FR2466516A1 - SOLVENT MIXTURE FOR THE GALVANIC DEPOSITION OF THIN LAYERS - Google Patents
SOLVENT MIXTURE FOR THE GALVANIC DEPOSITION OF THIN LAYERS Download PDFInfo
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- FR2466516A1 FR2466516A1 FR8015850A FR8015850A FR2466516A1 FR 2466516 A1 FR2466516 A1 FR 2466516A1 FR 8015850 A FR8015850 A FR 8015850A FR 8015850 A FR8015850 A FR 8015850A FR 2466516 A1 FR2466516 A1 FR 2466516A1
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- Prior art keywords
- mixture according
- silicon
- added
- glycol
- mixture
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/12—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by electrolysis
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D9/00—Electrolytic coating other than with metals
- C25D9/04—Electrolytic coating other than with metals with inorganic materials
- C25D9/08—Electrolytic coating other than with metals with inorganic materials by cathodic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
- Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
Abstract
Mélange solvant pour le dépôt galvanique de couches minces de silicium sur des corps conducteurs servant d'électrodes. Ces mélanges comprennent les composants suivants : un solvant organique polaire protonique et/ou un solvant organique polaire non protonique auquel on a mélangé un additif polaire protonique.Solvent mixture for the galvanic deposition of thin silicon layers on conductive bodies serving as electrodes. These mixtures include the following components: a proton polar organic solvent and / or a non-proton polar organic solvent with which a proton polar additive has been mixed.
Description
24665 1624665 16
La présente invention se rapporte à un mélange solvant pour le dépôt galvanique de couches minces, de 0,01 à 100 microns-d'épaisseur, d'une substance sur un corps conducteur d'électricité servant d'électrode, le mélange solvant pour le dépôt de silicium comprenant The present invention relates to a solvent mixture for the electroplating of thin layers, 0.01 to 100 microns thick, a substance on an electrically conductive body serving as an electrode, the solvent mixture for the Silicon deposition comprising
des composants halogénosilanes et/ou halogénoalkyl- halosilane and / or haloalkyl components
silanes et/ou des halogénures de silicium. silanes and / or silicon halides.
Un mélange de ce type, complété par un solvant liquide organique dipolaire et non protonique, est connu A mixture of this type, supplemented with a dipolar and non-protonic organic liquid solvent, is known
par le brevet des Etats-Unis d'Amérique n0 3 990 953. by United States Patent No. 3,990,953.
Ce mélange connu permet le dép8t de silicium également sur des surfaces importantes et à un faible prix de revient. Des grandes surfaces revêtues de silicium sont This known mixture allows the deposition of silicon also on large surfaces and at low cost. Large surfaces coated with silicon are
surtout utilisées pour des cellules solaires. mostly used for solar cells.
L'inconvénient de ce mélange connu réside dans The disadvantage of this known mixture lies in
sa sensibilité aux additions d'eau. its sensitivity to water additions.
De ce fait il est nécessaire d'éliminer par des Therefore it is necessary to eliminate by
procédés connus l'eau présente dans ces composants. known methods the water present in these components.
Il est en outre connu de déposer du silicium par décharge luminescente à partir d'une phase gazeuse (Advances in Physics 26 (1977), pages 818 à 820). Dans It is further known to deposit silicon by glow discharge from a gas phase (Advances in Physics 26 (1977), pages 818 to 820). In
la mesure o on introduit dans la phase gazeuse de l'hy- the measure where we introduce into the gaseous phase of the hy-
drogène celui-ci est déposé en même temps que le sili- this is deposited at the same time as the sili-
cium amorphe en étant lié au silicium. De ce fait les propriétés électroniques du silicium déposé subissent amorphous cium by being bonded to silicon. As a result, the electronic properties of the deposited silicon undergo
des modifications importantes et il est possible d'obte- important changes and it is possible to obtain
nir un très bon dopage du silicium au moyen de phosphore a very good doping of silicon with phosphorus
et de bore.and boron.
La présente invention a pour objet de créer un The object of the present invention is to create a
mélange solvant qui permet le dép8t galvanique de sili- solvent mixture which allows the galvanic deposition of
cium à la température ambiante et en présence d'hydrogène. at room temperature and in the presence of hydrogen.
Ces problèmes sont résolus conformément à l'in- These problems are solved in accordance with the
vention par un mélange qui est caractérisé en ce qu'il comprend en tant que composant supplémentaire un solvant organique polaire protonique et/ou un solvant organique polaire non protonique auquel on a ajouté un additif a mixture which is characterized in that it comprises as additional component a protonic polar organic solvent and / or a non-protonic polar organic solvent to which an additive has been added
polaire protonique.polar proton.
Le mélange solvant selon l'invention présente, entre autres, les avantages suivants: Lors du dépôt cathodique du silicium il se forme en même temps de l'hydrogène au niveau de la cathode en raison de la présence d'une certaine quantité de solvant organique polaire protonique. Il a été constaté que le silicium amorphe déposé contient de l'hydrogène et que cette présence de l'hydrogène crée des bonnes propriétés photovoltaiques. Le dép8t galvanique suivant l'invention crée une The solvent mixture according to the invention has, among others, the following advantages: During the cathodic deposition of silicon, hydrogen is formed at the same time as the cathode because of the presence of a certain amount of organic solvent polar proton. It has been found that deposited amorphous silicon contains hydrogen and that the presence of hydrogen creates good photovoltaic properties. The galvanic depot according to the invention creates a
bonne liaison entre la tôle de support et la couche de si- good connection between the support plate and the
licium. On obtient ainsi une bonne conductibilité élec- Licium. This gives good electrical conductivity.
trique et thermique.heat and heat.
Le dopage par rapport aux matières conductrices n Doping with respect to conductive materials n
et p peut être obtenu pendant le dépôt galvanique en ad- and p can be obtained during the galvanic deposition in ad-
ditionnant goutte à goutte du chlorure de bore (BC13) ou boric chloride (BC13) dropwise or
d'un chlorure de phosphore (PC13, 3'PC5). phosphorus chloride (PC13, 3'PC5).
On peut agir facilement sur le dépôt en modifiant We can act easily on the deposit by modifying
l'intensité du courant, en procédant à de légères varia- the intensity of the current, making slight variations
tions de température, en agissant sur la concentration of temperature, acting on the concentration
et en ajoutant des additifs.and adding additives.
Une addition d'alcane conduit à une diminution de Alkane addition leads to a decrease in
la vitesse de réaction et du dégagement d'hydrogène. the rate of reaction and the evolution of hydrogen.
On peut accroître la conductivité du mélange solvant par addition d'un sel conducteur. Toutefois celui-ci ne The conductivity of the solvent mixture can be increased by the addition of a conductive salt. However, this one
peut être mis en solution et amené à réagir qu'à condi- can be put in solution and reacted only if
tion de disposer d'une certaine quantité de solvants polaires. to have a certain amount of polar solvents.
On peut utiliser comme sels conducteurs des halp- Conductive salts can be used as
génures alcalins ou alcalino-terreux, par exemple LiCl, alkaline or alkaline earth creatures, for example LiCl,
CaF2, KC1, KBr, KI. Ces sels sont ajoutés au mélange sol- CaF2, KCl, KBr, KI. These salts are added to the soil mixture
vant en quantités de 0,1 à 2,0 % en poids. in amounts of 0.1 to 2.0% by weight.
Lorsque le mélange solvant contient des diéthers de glycols, il est avantageux d'ajouter des boranates solubles dans les éthers, en particulier le boranate de lithium. When the solvent mixture contains diethers of glycols, it is advantageous to add soluble boranates in the ethers, in particular lithium boranate.
Lorsque le mélange solvant contient des hydrocar- When the solvent mixture contains hydrocarbons
bures halogénés, des glycols ou des monoéthers de gly- halogenated bures, glycols or monoethers of gly-
cols, il est avantageux d'utiliser comme sel conducteur collars, it is advantageous to use as conductive salt
le boranate de sodium.sodium boranate.
L'addition de boranates conduit à une accélération The addition of boranates leads to an acceleration
du dépôt de silicium.silicon deposition.
On peut en outre agir sur la conductivité par une addition de tétraéthylène-glycol. Celui-ci est ajouté à It is also possible to act on the conductivity by adding tetraethylene glycol. This one is added to
une concentration de 0,01 à 10 % en volume. a concentration of 0.01 to 10% by volume.
En outre, on peut agir sur la conductivité du sol- In addition, it is possible to influence the conductivity of the soil.
vant organique par sa teneur en humidité, qui se situe its organic content by its moisture content, which is
entre 0,01 et 2,0 % en volume. Il y a également une in- between 0.01 and 2.0% by volume. There is also a
fluence favorable sur la réactivité à l'égard du dép8t de silicium. Il s'est avéré avantageux d'utiliser dans le mélange solvant, en tant qu'halogénures de silicium, SiCl4 et/ou SiBr4 et en tant qu'halogénoalkylsilanes SiC 13CH3 et/ou SiCl2(CH3)2. Il est en outre avantageux de prévoir un solvant organique halogéné, par exemple le chlorure de méthylène, fluence favorable on the reactivity with regard to the deposit of silicon. It has proved advantageous to use in the solvent mixture, as silicon halides, SiCl4 and / or SiBr4 and as haloalkylsilanes SiC 13CH3 and / or SiCl2 (CH3) 2. It is furthermore advantageous to provide a halogenated organic solvent, for example methylene chloride,
le trichloréthylène, le 1,2-dichlorobenzène, le 1-chloro- trichlorethylene, 1,2-dichlorobenzene, 1-chloro
naphtalène.naphthalene.
Il est également avantageux d'utiliser comme sol- It is also advantageous to use as sol-
vants organiques dans le mélange selon l'invention des organic compounds in the mixture according to the invention
mono- et di-éthers du glycol ou du diéthylène-glycol. mono- and di-ethers of glycol or diethylene glycol.
L'exemple qui suit illustre l'invention sans toute- The following example illustrates the invention without any
fois la limiter; dans cet exemple, les indications de time limit it; in this example, the indications of
parties et de % s'entendent en poids sauf mention contraire. parts and% are by weight unless otherwise stated.
ExempleExample
On dissout un composé silicié, de préférence SiCi, dans un solvant organique. Si ce solvant n'est pas polaire protonique, on ajoute une certaine quantité d'additif polaire, par exemple d'un alcool ROH. Cet additif a d'une part pour fonction de former et stabiliser un composé silicié polaire par hydrolyse partielle: SiCl4 + ROH - Cl3Si - OR + H@Cle A silicon compound, preferably SiCi, is dissolved in an organic solvent. If this solvent is not polar proton, we add a certain amount of polar additive, for example an alcohol ROH. This additive has on the one hand function to form and stabilize a polar silicon compound by partial hydrolysis: SiCl4 + ROH - Cl3Si - OR + H @ Cle
4 34 3
et d'autre part d'établir la conductivité pour un dép8t galvanique. On peut encore accroître la conductivité and on the other hand to establish the conductivity for a galvanic deposition. You can still increase the conductivity
par les moyens décrits plus haut.by the means described above.
Le solvant ou mélange solvant organique est intro- The solvent or organic solvent mixture is introduced
duit, avec le composé du silicium, dans le compartiment cathodique et le compartiment anodique d'un récipient de galvanisation. Les deux compartiments sont séparés par une plaque frittée poreuse qui empêche une réaction en with the silicon compound in the cathode compartment and the anode compartment of a galvanizing vessel. The two compartments are separated by a porous sintered plate which prevents a reaction in
retour de l'halogène à la cathode. return of the halogen to the cathode.
Lorsqu'on applique une tension sur les électrodes When applying a voltage on the electrodes
du récipient de galvanisation, il se produit les réac- of the galvanizing container, the reaction takes place
tions ci-après: à la cathode 2 @ +2 eG H2t Si4+ + 4 e Si ou bien, si l'on ajoute un sel conducteur, par exemple à la cathode e 0 + ee - [y] 4[KI + SiC14-) 4 KC1 + Si à l'anode 2 C1 + 2 eJ > C12 On peut utiliser comme matériaux de cathode des tôles dtacier, d'aluminium, de titane, de nickel, etc., ou des disques de graphite. Le matériau d'anode consiste 2 or +2 eG H2t Si4 + + 4 e Si or else, if a conductive salt is added, for example to the cathode e 0 + ee - [y] 4 [KI + SiC14- ) 4 KC1 + Si at the anode 2 C1 + 2 eJ> C12 Steel, aluminum, titanium, nickel, etc., or graphite discs can be used as cathode materials. The anode material consists of
normalement en graphite ou en un mélange graphite-silicium. normally made of graphite or a graphite-silicon mixture.
Lorsqu'on utilise le titane comme matériau de la t8le de cathode, on obtient une phase hydrure de titane When titanium is used as the material of the cathode plate, a titanium hydride phase is obtained.
sur laquelle la couche de silicium croit. on which the silicon layer is believed.
L'utilisation de métaux vitreux comme t8les de ca- The use of vitreous metals as bases for
thode conduit au dép8t à l'état amorphe vitreux, c'est-à- thode leads to depot in the glassy amorphous state, ie
dire au dép8t de silicium sans limites de grains. say to the deposition of silicon without grain boundaries.
Claims (13)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19792929669 DE2929669A1 (en) | 1979-07-21 | 1979-07-21 | MIXTURE OF A SOLVENT FOR THE GALVANIC DEPOSIT |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2466516A1 true FR2466516A1 (en) | 1981-04-10 |
Family
ID=6076440
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8015850A Withdrawn FR2466516A1 (en) | 1979-07-21 | 1980-07-17 | SOLVENT MIXTURE FOR THE GALVANIC DEPOSITION OF THIN LAYERS |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS5616695A (en) |
DE (1) | DE2929669A1 (en) |
FR (1) | FR2466516A1 (en) |
GB (1) | GB2055400B (en) |
NL (1) | NL8003825A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59228997A (en) * | 1983-06-08 | 1984-12-22 | Fuji Sharyo Kk | Fermentation tank |
JPH0572941U (en) * | 1992-09-24 | 1993-10-05 | 富士車輌株式会社 | Fermenter |
JP2008231516A (en) * | 2007-03-20 | 2008-10-02 | Toyota Motor Corp | Metal oxide thin film, capacitor, hydrogen separation membrane-electrolyte membrane joined body and method for manufacturing fuel cell |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3990953A (en) * | 1975-11-17 | 1976-11-09 | Battelle Development Corporation | Silicon electrodeposition |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2508803C3 (en) | 1975-02-28 | 1982-07-08 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Process for the production of plate-shaped silicon crystals with a columnar structure |
-
1979
- 1979-07-21 DE DE19792929669 patent/DE2929669A1/en not_active Withdrawn
-
1980
- 1980-07-02 NL NL8003825A patent/NL8003825A/en not_active Application Discontinuation
- 1980-07-07 JP JP9182580A patent/JPS5616695A/en active Pending
- 1980-07-17 FR FR8015850A patent/FR2466516A1/en not_active Withdrawn
- 1980-07-18 GB GB8023531A patent/GB2055400B/en not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3990953A (en) * | 1975-11-17 | 1976-11-09 | Battelle Development Corporation | Silicon electrodeposition |
Also Published As
Publication number | Publication date |
---|---|
JPS5616695A (en) | 1981-02-17 |
GB2055400B (en) | 1983-06-08 |
GB2055400A (en) | 1981-03-04 |
DE2929669A1 (en) | 1981-01-29 |
NL8003825A (en) | 1981-01-23 |
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