FR2603732A1 - LOAD COUPLING SHIFT REGISTER (CCD REGISTER) WITH A VERY SMALL FRAME BY DELETING A TRANSFER AREA - Google Patents

LOAD COUPLING SHIFT REGISTER (CCD REGISTER) WITH A VERY SMALL FRAME BY DELETING A TRANSFER AREA

Info

Publication number
FR2603732A1
FR2603732A1 FR8712289A FR8712289A FR2603732A1 FR 2603732 A1 FR2603732 A1 FR 2603732A1 FR 8712289 A FR8712289 A FR 8712289A FR 8712289 A FR8712289 A FR 8712289A FR 2603732 A1 FR2603732 A1 FR 2603732A1
Authority
FR
France
Prior art keywords
zone
register
doping
deleting
small frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR8712289A
Other languages
French (fr)
Inventor
Burghard Korneffel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WERK FERNSEHELEKTRONIK KOMB MIKR
Werk fuer Fernsehelektronik GmbH
Original Assignee
WERK FERNSEHELEKTRONIK KOMB MIKR
Werk fuer Fernsehelektronik GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WERK FERNSEHELEKTRONIK KOMB MIKR, Werk fuer Fernsehelektronik GmbH filed Critical WERK FERNSEHELEKTRONIK KOMB MIKR
Publication of FR2603732A1 publication Critical patent/FR2603732A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD

Abstract

REGISTRE A DECALAGE A ACCOUPLEMENT DE CHARGE (REGISTRE CCD) AVEC UNE TRES PETITE TRAME EN SUPPRIMANT UNE ZONE DE TRANSFERT. REGISTRE CARACTERISE EN CE QU'UN ETAGE EST CONSTITUE D'UNE PREMIERE ZONE DE MEMOIRE, D'UNE SECONDE ZONE DE MEMOIRE ET D'UNE SEULE ZONE DE TRANSFERT, TANDIS QUE POUR LE FONCTIONNEMENT LES EVOLUTIONS DE POTENTIEL SONT REALISEES PAR DES DOPAGES INTRODUITS DE FACON APPROPRIEE ET EN CE QUE DANS LA PREMIERE ZONE DE MEMOIRE, AU CAS OU CELLE-CI EST CONTROLEE PAR UNE ELECTRODE, IL EST PREVU UNE PREMIERE ZONE DE DOPAGE DU TYPE DE CONDUCTIBILITE INVERSE DE CELLE DU SUBSTRAT, PLUS PROFODEMENT UNE DEUXIEME ZONE DE DOPAGE DU TYPE DE CONDUCTIBILITE INVERSE DE CELLE DU SUBSTRAT AVEC UNE TRES FAIBLE CONCENTRATION EN DOPANT ENTRE CETTE PREMIERE ET CETTE SECONDE ZONE DE DOPAGE, UNE TROISIEME ZONE DE DOPAGE DU TYPE DE CONDUCTIBILITE DU SUBSTRAT AVEC UNE FAIBLE CONCENTRATION EN DOPANT.LOAD COUPLING OFFSET REGISTER (CCD REGISTER) WITH A VERY SMALL FRAME BY DELETING A TRANSFER ZONE. REGISTER CHARACTERIZED IN THAT A STAGE IS CONSISTED OF A FIRST MEMORY ZONE, A SECOND MEMORY ZONE AND A SINGLE TRANSFER ZONE, WHILE FOR THE OPERATION THE CHANGES IN POTENTIAL ARE ACHIEVED BY DOPING INTRODUCED FROM APPROPRIATELY AND IN THAT IN THE FIRST MEMORY ZONE, IN CASE THIS IS CONTROLLED BY AN ELECTRODE, A FIRST DOPING ZONE OF THE REVERSE CONDUCTIBILITY TYPE OF THAT OF THE SUBSTRATE IS PROVIDED, MORE DEEPLY A SECOND DOPING ZONE OF THE TYPE OF CONDUCTIBILITY REVERSE OF THAT OF THE SUBSTRATE WITH A VERY LOW DOPING CONCENTRATION BETWEEN THIS FIRST AND THIS SECOND DOPING ZONE, A THIRD DOPING ZONE OF THE TYPE OF CONDUCTIBILITY OF THE SUBSTRATE WITH A LOW DOPING CONCENTRATION.

FR8712289A 1986-09-04 1987-09-04 LOAD COUPLING SHIFT REGISTER (CCD REGISTER) WITH A VERY SMALL FRAME BY DELETING A TRANSFER AREA Withdrawn FR2603732A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DD29414486A DD253709A1 (en) 1986-09-04 1986-09-04 REGISTER WITH SMALLEST GRID

Publications (1)

Publication Number Publication Date
FR2603732A1 true FR2603732A1 (en) 1988-03-11

Family

ID=5582229

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8712289A Withdrawn FR2603732A1 (en) 1986-09-04 1987-09-04 LOAD COUPLING SHIFT REGISTER (CCD REGISTER) WITH A VERY SMALL FRAME BY DELETING A TRANSFER AREA

Country Status (4)

Country Link
JP (1) JPS63102261A (en)
DD (1) DD253709A1 (en)
DE (1) DE3727386A1 (en)
FR (1) FR2603732A1 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2257145A1 (en) * 1974-01-04 1975-08-01 Commissariat Energie Atomique
US4087832A (en) * 1976-07-02 1978-05-02 International Business Machines Corporation Two-phase charge coupled device structure
FR2368144A1 (en) * 1976-10-15 1978-05-12 Fairchild Camera Instr Co COMPACT D STRUCTURE
US4148132A (en) * 1974-11-27 1979-04-10 Trw Inc. Method of fabricating a two-phase charge coupled device
US4290187A (en) * 1973-10-12 1981-09-22 Siemens Aktiengesellschaft Method of making charge-coupled arrangement in the two-phase technique

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4290187A (en) * 1973-10-12 1981-09-22 Siemens Aktiengesellschaft Method of making charge-coupled arrangement in the two-phase technique
FR2257145A1 (en) * 1974-01-04 1975-08-01 Commissariat Energie Atomique
US4148132A (en) * 1974-11-27 1979-04-10 Trw Inc. Method of fabricating a two-phase charge coupled device
US4087832A (en) * 1976-07-02 1978-05-02 International Business Machines Corporation Two-phase charge coupled device structure
FR2368144A1 (en) * 1976-10-15 1978-05-12 Fairchild Camera Instr Co COMPACT D STRUCTURE

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, Washington, DC, 3-5 décembre 1979, pages 611-614, IEEE, New York, US; J. HYNECEK: "Virtual phase CCD technology" *

Also Published As

Publication number Publication date
DD253709A1 (en) 1988-01-27
DE3727386A1 (en) 1988-03-17
JPS63102261A (en) 1988-05-07

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Date Code Title Description
ST Notification of lapse