FR2620270B1 - Structure d'electrode multicouche - Google Patents

Structure d'electrode multicouche

Info

Publication number
FR2620270B1
FR2620270B1 FR8811735A FR8811735A FR2620270B1 FR 2620270 B1 FR2620270 B1 FR 2620270B1 FR 8811735 A FR8811735 A FR 8811735A FR 8811735 A FR8811735 A FR 8811735A FR 2620270 B1 FR2620270 B1 FR 2620270B1
Authority
FR
France
Prior art keywords
electrode structure
layer electrode
layer
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR8811735A
Other languages
English (en)
Other versions
FR2620270A1 (fr
Inventor
Shinichi Sakamoto
Takuji Sonoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2620270A1 publication Critical patent/FR2620270A1/fr
Application granted granted Critical
Publication of FR2620270B1 publication Critical patent/FR2620270B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4827—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H01L29/475—Schottky barrier electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Wire Bonding (AREA)
FR8811735A 1987-09-08 1988-09-08 Structure d'electrode multicouche Expired - Fee Related FR2620270B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22503887A JPS6467964A (en) 1987-09-08 1987-09-08 Multilayer electrode structure

Publications (2)

Publication Number Publication Date
FR2620270A1 FR2620270A1 (fr) 1989-03-10
FR2620270B1 true FR2620270B1 (fr) 1992-02-28

Family

ID=16823077

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8811735A Expired - Fee Related FR2620270B1 (fr) 1987-09-08 1988-09-08 Structure d'electrode multicouche

Country Status (2)

Country Link
JP (1) JPS6467964A (fr)
FR (1) FR2620270B1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0460531A1 (fr) * 1990-06-07 1991-12-11 Siemens Aktiengesellschaft Métallisation de contact sur matériau semiconducteur
AU5370198A (en) * 1996-12-06 1998-06-29 Raytheon Ti Systems, Inc. Gate electrode for gaas fet
FR2914500B1 (fr) 2007-03-30 2009-11-20 Picogiga Internat Dispositif electronique a contact ohmique ameliore
CN102522325B (zh) * 2011-11-15 2015-02-11 北京时代民芯科技有限公司 一种亚微米多层金属电极的制作方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3176025D1 (en) * 1980-08-04 1987-04-23 Santa Barbara Res Center Metallic contacts to compound semiconductor devices
JPS57177565A (en) * 1981-04-24 1982-11-01 Nec Corp Multi-layer electrode

Also Published As

Publication number Publication date
JPS6467964A (en) 1989-03-14
FR2620270A1 (fr) 1989-03-10

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20080531