FR2582150B1 - Dispositif de compensation des ecarts de tension de seuil des transistors a effet de champ des circuits integres analogiques - Google Patents

Dispositif de compensation des ecarts de tension de seuil des transistors a effet de champ des circuits integres analogiques

Info

Publication number
FR2582150B1
FR2582150B1 FR8507350A FR8507350A FR2582150B1 FR 2582150 B1 FR2582150 B1 FR 2582150B1 FR 8507350 A FR8507350 A FR 8507350A FR 8507350 A FR8507350 A FR 8507350A FR 2582150 B1 FR2582150 B1 FR 2582150B1
Authority
FR
France
Prior art keywords
threshold voltage
field effect
integrated circuits
effect transistors
analog integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8507350A
Other languages
English (en)
Other versions
FR2582150A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to FR8507350A priority Critical patent/FR2582150B1/fr
Publication of FR2582150A1 publication Critical patent/FR2582150A1/fr
Application granted granted Critical
Publication of FR2582150B1 publication Critical patent/FR2582150B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003Modifications for increasing the reliability for protection
    • H03K19/00369Modifications for compensating variations of temperature, supply voltage or other physical parameters
    • H03K19/00384Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR8507350A 1985-05-15 1985-05-15 Dispositif de compensation des ecarts de tension de seuil des transistors a effet de champ des circuits integres analogiques Expired FR2582150B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8507350A FR2582150B1 (fr) 1985-05-15 1985-05-15 Dispositif de compensation des ecarts de tension de seuil des transistors a effet de champ des circuits integres analogiques

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8507350A FR2582150B1 (fr) 1985-05-15 1985-05-15 Dispositif de compensation des ecarts de tension de seuil des transistors a effet de champ des circuits integres analogiques

Publications (2)

Publication Number Publication Date
FR2582150A1 FR2582150A1 (fr) 1986-11-21
FR2582150B1 true FR2582150B1 (fr) 1987-10-23

Family

ID=9319298

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8507350A Expired FR2582150B1 (fr) 1985-05-15 1985-05-15 Dispositif de compensation des ecarts de tension de seuil des transistors a effet de champ des circuits integres analogiques

Country Status (1)

Country Link
FR (1) FR2582150B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5191279A (en) * 1990-03-15 1993-03-02 Ixys Corporation Current limiting method and apparatus
EP1143551A1 (fr) * 2000-04-05 2001-10-10 Infineon Technologies AG Circuit intégré de haute fréquence

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2617102C2 (de) * 1976-04-17 1984-05-30 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zum Abgleichen eines Halbleiterbauelementes
GB2062348B (en) * 1979-10-29 1983-08-17 Burr Brown Res Corp Compensation of thermal drift of temperature sensitive circuitry
US4412241A (en) * 1980-11-21 1983-10-25 National Semiconductor Corporation Multiple trim structure

Also Published As

Publication number Publication date
FR2582150A1 (fr) 1986-11-21

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Legal Events

Date Code Title Description
ST Notification of lapse