FR2604297B1 - SILICON DOPE DEPOSIT REACTOR - Google Patents

SILICON DOPE DEPOSIT REACTOR

Info

Publication number
FR2604297B1
FR2604297B1 FR8613303A FR8613303A FR2604297B1 FR 2604297 B1 FR2604297 B1 FR 2604297B1 FR 8613303 A FR8613303 A FR 8613303A FR 8613303 A FR8613303 A FR 8613303A FR 2604297 B1 FR2604297 B1 FR 2604297B1
Authority
FR
France
Prior art keywords
silicon dope
deposit reactor
deposit
reactor
dope
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8613303A
Other languages
French (fr)
Other versions
FR2604297A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DOEUVRE JEAN PIERRE
PORTAILLER JEAN FRANCOIS
Original Assignee
DOEUVRE JEAN PIERRE
PORTAILLER JEAN FRANCOIS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by DOEUVRE JEAN PIERRE, PORTAILLER JEAN FRANCOIS filed Critical DOEUVRE JEAN PIERRE
Priority to FR8613303A priority Critical patent/FR2604297B1/en
Publication of FR2604297A1 publication Critical patent/FR2604297A1/en
Application granted granted Critical
Publication of FR2604297B1 publication Critical patent/FR2604297B1/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
FR8613303A 1986-09-19 1986-09-19 SILICON DOPE DEPOSIT REACTOR Expired FR2604297B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8613303A FR2604297B1 (en) 1986-09-19 1986-09-19 SILICON DOPE DEPOSIT REACTOR

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8613303A FR2604297B1 (en) 1986-09-19 1986-09-19 SILICON DOPE DEPOSIT REACTOR

Publications (2)

Publication Number Publication Date
FR2604297A1 FR2604297A1 (en) 1988-03-25
FR2604297B1 true FR2604297B1 (en) 1989-03-10

Family

ID=9339208

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8613303A Expired FR2604297B1 (en) 1986-09-19 1986-09-19 SILICON DOPE DEPOSIT REACTOR

Country Status (1)

Country Link
FR (1) FR2604297B1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2650602B1 (en) * 1989-08-01 1991-10-25 Centre Nat Rech Scient METHOD FOR PRODUCING CAGES FOR THE DEPOSITION, IN A VAPOR PHASE DEPOSIT REACTOR, OF THIN FILMS ON SUBSTRATES, AND CAGES OBTAINED BY THE IMPLEMENTATION OF THIS PROCESS
JPH03185717A (en) * 1989-12-14 1991-08-13 Toshiba Corp Manufacture of diffusion-type semiconductor element

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2227640B1 (en) * 1973-04-27 1977-12-30 Radiotechnique Compelec
US4053294A (en) * 1976-05-19 1977-10-11 California Quartzware Corporation Low stress semiconductor wafer carrier and method of manufacture
JPS5927611B2 (en) * 1981-08-08 1984-07-06 富士通株式会社 Vapor phase growth method
JPS59151434A (en) * 1983-02-18 1984-08-29 Nec Kyushu Ltd Vapor growth device

Also Published As

Publication number Publication date
FR2604297A1 (en) 1988-03-25

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Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse