FR2537777A1 - Procede et dispositif d'implantation de particules dans un solide - Google Patents

Procede et dispositif d'implantation de particules dans un solide Download PDF

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Publication number
FR2537777A1
FR2537777A1 FR8220720A FR8220720A FR2537777A1 FR 2537777 A1 FR2537777 A1 FR 2537777A1 FR 8220720 A FR8220720 A FR 8220720A FR 8220720 A FR8220720 A FR 8220720A FR 2537777 A1 FR2537777 A1 FR 2537777A1
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FR
France
Prior art keywords
particles
energy
target
gas
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8220720A
Other languages
English (en)
French (fr)
Other versions
FR2537777B1 (https=
Inventor
Michel Bruel
Alain Soubie
Philippe Spinelli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR8220720A priority Critical patent/FR2537777A1/fr
Priority to EP83402341A priority patent/EP0112238A3/fr
Priority to US06/559,439 priority patent/US4585945A/en
Priority to JP58231613A priority patent/JPS59114744A/ja
Publication of FR2537777A1 publication Critical patent/FR2537777A1/fr
Application granted granted Critical
Publication of FR2537777B1 publication Critical patent/FR2537777B1/fr
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
FR8220720A 1982-12-10 1982-12-10 Procede et dispositif d'implantation de particules dans un solide Granted FR2537777A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR8220720A FR2537777A1 (fr) 1982-12-10 1982-12-10 Procede et dispositif d'implantation de particules dans un solide
EP83402341A EP0112238A3 (fr) 1982-12-10 1983-12-05 Procédé et dispositif d'implantation de particules dans un solide
US06/559,439 US4585945A (en) 1982-12-10 1983-12-08 Process and apparatus for implanting particles in a solid
JP58231613A JPS59114744A (ja) 1982-12-10 1983-12-09 固体に粒子を打ち込む方法およびその装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8220720A FR2537777A1 (fr) 1982-12-10 1982-12-10 Procede et dispositif d'implantation de particules dans un solide

Publications (2)

Publication Number Publication Date
FR2537777A1 true FR2537777A1 (fr) 1984-06-15
FR2537777B1 FR2537777B1 (https=) 1985-03-08

Family

ID=9279958

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8220720A Granted FR2537777A1 (fr) 1982-12-10 1982-12-10 Procede et dispositif d'implantation de particules dans un solide

Country Status (4)

Country Link
US (1) US4585945A (https=)
EP (1) EP0112238A3 (https=)
JP (1) JPS59114744A (https=)
FR (1) FR2537777A1 (https=)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6790747B2 (en) 1997-05-12 2004-09-14 Silicon Genesis Corporation Method and device for controlled cleaving process
US6890838B2 (en) 1997-07-18 2005-05-10 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
US7056808B2 (en) 1999-08-10 2006-06-06 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
US7776717B2 (en) 1997-05-12 2010-08-17 Silicon Genesis Corporation Controlled process and resulting device
US7811900B2 (en) 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US7846818B2 (en) 1997-05-12 2010-12-07 Silicon Genesis Corporation Controlled process and resulting device
US8187377B2 (en) 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
US8330126B2 (en) 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4566937A (en) * 1984-10-10 1986-01-28 The United States Of America As Represented By The United States Department Of Energy Electron beam enhanced surface modification for making highly resolved structures
JPH0610348B2 (ja) * 1986-07-28 1994-02-09 三菱電機株式会社 イオン注入装置
US4828817A (en) * 1987-10-29 1989-05-09 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method for producing an atomic oxygen beam
US4804837A (en) * 1988-01-11 1989-02-14 Eaton Corporation Ion implantation surface charge control method and apparatus
JPH04112441A (ja) * 1990-08-31 1992-04-14 Toshiba Corp イオン注入装置及びそのクリーニング方法
US5149974A (en) * 1990-10-29 1992-09-22 International Business Machines Corporation Gas delivery for ion beam deposition and etching
US5206516A (en) * 1991-04-29 1993-04-27 International Business Machines Corporation Low energy, steered ion beam deposition system having high current at low pressure
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
FR2748851B1 (fr) * 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
US5851413A (en) * 1996-06-19 1998-12-22 Micrion Corporation Gas delivery systems for particle beam processing
US6291313B1 (en) 1997-05-12 2001-09-18 Silicon Genesis Corporation Method and device for controlled cleaving process
US6027988A (en) * 1997-05-28 2000-02-22 The Regents Of The University Of California Method of separating films from bulk substrates by plasma immersion ion implantation
US6329650B1 (en) * 1997-12-01 2001-12-11 Ebara Corporation Space charge neutralization of an ion beam
US6184532B1 (en) 1997-12-01 2001-02-06 Ebara Corporation Ion source
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
US6291326B1 (en) 1998-06-23 2001-09-18 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
US6221740B1 (en) 1999-08-10 2001-04-24 Silicon Genesis Corporation Substrate cleaving tool and method
US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
FR2823599B1 (fr) 2001-04-13 2004-12-17 Commissariat Energie Atomique Substrat demomtable a tenue mecanique controlee et procede de realisation
US7045878B2 (en) * 2001-05-18 2006-05-16 Reveo, Inc. Selectively bonded thin film layer and substrate layer for processing of useful devices
US6956268B2 (en) * 2001-05-18 2005-10-18 Reveo, Inc. MEMS and method of manufacturing MEMS
US7033910B2 (en) * 2001-09-12 2006-04-25 Reveo, Inc. Method of fabricating multi layer MEMS and microfluidic devices
US6875671B2 (en) * 2001-09-12 2005-04-05 Reveo, Inc. Method of fabricating vertical integrated circuits
US20090065471A1 (en) * 2003-02-10 2009-03-12 Faris Sadeg M Micro-nozzle, nano-nozzle, manufacturing methods therefor, applications therefor
US7163826B2 (en) * 2001-09-12 2007-01-16 Reveo, Inc Method of fabricating multi layer devices on buried oxide layer substrates
FR2848336B1 (fr) * 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
FR2856844B1 (fr) * 2003-06-24 2006-02-17 Commissariat Energie Atomique Circuit integre sur puce de hautes performances
FR2857953B1 (fr) 2003-07-21 2006-01-13 Commissariat Energie Atomique Structure empilee, et procede pour la fabriquer
FR2861497B1 (fr) * 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
US7354815B2 (en) * 2003-11-18 2008-04-08 Silicon Genesis Corporation Method for fabricating semiconductor devices using strained silicon bearing material
FR2889887B1 (fr) * 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
FR2891281B1 (fr) 2005-09-28 2007-12-28 Commissariat Energie Atomique Procede de fabrication d'un element en couches minces.
FR2910179B1 (fr) * 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
FR2922359B1 (fr) * 2007-10-12 2009-12-18 Commissariat Energie Atomique Procede de fabrication d'une structure micro-electronique impliquant un collage moleculaire
FR2925221B1 (fr) * 2007-12-17 2010-02-19 Commissariat Energie Atomique Procede de transfert d'une couche mince
US8329557B2 (en) 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
FR2947098A1 (fr) * 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
FR2978600B1 (fr) 2011-07-25 2014-02-07 Soitec Silicon On Insulator Procede et dispositif de fabrication de couche de materiau semi-conducteur

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1558881A (https=) * 1967-05-29 1969-02-28
US4108751A (en) * 1977-06-06 1978-08-22 King William J Ion beam implantation-sputtering

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1558881A (https=) * 1967-05-29 1969-02-28
US4108751A (en) * 1977-06-06 1978-08-22 King William J Ion beam implantation-sputtering

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NUCLEAR INSTRUMENTS AND METHODS, volume 182/183, partie 1, avril-mai 1981 (AMSTERDAM, NL) T. WADA "A new recoil implantation in Si using electron bombardment", pages 131-136 *

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7846818B2 (en) 1997-05-12 2010-12-07 Silicon Genesis Corporation Controlled process and resulting device
US7776717B2 (en) 1997-05-12 2010-08-17 Silicon Genesis Corporation Controlled process and resulting device
US6790747B2 (en) 1997-05-12 2004-09-14 Silicon Genesis Corporation Method and device for controlled cleaving process
US6890838B2 (en) 1997-07-18 2005-05-10 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
US7056808B2 (en) 1999-08-10 2006-06-06 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
US8187377B2 (en) 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
US7811900B2 (en) 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US9356181B2 (en) 2006-09-08 2016-05-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US9640711B2 (en) 2006-09-08 2017-05-02 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US11444221B2 (en) 2008-05-07 2022-09-13 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US8330126B2 (en) 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation

Also Published As

Publication number Publication date
EP0112238A2 (fr) 1984-06-27
US4585945A (en) 1986-04-29
JPS59114744A (ja) 1984-07-02
FR2537777B1 (https=) 1985-03-08
EP0112238A3 (fr) 1984-07-25

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