FR2476915A1 - Detecteur solide e-de integre epitaxial, notamment pour telescope - Google Patents

Detecteur solide e-de integre epitaxial, notamment pour telescope Download PDF

Info

Publication number
FR2476915A1
FR2476915A1 FR8003957A FR8003957A FR2476915A1 FR 2476915 A1 FR2476915 A1 FR 2476915A1 FR 8003957 A FR8003957 A FR 8003957A FR 8003957 A FR8003957 A FR 8003957A FR 2476915 A1 FR2476915 A1 FR 2476915A1
Authority
FR
France
Prior art keywords
detector
layer
type
epitaxial
produced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8003957A
Other languages
English (en)
French (fr)
Other versions
FR2476915B3 (enExample
Inventor
Kazuro Hushimi
Chisu Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TOKYO NUCTRONICS CO Ltd
Original Assignee
TOKYO NUCTRONICS CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP12488579A priority Critical patent/JPS5648180A/ja
Priority to DE19803003058 priority patent/DE3003058A1/de
Priority to US06/117,352 priority patent/US4340899A/en
Application filed by TOKYO NUCTRONICS CO Ltd filed Critical TOKYO NUCTRONICS CO Ltd
Priority to FR8003957A priority patent/FR2476915A1/fr
Publication of FR2476915A1 publication Critical patent/FR2476915A1/fr
Application granted granted Critical
Publication of FR2476915B3 publication Critical patent/FR2476915B3/fr
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/36Measuring spectral distribution of X-rays or of nuclear radiation spectrometry
    • G01T1/38Particle discrimination and measurement of relative mass, e.g. by measurement of loss of energy with distance (dE/dx)
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/24Measuring radiation intensity with semiconductor detectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/295Surface barrier or shallow PN junction radiation detectors, e.g. surface barrier alpha-particle detectors
    • H10W90/00

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Light Receiving Elements (AREA)
  • Pressure Sensors (AREA)
FR8003957A 1979-09-27 1980-02-22 Detecteur solide e-de integre epitaxial, notamment pour telescope Granted FR2476915A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP12488579A JPS5648180A (en) 1979-09-27 1979-09-27 Semiconductor detector
DE19803003058 DE3003058A1 (de) 1980-01-29 1980-01-29 Epitaxiales integriertes e-de festkoerper-detektorteleskop
US06/117,352 US4340899A (en) 1979-09-27 1980-01-31 Epitaxial integrated E-dE solid state detector telescope
FR8003957A FR2476915A1 (fr) 1980-01-29 1980-02-22 Detecteur solide e-de integre epitaxial, notamment pour telescope

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19803003058 DE3003058A1 (de) 1980-01-29 1980-01-29 Epitaxiales integriertes e-de festkoerper-detektorteleskop
FR8003957A FR2476915A1 (fr) 1980-01-29 1980-02-22 Detecteur solide e-de integre epitaxial, notamment pour telescope

Publications (2)

Publication Number Publication Date
FR2476915A1 true FR2476915A1 (fr) 1981-08-28
FR2476915B3 FR2476915B3 (enExample) 1982-12-17

Family

ID=25783415

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8003957A Granted FR2476915A1 (fr) 1979-09-27 1980-02-22 Detecteur solide e-de integre epitaxial, notamment pour telescope

Country Status (2)

Country Link
DE (1) DE3003058A1 (enExample)
FR (1) FR2476915A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993021660A1 (en) * 1992-04-09 1993-10-28 General Electric Company Low capacitance x-ray radiation detector

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993021660A1 (en) * 1992-04-09 1993-10-28 General Electric Company Low capacitance x-ray radiation detector

Also Published As

Publication number Publication date
FR2476915B3 (enExample) 1982-12-17
DE3003058A1 (de) 1981-07-30

Similar Documents

Publication Publication Date Title
US7800040B2 (en) Method for growing a back surface contact on an imaging detector used in conjunction with back illumination
US6657194B2 (en) Multispectral monolithic infrared focal plane array detectors
EP0350351B1 (fr) Photodiode et matrice de photodiodes sur matériau II-VI et leurs procédés de fabrication
Bajaj et al. Molecular beam epitaxial HgCdTe material characteristics and device performance: reproducibility status
EP2432034A2 (fr) Détecteur bispectral multicouche à photodiodes et procédé de fabrication d'un tel détecteur
CA2070708C (en) Visible and infrared indium antimonide (insb) photodetector with non-flashing light receiving surface
EP0229574B1 (fr) Detecteur photovoltaique en HgCdTe a heterojonction et son procédé de fabrication
EP3326027A1 (fr) Filtre et detecteur optiques a nanoparticules ou microparticules resonantes
FR2974240A1 (fr) Capteur eclaire par la face arriere a isolement par jonction
FR3041815A1 (fr) Photodetecteur comprenant un empilement de couches superposees
Sulima et al. Uncooled low-voltage AlGaAsSb/InGaAsSb/GaSb avalanche photodetectors
FR2476915A1 (fr) Detecteur solide e-de integre epitaxial, notamment pour telescope
US4340899A (en) Epitaxial integrated E-dE solid state detector telescope
Singh et al. Surface passivation of mercury-cadmium-telluride infrared detectors
US10424608B1 (en) Fabrication of polycrystalline semiconductor infrared detector
GB2132017A (en) Semiconductor device array
Liu et al. Long wavelength infrared photocurrent study of Si‐SiGe heterostructures
US5187378A (en) Photodetector
Schwarz et al. Tunable infrared detector with epitaxial silicide/silicon heterostructures
Fiorito et al. Properties of Hg implanted Hg1− x Cd x Te infrared detectors
CN110896113B (zh) 红外光探测器及其制作方法
EP0142891B1 (fr) Dispositif à couplage de charges sensible au rayonnement infrarouge et procédé de réalisation d'un tel dispositif
Bandaru et al. Growth and performance of Ge: Sb blocked impurity band (BIB) detectors
US4366334A (en) Photovoltaic cell usable as a solar cell
De Lyon et al. Molecular beam epitaxial growth of HgCdTe midwave infrared multispectral detectors