FR2582150B1 - Dispositif de compensation des ecarts de tension de seuil des transistors a effet de champ des circuits integres analogiques - Google Patents
Dispositif de compensation des ecarts de tension de seuil des transistors a effet de champ des circuits integres analogiquesInfo
- Publication number
- FR2582150B1 FR2582150B1 FR8507350A FR8507350A FR2582150B1 FR 2582150 B1 FR2582150 B1 FR 2582150B1 FR 8507350 A FR8507350 A FR 8507350A FR 8507350 A FR8507350 A FR 8507350A FR 2582150 B1 FR2582150 B1 FR 2582150B1
- Authority
- FR
- France
- Prior art keywords
- threshold voltage
- field effect
- integrated circuits
- effect transistors
- analog integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00369—Modifications for compensating variations of temperature, supply voltage or other physical parameters
- H03K19/00384—Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8507350A FR2582150B1 (fr) | 1985-05-15 | 1985-05-15 | Dispositif de compensation des ecarts de tension de seuil des transistors a effet de champ des circuits integres analogiques |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8507350A FR2582150B1 (fr) | 1985-05-15 | 1985-05-15 | Dispositif de compensation des ecarts de tension de seuil des transistors a effet de champ des circuits integres analogiques |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2582150A1 FR2582150A1 (fr) | 1986-11-21 |
FR2582150B1 true FR2582150B1 (fr) | 1987-10-23 |
Family
ID=9319298
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8507350A Expired FR2582150B1 (fr) | 1985-05-15 | 1985-05-15 | Dispositif de compensation des ecarts de tension de seuil des transistors a effet de champ des circuits integres analogiques |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2582150B1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5191279A (en) * | 1990-03-15 | 1993-03-02 | Ixys Corporation | Current limiting method and apparatus |
EP1143551A1 (fr) * | 2000-04-05 | 2001-10-10 | Infineon Technologies AG | Circuit intégré de haute fréquence |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2617102C2 (de) * | 1976-04-17 | 1984-05-30 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Verfahren zum Abgleichen eines Halbleiterbauelementes |
GB2062348B (en) * | 1979-10-29 | 1983-08-17 | Burr Brown Res Corp | Compensation of thermal drift of temperature sensitive circuitry |
US4412241A (en) * | 1980-11-21 | 1983-10-25 | National Semiconductor Corporation | Multiple trim structure |
-
1985
- 1985-05-15 FR FR8507350A patent/FR2582150B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2582150A1 (fr) | 1986-11-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69324871D1 (de) | Hochspannungs-MIS-Feldeffektransistor und integrierte Halbleiterschaltung | |
DK0637241T3 (da) | Synergistisk kombination af et stof med mavesyresekretionsinhiberende virkning og et syrenedbrydeligt antibiotikum | |
DE3682388D1 (de) | Feldeffekttransistor verwendender schaltkreis und spannungsregler. | |
DE3568241D1 (en) | Semiconductor device having an increased breakdown voltage | |
DE3561784D1 (en) | Polarisation circuit of a field-effect transistor | |
SG128792G (en) | Low capacitance amorphous silicon field effect transistor structure | |
GB9315798D0 (en) | Manufacture of electronic devices comprising thin-film transistors | |
FR2582150B1 (fr) | Dispositif de compensation des ecarts de tension de seuil des transistors a effet de champ des circuits integres analogiques | |
EP0523967A3 (en) | Transistor arrangement for forming basic cell of master-slice type semiconductor integrated circuit device and master-slice type semiconductor integrated circuit device | |
EP0228215A3 (en) | Field-effect transistor amplifier circuits | |
FR2553782B3 (fr) | Procede de stabilisation d'elastomeres caoutchouteux vis-a-vis de l'ozone et compositions elastomeriques stabilisees | |
FR2582406B1 (fr) | Dispositif de detection de fluctuation de tension | |
GB9325984D0 (en) | Manufacture of electronic devices comprising thin-film transistors | |
GB2222306B (en) | Field effect transistor devices | |
DE3264160D1 (en) | Isolated gate field effect transistor circuit for sensing the voltage of a knot | |
DE69330594D1 (de) | Integrierte Schaltungsanordnung für Feldeffekttransitoren | |
FR2648963B1 (fr) | Dispositif de protection d'une source de tension contre des courts-circuits | |
EP0164616A3 (en) | Field effect transistor timing signal generator circuit | |
FR2604574B1 (fr) | Amplificateur a transistors a effet de champ a constantes reparties et son alimentation de tension de polarisation | |
EP0083699A3 (fr) | Circuit de protection pour dispositifs semi-conducteurs | |
GB2241845B (en) | Supply voltage adjusting circuit of a field effect type semiconductor device | |
EP0386779A3 (en) | Mos field-effect transistor having a high breakdown voltage | |
FR2555774B1 (fr) | Circuit regulateur de la tension de polarisation du substrat d'un circuit integre a transistors a effet de champ | |
KR890023829U (ko) | 정전압용 트랜지스터 보호회로 | |
FR2604569B1 (fr) | Procede et dispositif de compensation de chute de tension instantanee |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |