FR2492171A1 - Procede pour fabriquer un dispositif detecteur de rayons infrarouges - Google Patents

Procede pour fabriquer un dispositif detecteur de rayons infrarouges Download PDF

Info

Publication number
FR2492171A1
FR2492171A1 FR8021764A FR8021764A FR2492171A1 FR 2492171 A1 FR2492171 A1 FR 2492171A1 FR 8021764 A FR8021764 A FR 8021764A FR 8021764 A FR8021764 A FR 8021764A FR 2492171 A1 FR2492171 A1 FR 2492171A1
Authority
FR
France
Prior art keywords
mercury
surface layer
type
junction
heating operation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8021764A
Other languages
English (en)
French (fr)
Other versions
FR2492171B1 (OSRAM
Inventor
Michael David Jenner
Maurice Victor Blackman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Priority to FR8021764A priority Critical patent/FR2492171A1/fr
Publication of FR2492171A1 publication Critical patent/FR2492171A1/fr
Application granted granted Critical
Publication of FR2492171B1 publication Critical patent/FR2492171B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H10P32/14—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2212—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
    • H10P32/17—

Landscapes

  • Light Receiving Elements (AREA)
FR8021764A 1980-10-10 1980-10-10 Procede pour fabriquer un dispositif detecteur de rayons infrarouges Granted FR2492171A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8021764A FR2492171A1 (fr) 1980-10-10 1980-10-10 Procede pour fabriquer un dispositif detecteur de rayons infrarouges

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8021764A FR2492171A1 (fr) 1980-10-10 1980-10-10 Procede pour fabriquer un dispositif detecteur de rayons infrarouges

Publications (2)

Publication Number Publication Date
FR2492171A1 true FR2492171A1 (fr) 1982-04-16
FR2492171B1 FR2492171B1 (OSRAM) 1982-12-10

Family

ID=9246767

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8021764A Granted FR2492171A1 (fr) 1980-10-10 1980-10-10 Procede pour fabriquer un dispositif detecteur de rayons infrarouges

Country Status (1)

Country Link
FR (1) FR2492171A1 (OSRAM)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1504497A (fr) * 1966-05-27 1967-12-08 Centre Nat Rech Scient Procédé de traitement d'alliages semi-conducteurs en tellurures de mercure et de cadmium
US3723190A (en) * 1968-10-09 1973-03-27 Honeywell Inc Process for preparing mercury cadmium telluride
FR2336804A1 (fr) * 1975-12-23 1977-07-22 Telecommunications Sa Perfectionnements apportes aux dispositifs semi-conducteurs, notamment aux detecteurs photovoltaiques comprenant un substrat a base d'un alliage cdxhg1-xte, et procede de fabrication d'un tel dispositif perfectionne
GB1568958A (en) * 1976-10-22 1980-06-11 Mullard Ltd Methods of manufacturing infra-red sensitive devices

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1504497A (fr) * 1966-05-27 1967-12-08 Centre Nat Rech Scient Procédé de traitement d'alliages semi-conducteurs en tellurures de mercure et de cadmium
GB1191171A (en) * 1966-05-27 1970-05-06 Ct Nat De La Rechurche Scient Process of Preparing a p-n Junction in Semi-Conductor Alloys of Mercury Telluride and Cadmium Telluride
US3723190A (en) * 1968-10-09 1973-03-27 Honeywell Inc Process for preparing mercury cadmium telluride
FR2336804A1 (fr) * 1975-12-23 1977-07-22 Telecommunications Sa Perfectionnements apportes aux dispositifs semi-conducteurs, notamment aux detecteurs photovoltaiques comprenant un substrat a base d'un alliage cdxhg1-xte, et procede de fabrication d'un tel dispositif perfectionne
GB1568958A (en) * 1976-10-22 1980-06-11 Mullard Ltd Methods of manufacturing infra-red sensitive devices

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/67 *

Also Published As

Publication number Publication date
FR2492171B1 (OSRAM) 1982-12-10

Similar Documents

Publication Publication Date Title
US8421074B2 (en) Semiconductor device with heterojunctions and an interdigitated structure
US4873118A (en) Oxygen glow treating of ZnO electrode for thin film silicon solar cell
JP3722326B2 (ja) 太陽電池の製造方法
US4468853A (en) Method of manufacturing a solar cell
JP2663048B2 (ja) 電界発光シリコン構造の製造方法
FR2477771A1 (fr) Procede pour la realisation d'un dispositif semiconducteur a haute tension de blocage et dispositif semiconducteur ainsi realise
FR2722612A1 (fr) Procede de fabrication d'un materiau ou dispositif photovoltaique, materiau ou dispositif ainsi obteu et photopile comprenant un tel materiau ou dispositif
FR2516701A1 (fr) Procede de foramtion de regions de silicium isolees de facon dielectrique
US4318217A (en) Method of manufacturing an infra-red detector device
EP0262030B1 (fr) Procédé de réalisation d'une prise de contact électrique sur un substrat en HgCdTe de conductivité P et application à la fabrication d'une diode N/P
EP0229574B1 (fr) Detecteur photovoltaique en HgCdTe a heterojonction et son procédé de fabrication
WO2022013165A1 (fr) Fabrication de cellules solaires
FR2974240A1 (fr) Capteur eclaire par la face arriere a isolement par jonction
EP1618611B1 (fr) Procede de realisation d un dispositif semi-conducteur a met allisations auto-alignees.
EP0144264A1 (fr) Photo-diode à l'antimoniure d'indium, et procédé de fabrication
FR3071358B1 (fr) Procede de fabrication d'une cellule photovoltaique a homojonction
EP0190243B1 (fr) Procede de fabrication d'un circuit integre de type mis
FR2492171A1 (fr) Procede pour fabriquer un dispositif detecteur de rayons infrarouges
EP3316319A1 (fr) Cellules photovoltaïques a contacts arriere et leur procede de fabrication
FR2620570A1 (fr) Procede de fabrication de dispositif semi-conducteur " bicmos "
WO2004081604A2 (fr) Imageur x a conversion directe et son procede de fabrication
FR2481005A1 (fr) Procede de fabrication de transistors a effet de champ a canal court
FR2499316A1 (fr) Perfectionnement a la realisation d'une cellule solaire en vue, notamment, de modeler l'epaisseur de sa couche active, et cellule ainsi obtenue
EP3903341B1 (fr) Procede de fabrication d'un substrat pour un capteur d'image de type face avant
FR2552265A1 (fr) Procede de formation d'une jonction pn

Legal Events

Date Code Title Description
TP Transmission of property