FR2532112A1 - Procede pour faire varier en fonction du temps la trajectoire d'un faisceau de particules chargees - Google Patents
Procede pour faire varier en fonction du temps la trajectoire d'un faisceau de particules chargees Download PDFInfo
- Publication number
- FR2532112A1 FR2532112A1 FR8214204A FR8214204A FR2532112A1 FR 2532112 A1 FR2532112 A1 FR 2532112A1 FR 8214204 A FR8214204 A FR 8214204A FR 8214204 A FR8214204 A FR 8214204A FR 2532112 A1 FR2532112 A1 FR 2532112A1
- Authority
- FR
- France
- Prior art keywords
- volume
- induction
- deflection
- axis
- path
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 19
- 239000002245 particle Substances 0.000 title claims abstract description 17
- 230000006698 induction Effects 0.000 claims description 25
- 238000006073 displacement reaction Methods 0.000 claims description 3
- 229910000859 α-Fe Inorganic materials 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 3
- 101100063504 Mus musculus Dlx2 gene Proteins 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910001439 antimony ion Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009172 bursting Effects 0.000 description 1
- 244000309466 calf Species 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1472—Deflecting along given lines
- H01J37/1474—Scanning means
- H01J37/1475—Scanning means magnetic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/26—Arrangements for deflecting ray or beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Particle Accelerators (AREA)
- Electron Tubes For Measurement (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8214204A FR2532112A1 (fr) | 1982-08-17 | 1982-08-17 | Procede pour faire varier en fonction du temps la trajectoire d'un faisceau de particules chargees |
| US06/517,394 US4564763A (en) | 1982-08-17 | 1983-07-26 | Process and apparatus for varying the deflection of the path of a charged particle beam |
| EP83401633A EP0103502A1 (fr) | 1982-08-17 | 1983-08-09 | Procédé pour faire varier en fonction du temps la trajectoire d'un faisceau de particules chargées |
| JP58149516A JPS5951446A (ja) | 1982-08-17 | 1983-08-16 | 荷電粒子ビ−ムの軌道の偏向を変化させる方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8214204A FR2532112A1 (fr) | 1982-08-17 | 1982-08-17 | Procede pour faire varier en fonction du temps la trajectoire d'un faisceau de particules chargees |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2532112A1 true FR2532112A1 (fr) | 1984-02-24 |
| FR2532112B1 FR2532112B1 (OSRAM) | 1985-04-26 |
Family
ID=9276907
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8214204A Granted FR2532112A1 (fr) | 1982-08-17 | 1982-08-17 | Procede pour faire varier en fonction du temps la trajectoire d'un faisceau de particules chargees |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4564763A (OSRAM) |
| EP (1) | EP0103502A1 (OSRAM) |
| JP (1) | JPS5951446A (OSRAM) |
| FR (1) | FR2532112A1 (OSRAM) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62295347A (ja) * | 1986-04-09 | 1987-12-22 | イクリプス・イオン・テクノロジ−・インコ−ポレイテツド | イオンビ−ム高速平行走査装置 |
| US4980562A (en) * | 1986-04-09 | 1990-12-25 | Varian Associates, Inc. | Method and apparatus for high efficiency scanning in an ion implanter |
| US4745281A (en) * | 1986-08-25 | 1988-05-17 | Eclipse Ion Technology, Inc. | Ion beam fast parallel scanning having dipole magnetic lens with nonuniform field |
| NL8801208A (nl) * | 1988-05-09 | 1989-12-01 | Philips Nv | Geladen deeltjes bundel apparaat. |
| US5053627A (en) * | 1990-03-01 | 1991-10-01 | Ibis Technology Corporation | Apparatus for ion implantation |
| US5311028A (en) * | 1990-08-29 | 1994-05-10 | Nissin Electric Co., Ltd. | System and method for producing oscillating magnetic fields in working gaps useful for irradiating a surface with atomic and molecular ions |
| US6677599B2 (en) * | 2000-03-27 | 2004-01-13 | Applied Materials, Inc. | System and method for uniformly implanting a wafer with an ion beam |
| AU2001270133A1 (en) | 2000-06-22 | 2002-01-02 | Proteros, Llc | Ion implantation uniformity correction using beam current control |
| JP4987554B2 (ja) * | 2007-04-26 | 2012-07-25 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
| FR2978600B1 (fr) | 2011-07-25 | 2014-02-07 | Soitec Silicon On Insulator | Procede et dispositif de fabrication de couche de materiau semi-conducteur |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0002990A1 (fr) * | 1977-12-23 | 1979-07-11 | ANVAR Agence Nationale de Valorisation de la Recherche | Implanteur d'ions à fort courant comprenant des plaques de déflexion électrostatique et des moyens de refocalisation magnétique |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3021445A (en) * | 1959-07-24 | 1962-02-13 | Bbc Brown Boveri & Cie | Electron lens |
| FR2043973A5 (OSRAM) * | 1969-05-05 | 1971-02-19 | Thomson Csf | |
| US3671737A (en) * | 1969-05-07 | 1972-06-20 | Bell & Howell Co | Method for focusing a double focusing mass spectrometer |
| SU693474A1 (ru) * | 1976-09-27 | 1979-10-25 | Предприятие П/Я М-5174 | Магнитостатическа линза |
-
1982
- 1982-08-17 FR FR8214204A patent/FR2532112A1/fr active Granted
-
1983
- 1983-07-26 US US06/517,394 patent/US4564763A/en not_active Expired - Fee Related
- 1983-08-09 EP EP83401633A patent/EP0103502A1/fr not_active Withdrawn
- 1983-08-16 JP JP58149516A patent/JPS5951446A/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0002990A1 (fr) * | 1977-12-23 | 1979-07-11 | ANVAR Agence Nationale de Valorisation de la Recherche | Implanteur d'ions à fort courant comprenant des plaques de déflexion électrostatique et des moyens de refocalisation magnétique |
Non-Patent Citations (2)
| Title |
|---|
| IBM TECHNICAL DISCLOSURE BULLETIN, vol. 19, no. 9, février 1977 (ARMONK, N.Y., US) J.R. WINNARD: "Ion-beam scanning by magnetic means", pages 3411-3412 * |
| NUCLEAR INSTRUMENTS AND METHODS, vol. 189, no. 1, octobre 1981 (AMSTERDAM, NL) P.R. HANLEY: "Electromagnetic scanningsystems", pages 227-237 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5951446A (ja) | 1984-03-24 |
| US4564763A (en) | 1986-01-14 |
| FR2532112B1 (OSRAM) | 1985-04-26 |
| EP0103502A1 (fr) | 1984-03-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |