FR2652358B1 - Methode de dopage d'une couche de sulfure de zinc. - Google Patents

Methode de dopage d'une couche de sulfure de zinc.

Info

Publication number
FR2652358B1
FR2652358B1 FR9011754A FR9011754A FR2652358B1 FR 2652358 B1 FR2652358 B1 FR 2652358B1 FR 9011754 A FR9011754 A FR 9011754A FR 9011754 A FR9011754 A FR 9011754A FR 2652358 B1 FR2652358 B1 FR 2652358B1
Authority
FR
France
Prior art keywords
doping
zinc sulfide
sulfide layer
layer
zinc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9011754A
Other languages
English (en)
French (fr)
Other versions
FR2652358A1 (fr
Inventor
Hyvarinen Jaakko Antero
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EPISYSTEMS Ltd Oy
Original Assignee
EPISYSTEMS Ltd Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EPISYSTEMS Ltd Oy filed Critical EPISYSTEMS Ltd Oy
Publication of FR2652358A1 publication Critical patent/FR2652358A1/fr
Application granted granted Critical
Publication of FR2652358B1 publication Critical patent/FR2652358B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/08—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state the diffusion materials being a compound of the elements to be diffused
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02557—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Chemical Vapour Deposition (AREA)
  • Luminescent Compositions (AREA)
FR9011754A 1989-09-26 1990-09-24 Methode de dopage d'une couche de sulfure de zinc. Expired - Fee Related FR2652358B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI894534A FI83721C (fi) 1989-09-26 1989-09-26 Dopningsfoerfarande

Publications (2)

Publication Number Publication Date
FR2652358A1 FR2652358A1 (fr) 1991-03-29
FR2652358B1 true FR2652358B1 (fr) 1993-09-03

Family

ID=8529054

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9011754A Expired - Fee Related FR2652358B1 (fr) 1989-09-26 1990-09-24 Methode de dopage d'une couche de sulfure de zinc.

Country Status (6)

Country Link
JP (1) JPH05500385A (enrdf_load_stackoverflow)
DE (1) DE4091748T (enrdf_load_stackoverflow)
FI (1) FI83721C (enrdf_load_stackoverflow)
FR (1) FR2652358B1 (enrdf_load_stackoverflow)
GB (1) GB2252450B (enrdf_load_stackoverflow)
WO (1) WO1991005028A1 (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103897692A (zh) * 2014-03-31 2014-07-02 中国科学院上海光学精密机械研究所 过渡金属离子浓度渐变掺杂硫化锌或硒化锌及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS554794B2 (enrdf_load_stackoverflow) * 1973-07-31 1980-01-31
GB2047462B (en) * 1979-04-20 1983-04-20 Thomas J Method of manufacturing thin film electroluminescent devices
US4389973A (en) * 1980-03-18 1983-06-28 Oy Lohja Ab Apparatus for performing growth of compound thin films
JPS58157886A (ja) * 1982-03-16 1983-09-20 Matsushita Electric Ind Co Ltd 螢光体薄膜の製造方法
JPS6287487A (ja) * 1985-10-14 1987-04-21 Sharp Corp 不純物ド−プ単結晶形成方法

Also Published As

Publication number Publication date
GB9205180D0 (en) 1992-05-13
FI894534A0 (fi) 1989-09-26
WO1991005028A1 (en) 1991-04-18
DE4091748T (enrdf_load_stackoverflow) 1992-08-27
GB2252450B (en) 1993-01-20
FR2652358A1 (fr) 1991-03-29
FI83721B (fi) 1991-04-30
GB2252450A (en) 1992-08-05
FI83721C (fi) 1993-11-22
JPH05500385A (ja) 1993-01-28

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Legal Events

Date Code Title Description
ST Notification of lapse