FR2477775A1 - Support system for power semiconductor stack - uses column soldered at ends to two rigid plates sandwiching semiconductor stack - Google Patents

Support system for power semiconductor stack - uses column soldered at ends to two rigid plates sandwiching semiconductor stack Download PDF

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Publication number
FR2477775A1
FR2477775A1 FR8004802A FR8004802A FR2477775A1 FR 2477775 A1 FR2477775 A1 FR 2477775A1 FR 8004802 A FR8004802 A FR 8004802A FR 8004802 A FR8004802 A FR 8004802A FR 2477775 A1 FR2477775 A1 FR 2477775A1
Authority
FR
France
Prior art keywords
plates
semiconductor stack
support system
plate
rigid plates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8004802A
Other languages
French (fr)
Other versions
FR2477775B1 (en
Inventor
Michel Masselin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alsthom Atlantique SA
Original Assignee
Alsthom Atlantique SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alsthom Atlantique SA filed Critical Alsthom Atlantique SA
Priority to FR8004802A priority Critical patent/FR2477775A1/en
Publication of FR2477775A1 publication Critical patent/FR2477775A1/en
Application granted granted Critical
Publication of FR2477775B1 publication Critical patent/FR2477775B1/fr
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/44—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements the complete device being wholly immersed in a fluid other than air
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/32—Holders for supporting the complete device in operation, i.e. detachable fixtures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/112—Mixed assemblies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Conversion In General (AREA)

Abstract

The support system comprises two parallel plates joined together by a central pillar which fits through each of the plates. The pillar is soldered to each of the plates on either side and it is pref. made of the same metal as the plates e.g. stainless steel or aluminium. Pref. each of the plates has a bore into which a respective end of the column is fitted and which has a chamfered edge on the outer side of the plate with the end face of the column lying at the base of the chamfer. Two column stacks respectively comprising diodes and thyristors are pref. held between the plates one of which acts as a cover for the casing containing the refrigeration fluid.

Description

Dispositif pour le support des colonnes de semiconducteurs de puissance disposées dans une enceinte
La présente invention concerne un dispositif pour le support des colonnes de semiconducteurs de puissance disposées dans une enceinte.Device for supporting columns of power semiconductors arranged in an enclosure
The present invention relates to a device for supporting columns of power semiconductors arranged in an enclosure.

Il est connu par le brevet français n0 79 06 235 déposé le 12 mars 1979 par la Demanderesse de constituer des colonnes de diodes ou de thyristors baignant dans un hydrocarbure fluoré et contenues dans une enceinte. Ces colonnes sont enserrées au moyen de vis par deux plateaux d'extrémité lesquels sont solidaires l'un de l'autre par un tirant central soudé superficiellement à ses deux extrémités auxdits plateaux. Chacune des colonnes subit lors du serrage une charge pouvant s'élever à une tonne et demie, dans le cas des trois colonnes la traction qui s'exerce sur le tirant central est alors de quatre tonnes et demie. Cette traction importante exige au niveau du plateau, des soudures de grande longueur ou bien des supports nécessitant un grand diamètre de tirant. It is known from French patent No. 79 06 235 filed on March 12, 1979 by the Applicant to constitute columns of diodes or thyristors immersed in a fluorinated hydrocarbon and contained in an enclosure. These columns are clamped by means of screws by two end plates which are integral with one another by a central tie welded surface at its two ends to said plates. Each of the columns undergoes during tightening a load which can amount to a ton and a half, in the case of the three columns the traction which is exerted on the central tie is then of four and a half tons. This significant traction requires at the level of the plate, very long welds or else supports requiring a large diameter of tie rod.

Un grand diamètre de tirant augmente la distance entre les colonnes de semiconducteurs et entraine d'avoir un diamètre d'enceinte
J contenant l'ensemble immerge dans l'hydrocarbure fluoré plus grand, ce qui augmente le poids et l'encombrement du dispositif.A large tie diameter increases the distance between the semiconductor columns and results in an enclosure diameter
J containing the assembly immersed in the larger fluorinated hydrocarbon, which increases the weight and size of the device.

Le tirant selon la présente invention remédie à cet inconvénient. The tie according to the present invention overcomes this drawback.

Celui-ci en effet, est d'un diamètre relativement petit tout en conservant la même longueur de soudure.This in fact is of a relatively small diameter while retaining the same length of weld.

La présente invention a pour objet un dispositif pour le support des colonnes de semiconducteurs de puissance disposées dans une enceinte comprenant deux plateaux parallèles solidaires l'un de l'autre par au moins un tirant central, caractérisé en ce que ledit tirant traverse chacun des plateaux et qu'il est soudé de part et d'autre du plateau. The present invention relates to a device for supporting the columns of power semiconductors arranged in an enclosure comprising two parallel plates integral with one another by at least one central tie, characterized in that said tie passes through each of the plates and that it is welded on both sides of the plate.

Selon une particularité de l'invention, dans un orifice du plateau chanfreiné à son extrémité ledit tirant traverse ledit orifice jusqu'à la hauteur dudit chanfrein. According to a feature of the invention, in an orifice of the chamfered plate at its end, said tie rod crosses said orifice up to the height of said chamfer.

Un exemple de mise en oeuvre de la présente invention, donné à titre purement illustratif et nullement limitatif va être décrit en référence à la figure unique qui représente une vue de dessus, partiellement coupée schématique d'un montage de semiconducteurs.  An example of implementation of the present invention, given purely by way of illustration and in no way limiting, will be described with reference to the single figure which represents a plan view, partially cut schematically of a semiconductor circuit.

Comme on peut le voir sur la figure deux colonnes 1 et 2 respectivement de diodes 3, 4, 5 et de thyristors 6, 7, 8 disposés en série sont enserrées par deux plateaux d'extrémité 9 et 10 métalliques en acier inoxydable ou aluminium. Le plateau 9 sert de couvercle à l'enceinte 100 contenant le montage et le liquide de refroidissement. As can be seen in the figure, two columns 1 and 2 respectively of diodes 3, 4, 5 and thyristors 6, 7, 8 arranged in series are enclosed by two metal end plates 9 and 10 of stainless steel or aluminum. The plate 9 serves as a cover for the enclosure 100 containing the assembly and the coolant.

Le plateau 9 comporte des bornes de sortie 11 et 12 disposées dans l'axe des colonnes 1 et 2.The plate 9 has output terminals 11 and 12 arranged in the axis of the columns 1 and 2.

Le couvercle 9 et le plateau d'extrémité 10 sont solidaires l'un de l'autre par un tirant central 30 de même métal que les plateaux 9 et 10. Le moyen de serrage de chacune des colonnes 1, 2 est réalisé au moyen de vis 34 et contre écrou 42. The cover 9 and the end plate 10 are secured to each other by a central tie rod 30 of the same metal as the plates 9 and 10. The clamping means of each of the columns 1, 2 is produced by means of screw 34 and lock nut 42.

Les plateaux 9 et 10 sont percés respectivement d'un orifice 31 et 32 traversant complètement les plateaux et de même diamètre que celui du tirant central 30. The plates 9 and 10 are respectively pierced with an orifice 31 and 32 completely passing through the plates and of the same diameter as that of the central tie rod 30.

Un chanfrein tel que 33 est usiné à l'extrémité de chacun des plateaux 9, 10 afin de souder l'extrémité du tirant 30 sans dépasser la face extérieure du plateau. Des soudures 35, 36 sont obtenues par soudage à l'arc ou analogue de part et d'autre du plateau. Etant donné le perçage du plateau et la double soudure, la longueur du cordon de soudure restant constante, c'est le tirant 30 qui est d'un diamètre plus faible, ce qui autorise de réduire le diamètre de l'enceinte. A chamfer such as 33 is machined at the end of each of the plates 9, 10 in order to weld the end of the tie rod 30 without exceeding the external face of the plate. Welds 35, 36 are obtained by arc welding or the like on either side of the plate. Given the drilling of the plate and the double weld, the length of the weld bead remaining constant, it is the tie rod 30 which is of a smaller diameter, which allows the diameter of the enclosure to be reduced.

A titre d'exemple un tirant de 10 mm de diamètre avec la double soudure selon la présente invention contenu dans une enceinte de 200 min de diamètre, devrait être remplacé par un tirant de 20 mm de diamètre en cas d'une soudure unique, ce qui entraînerait un diamètre d'enceinte majoré de 10 mm soit 210 min. Le volume de l'enceinte est alors majoré de{2o05 2 soit 10%. By way of example, a 10 mm diameter tie rod with the double weld according to the present invention contained in a 200 min diameter enclosure, should be replaced by a 20 mm diameter tie rod in the event of a single weld, this which would result in an enclosure diameter increased by 10 mm or 210 min. The volume of the enclosure is then increased by {2o05 2, ie 10%.

Les applications sont du domaine des équipements électroniques des chemins de fer notamment pour les commandes des moteurs électriques.  The applications are in the field of railway electronic equipment, in particular for controlling electric motors.

Claims (2)

REVENDICATIONS 1/ Dispositif pour le support des colonnes de semiconducteurs de puissance disposées dans une enceinte, comprenant deux plateaux parallèles solidaires l'un de l'autre par au moins un tirant central, caractérisé en ce que ledit tirant (30) traverse chacun des plateaux (9, 10) et qu'il est soudé de part et d'autre du plateau (9, 10). 1 / Device for supporting the columns of power semiconductors arranged in an enclosure, comprising two parallel plates integral with one another by at least one central tie rod, characterized in that said tie rod (30) passes through each of the plates ( 9, 10) and that it is welded on either side of the plate (9, 10). 2/ Dispositif selon la revendication 1, caractérisé en ce que dans un orifice (31, 32) du plateau (9, 10) chanfreiné à son extrémité ledit tirant (30) traverse ledit orifice (31, 32) jusqu'à la hauteur dudit chanfrein (33). 2 / Device according to claim 1, characterized in that in an orifice (31, 32) of the plate (9, 10) chamfered at its end said tie (30) passes through said orifice (31, 32) to the height of said chamfer (33).
FR8004802A 1980-03-04 1980-03-04 Support system for power semiconductor stack - uses column soldered at ends to two rigid plates sandwiching semiconductor stack Granted FR2477775A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8004802A FR2477775A1 (en) 1980-03-04 1980-03-04 Support system for power semiconductor stack - uses column soldered at ends to two rigid plates sandwiching semiconductor stack

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8004802A FR2477775A1 (en) 1980-03-04 1980-03-04 Support system for power semiconductor stack - uses column soldered at ends to two rigid plates sandwiching semiconductor stack

Publications (2)

Publication Number Publication Date
FR2477775A1 true FR2477775A1 (en) 1981-09-11
FR2477775B1 FR2477775B1 (en) 1983-10-14

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ID=9239288

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FR8004802A Granted FR2477775A1 (en) 1980-03-04 1980-03-04 Support system for power semiconductor stack - uses column soldered at ends to two rigid plates sandwiching semiconductor stack

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0172554A2 (en) * 1984-08-23 1986-02-26 Kabushiki Kaisha Toshiba Enclosed thyristor valve
US5016088A (en) * 1989-11-02 1991-05-14 Institut Imeni V. I. Lenina Unit of semiconductor elements
ES2039189A2 (en) * 1991-03-13 1993-09-01 Blohm Voss Ag Rectifying

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2327642A1 (en) * 1975-10-06 1977-05-06 Alsthom Cgee Liquid cooled mount for power semiconductors - has stack of ceramic encased semiconductors immersed in liquid in finned metal casing
EP0015547A1 (en) * 1979-03-12 1980-09-17 ALSTHOM-ATLANTIQUE Société anonyme dite: Assembly of power semiconductors cooled by a cooling fluid

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2327642A1 (en) * 1975-10-06 1977-05-06 Alsthom Cgee Liquid cooled mount for power semiconductors - has stack of ceramic encased semiconductors immersed in liquid in finned metal casing
EP0015547A1 (en) * 1979-03-12 1980-09-17 ALSTHOM-ATLANTIQUE Société anonyme dite: Assembly of power semiconductors cooled by a cooling fluid

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0172554A2 (en) * 1984-08-23 1986-02-26 Kabushiki Kaisha Toshiba Enclosed thyristor valve
EP0172554A3 (en) * 1984-08-23 1987-09-23 Kabushiki Kaisha Toshiba Enclosed thyristor valve
US5016088A (en) * 1989-11-02 1991-05-14 Institut Imeni V. I. Lenina Unit of semiconductor elements
ES2039189A2 (en) * 1991-03-13 1993-09-01 Blohm Voss Ag Rectifying

Also Published As

Publication number Publication date
FR2477775B1 (en) 1983-10-14

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