FR2527007B1 - Appareil d'epitaxie par jets moleculaires - Google Patents

Appareil d'epitaxie par jets moleculaires

Info

Publication number
FR2527007B1
FR2527007B1 FR8307423A FR8307423A FR2527007B1 FR 2527007 B1 FR2527007 B1 FR 2527007B1 FR 8307423 A FR8307423 A FR 8307423A FR 8307423 A FR8307423 A FR 8307423A FR 2527007 B1 FR2527007 B1 FR 2527007B1
Authority
FR
France
Prior art keywords
epitaxy apparatus
molecular jet
jet epitaxy
molecular
jet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8307423A
Other languages
English (en)
Other versions
FR2527007A1 (fr
Inventor
Won-Tien Tsang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2527007A1 publication Critical patent/FR2527007A1/fr
Application granted granted Critical
Publication of FR2527007B1 publication Critical patent/FR2527007B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR8307423A 1982-05-14 1983-05-04 Appareil d'epitaxie par jets moleculaires Expired FR2527007B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/378,281 US4464342A (en) 1982-05-14 1982-05-14 Molecular beam epitaxy apparatus for handling phosphorus

Publications (2)

Publication Number Publication Date
FR2527007A1 FR2527007A1 (fr) 1983-11-18
FR2527007B1 true FR2527007B1 (fr) 1986-11-28

Family

ID=23492478

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8307423A Expired FR2527007B1 (fr) 1982-05-14 1983-05-04 Appareil d'epitaxie par jets moleculaires

Country Status (4)

Country Link
US (1) US4464342A (fr)
JP (1) JPS58204899A (fr)
FR (1) FR2527007B1 (fr)
GB (1) GB2120846B (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS605509A (ja) * 1983-06-24 1985-01-12 Hitachi Ltd 分子線エピタキシ装置
US4569829A (en) * 1983-11-10 1986-02-11 Texas Instruments Incorporated MBE Source bakeout system
DE3485738D1 (de) * 1983-11-10 1992-06-25 Texas Instruments Inc Mbe-system ohne schweissen.
GB2162207B (en) * 1984-07-26 1989-05-10 Japan Res Dev Corp Semiconductor crystal growth apparatus
US4824518A (en) * 1985-03-29 1989-04-25 Sharp Kabushiki Kaisha Method for the production of semiconductor devices
JPH0834180B2 (ja) * 1986-08-26 1996-03-29 セイコー電子工業株式会社 化合物半導体薄膜の成長方法
JP2008300806A (ja) * 2007-06-04 2008-12-11 Canon Inc 基板処理装置、露光装置及びデバイス製造方法
US20230135911A1 (en) * 2021-11-04 2023-05-04 Qorvo Us, Inc. MOLECULAR BEAM EPITAXY (MBE) REACTORS AND METHODS FOR n+GaN REGROWTH

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3213825A (en) * 1959-12-31 1965-10-26 Trw Inc Vacuum deposition apparatus
US4181544A (en) * 1976-12-30 1980-01-01 Bell Telephone Laboratories, Incorporated Molecular beam method for processing a plurality of substrates
FR2419585A1 (fr) * 1978-03-07 1979-10-05 Thomson Csf Procede d'obtention en phase gazeuse d'une couche epitaxiale de phosphure d'indium, et appareil d'application de ce procede
DE2940064A1 (de) * 1979-10-03 1981-04-16 Leybold-Heraeus GmbH, 5000 Köln Vakuumaufdampfanlage mir einer ventilkammer, einer bedampfungskammer und einer verdampferkammer
US4330360A (en) * 1980-07-21 1982-05-18 Bell Telephone Laboratories, Incorporated Molecular beam deposition technique using gaseous sources of group V elements

Also Published As

Publication number Publication date
GB8313058D0 (en) 1983-06-15
GB2120846B (en) 1985-09-25
JPS58204899A (ja) 1983-11-29
GB2120846A (en) 1983-12-07
FR2527007A1 (fr) 1983-11-18
US4464342A (en) 1984-08-07

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Legal Events

Date Code Title Description
ST Notification of lapse