FR2463508B1 - - Google Patents

Info

Publication number
FR2463508B1
FR2463508B1 FR7920778A FR7920778A FR2463508B1 FR 2463508 B1 FR2463508 B1 FR 2463508B1 FR 7920778 A FR7920778 A FR 7920778A FR 7920778 A FR7920778 A FR 7920778A FR 2463508 B1 FR2463508 B1 FR 2463508B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7920778A
Other languages
French (fr)
Other versions
FR2463508A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bpifrance Financement SA
Original Assignee
Agence National de Valorisation de la Recherche ANVAR
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agence National de Valorisation de la Recherche ANVAR filed Critical Agence National de Valorisation de la Recherche ANVAR
Priority to FR7920778A priority Critical patent/FR2463508A1/fr
Publication of FR2463508A1 publication Critical patent/FR2463508A1/fr
Application granted granted Critical
Publication of FR2463508B1 publication Critical patent/FR2463508B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/16Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166Amorphous semiconductors
    • H10F77/1662Amorphous semiconductors including only Group IV materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D64/0111
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/62Electrodes ohmically coupled to a semiconductor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/206Electrodes for devices having potential barriers
    • H10F77/211Electrodes for devices having potential barriers for photovoltaic cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/548Amorphous silicon PV cells
FR7920778A 1979-08-16 1979-08-16 Procede de realisation de contacts ohmiques sur une couche active de silicium amorphe hydrogene Granted FR2463508A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7920778A FR2463508A1 (fr) 1979-08-16 1979-08-16 Procede de realisation de contacts ohmiques sur une couche active de silicium amorphe hydrogene

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7920778A FR2463508A1 (fr) 1979-08-16 1979-08-16 Procede de realisation de contacts ohmiques sur une couche active de silicium amorphe hydrogene

Publications (2)

Publication Number Publication Date
FR2463508A1 FR2463508A1 (fr) 1981-02-20
FR2463508B1 true FR2463508B1 (index.php) 1983-04-22

Family

ID=9228882

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7920778A Granted FR2463508A1 (fr) 1979-08-16 1979-08-16 Procede de realisation de contacts ohmiques sur une couche active de silicium amorphe hydrogene

Country Status (1)

Country Link
FR (1) FR2463508A1 (index.php)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59110179A (ja) * 1982-12-16 1984-06-26 Hitachi Ltd 半導体装置およびその製造法
GB8400959D0 (en) * 1984-01-13 1984-02-15 British Petroleum Co Plc Semiconductor device
US4529619A (en) * 1984-07-16 1985-07-16 Xerox Corporation Ohmic contacts for hydrogenated amorphous silicon
GB8910854D0 (en) * 1989-05-11 1989-06-28 British Petroleum Co Plc Semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1078078A (en) * 1976-03-22 1980-05-20 David E. Carlson Schottky barrier semiconductor device and method of making same

Also Published As

Publication number Publication date
FR2463508A1 (fr) 1981-02-20

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Legal Events

Date Code Title Description
ST Notification of lapse