FR2528233B1 - - Google Patents

Info

Publication number
FR2528233B1
FR2528233B1 FR8209954A FR8209954A FR2528233B1 FR 2528233 B1 FR2528233 B1 FR 2528233B1 FR 8209954 A FR8209954 A FR 8209954A FR 8209954 A FR8209954 A FR 8209954A FR 2528233 B1 FR2528233 B1 FR 2528233B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8209954A
Other languages
French (fr)
Other versions
FR2528233A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8209954A priority Critical patent/FR2528233A1/en
Priority to DE8383401076T priority patent/DE3364513D1/en
Priority to EP83401076A priority patent/EP0096625B1/en
Priority to US06/501,189 priority patent/US4609414A/en
Publication of FR2528233A1 publication Critical patent/FR2528233A1/en
Application granted granted Critical
Publication of FR2528233B1 publication Critical patent/FR2528233B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H01L29/0817—Emitter regions of bipolar transistors of heterojunction bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
FR8209954A 1982-06-08 1982-06-08 TRANSMITTER FINGER STRUCTURE IN A SWITCHING TRANSISTOR Granted FR2528233A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR8209954A FR2528233A1 (en) 1982-06-08 1982-06-08 TRANSMITTER FINGER STRUCTURE IN A SWITCHING TRANSISTOR
DE8383401076T DE3364513D1 (en) 1982-06-08 1983-05-27 Emitter finger structure in a switching transistor and manufacturing process
EP83401076A EP0096625B1 (en) 1982-06-08 1983-05-27 Emitter finger structure in a switching transistor and manufacturing process
US06/501,189 US4609414A (en) 1982-06-08 1983-06-06 Emitter finger structure in a switching transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8209954A FR2528233A1 (en) 1982-06-08 1982-06-08 TRANSMITTER FINGER STRUCTURE IN A SWITCHING TRANSISTOR

Publications (2)

Publication Number Publication Date
FR2528233A1 FR2528233A1 (en) 1983-12-09
FR2528233B1 true FR2528233B1 (en) 1985-05-17

Family

ID=9274750

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8209954A Granted FR2528233A1 (en) 1982-06-08 1982-06-08 TRANSMITTER FINGER STRUCTURE IN A SWITCHING TRANSISTOR

Country Status (4)

Country Link
US (1) US4609414A (en)
EP (1) EP0096625B1 (en)
DE (1) DE3364513D1 (en)
FR (1) FR2528233A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2171555A (en) * 1985-02-20 1986-08-28 Philips Electronic Associated Bipolar semiconductor device with implanted recombination region
JP2775503B2 (en) * 1990-03-13 1998-07-16 三菱電機株式会社 Manufacturing method of junction gate type field effect transistor
JP5061407B2 (en) * 2001-01-31 2012-10-31 富士電機株式会社 Semiconductor device and manufacturing method thereof
US10199529B2 (en) * 2008-05-28 2019-02-05 Solar-Tectic, Llc Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3258371A (en) * 1962-02-01 1966-06-28 Semiconductor Res Found Silicon semiconductor device for high frequency, and method of its manufacture
US3728592A (en) * 1969-05-09 1973-04-17 Ibm Semiconductor structure having reduced carrier lifetime
US3943549A (en) * 1972-03-15 1976-03-09 Bbc Brown, Boveri & Company, Limited Thyristor
JPS5342234B2 (en) * 1973-02-12 1978-11-09
US4177477A (en) * 1974-03-11 1979-12-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor switching device
FR2374743A1 (en) * 1976-12-20 1978-07-13 Radiotechnique Compelec MULTI-LAYER TRANSISTOR WITH COMPOUND EMITTER
FR2374742A1 (en) * 1976-12-20 1978-07-13 Radiotechnique Compelec MULTI-LAYER TRANSISTOR FOR HIGH VOLTAGES AND ITS MANUFACTURING PROCESS
GB2026236B (en) * 1978-07-20 1983-02-02 Gen Electric Power transistor
US4345266A (en) * 1978-07-20 1982-08-17 General Electric Company Transistor having improved turn-off time and second breakdown characteristics with bi-level emitter structure
JPS5565460A (en) * 1978-11-09 1980-05-16 Ibm Method of manufacturing semiconductor device improved in current gain
FR2451106A1 (en) * 1979-03-09 1980-10-03 Thomson Csf HIGH FREQUENCY SWITCHING SEMICONDUCTOR DEVICE

Also Published As

Publication number Publication date
FR2528233A1 (en) 1983-12-09
EP0096625B1 (en) 1986-07-16
EP0096625A1 (en) 1983-12-21
DE3364513D1 (en) 1986-08-21
US4609414A (en) 1986-09-02

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