FR2535897B1 - - Google Patents

Info

Publication number
FR2535897B1
FR2535897B1 FR8218499A FR8218499A FR2535897B1 FR 2535897 B1 FR2535897 B1 FR 2535897B1 FR 8218499 A FR8218499 A FR 8218499A FR 8218499 A FR8218499 A FR 8218499A FR 2535897 B1 FR2535897 B1 FR 2535897B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8218499A
Other languages
French (fr)
Other versions
FR2535897A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8218499A priority Critical patent/FR2535897A1/fr
Priority to EP83402076A priority patent/EP0109321A1/fr
Priority to JP20609683A priority patent/JPS5998528A/ja
Publication of FR2535897A1 publication Critical patent/FR2535897A1/fr
Application granted granted Critical
Publication of FR2535897B1 publication Critical patent/FR2535897B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28581—Deposition of Schottky electrodes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Formation Of Insulating Films (AREA)
FR8218499A 1982-11-04 1982-11-04 Procede de passivation de la surface d'un materiau semi-conducteur et son application a la fabrication de dispositifs a semi-conducteurs Granted FR2535897A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR8218499A FR2535897A1 (fr) 1982-11-04 1982-11-04 Procede de passivation de la surface d'un materiau semi-conducteur et son application a la fabrication de dispositifs a semi-conducteurs
EP83402076A EP0109321A1 (fr) 1982-11-04 1983-10-25 Procédé de passivation de la surface d'un matériau semi-conducteur et son application à la fabrication de dispositifs à semi-conducteur
JP20609683A JPS5998528A (ja) 1982-11-04 1983-11-04 半導体材料の表面の不活性化方法およびその方法を含む半導体素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8218499A FR2535897A1 (fr) 1982-11-04 1982-11-04 Procede de passivation de la surface d'un materiau semi-conducteur et son application a la fabrication de dispositifs a semi-conducteurs

Publications (2)

Publication Number Publication Date
FR2535897A1 FR2535897A1 (fr) 1984-05-11
FR2535897B1 true FR2535897B1 (OSRAM) 1985-02-08

Family

ID=9278896

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8218499A Granted FR2535897A1 (fr) 1982-11-04 1982-11-04 Procede de passivation de la surface d'un materiau semi-conducteur et son application a la fabrication de dispositifs a semi-conducteurs

Country Status (3)

Country Link
EP (1) EP0109321A1 (OSRAM)
JP (1) JPS5998528A (OSRAM)
FR (1) FR2535897A1 (OSRAM)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100653904B1 (ko) 1998-04-24 2006-12-05 니폰샤신인사츠가부시키가이샤 터치패널장치
CN115958302B (zh) * 2022-12-30 2024-11-15 深圳铭创智能装备有限公司 一种led面板返修方法及led面板返修设备

Also Published As

Publication number Publication date
FR2535897A1 (fr) 1984-05-11
EP0109321A1 (fr) 1984-05-23
JPS5998528A (ja) 1984-06-06

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Legal Events

Date Code Title Description
ST Notification of lapse