FR2516704B1 - THYRISTOR WITH LOW TRIGGER CURRENCY IMMUNIZED IN RELATION TO TRIGGERING - Google Patents

THYRISTOR WITH LOW TRIGGER CURRENCY IMMUNIZED IN RELATION TO TRIGGERING

Info

Publication number
FR2516704B1
FR2516704B1 FR8121323A FR8121323A FR2516704B1 FR 2516704 B1 FR2516704 B1 FR 2516704B1 FR 8121323 A FR8121323 A FR 8121323A FR 8121323 A FR8121323 A FR 8121323A FR 2516704 B1 FR2516704 B1 FR 2516704B1
Authority
FR
France
Prior art keywords
thyristor
currency
immunized
triggering
relation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8121323A
Other languages
French (fr)
Other versions
FR2516704A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8121323A priority Critical patent/FR2516704B1/en
Publication of FR2516704A1 publication Critical patent/FR2516704A1/en
Application granted granted Critical
Publication of FR2516704B1 publication Critical patent/FR2516704B1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41716—Cathode or anode electrodes for thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
FR8121323A 1981-11-13 1981-11-13 THYRISTOR WITH LOW TRIGGER CURRENCY IMMUNIZED IN RELATION TO TRIGGERING Expired FR2516704B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8121323A FR2516704B1 (en) 1981-11-13 1981-11-13 THYRISTOR WITH LOW TRIGGER CURRENCY IMMUNIZED IN RELATION TO TRIGGERING

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8121323A FR2516704B1 (en) 1981-11-13 1981-11-13 THYRISTOR WITH LOW TRIGGER CURRENCY IMMUNIZED IN RELATION TO TRIGGERING

Publications (2)

Publication Number Publication Date
FR2516704A1 FR2516704A1 (en) 1983-05-20
FR2516704B1 true FR2516704B1 (en) 1985-09-06

Family

ID=9263989

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8121323A Expired FR2516704B1 (en) 1981-11-13 1981-11-13 THYRISTOR WITH LOW TRIGGER CURRENCY IMMUNIZED IN RELATION TO TRIGGERING

Country Status (1)

Country Link
FR (1) FR2516704B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3091021B1 (en) * 2018-12-20 2021-01-08 St Microelectronics Tours Sas Vertical thyristor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3619738A (en) * 1969-10-13 1971-11-09 Tokyo Shibaura Electric Co Semiconductor device with improved connection to control electrode region
FR2126904B1 (en) * 1970-12-07 1974-04-26 Silec Semi Conducteurs
US3795554A (en) * 1972-12-20 1974-03-05 Int Rectifier Corp Process for simultaneous diffusion of group iii-group v intermetallic compounds into semiconductor wafers
EP0035841A3 (en) * 1980-03-06 1982-05-26 Westinghouse Brake And Signal Company Limited A shorted-emitter thyristor device

Also Published As

Publication number Publication date
FR2516704A1 (en) 1983-05-20

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