) 1993-12-01
AU632886B2 (en) 1993-01-14
FR2657359A1 (fr) 1991-07-26
GB2240287A (en) 1991-07-31
AU6850190A (en) 1991-08-01
US5229082A (en) 1993-07-20
JP3115335B2 (ja) 2000-12-04
KR0169732B1 (ko) 1999-01-15

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Legal Events

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TP Transmission of property
ST Notification of lapse