FR2463508B1 - - Google Patents
Info
- Publication number
- FR2463508B1 FR2463508B1 FR7920778A FR7920778A FR2463508B1 FR 2463508 B1 FR2463508 B1 FR 2463508B1 FR 7920778 A FR7920778 A FR 7920778A FR 7920778 A FR7920778 A FR 7920778A FR 2463508 B1 FR2463508 B1 FR 2463508B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
- H10F77/166—Amorphous semiconductors
- H10F77/1662—Amorphous semiconductors including only Group IV materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
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- H10D64/0111—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7920778A FR2463508A1 (fr) | 1979-08-16 | 1979-08-16 | Procede de realisation de contacts ohmiques sur une couche active de silicium amorphe hydrogene |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7920778A FR2463508A1 (fr) | 1979-08-16 | 1979-08-16 | Procede de realisation de contacts ohmiques sur une couche active de silicium amorphe hydrogene |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2463508A1 FR2463508A1 (fr) | 1981-02-20 |
| FR2463508B1 true FR2463508B1 (Direct) | 1983-04-22 |
Family
ID=9228882
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7920778A Granted FR2463508A1 (fr) | 1979-08-16 | 1979-08-16 | Procede de realisation de contacts ohmiques sur une couche active de silicium amorphe hydrogene |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2463508A1 (Direct) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59110179A (ja) * | 1982-12-16 | 1984-06-26 | Hitachi Ltd | 半導体装置およびその製造法 |
| GB8400959D0 (en) * | 1984-01-13 | 1984-02-15 | British Petroleum Co Plc | Semiconductor device |
| US4529619A (en) * | 1984-07-16 | 1985-07-16 | Xerox Corporation | Ohmic contacts for hydrogenated amorphous silicon |
| GB8910854D0 (en) * | 1989-05-11 | 1989-06-28 | British Petroleum Co Plc | Semiconductor device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1078078A (en) * | 1976-03-22 | 1980-05-20 | David E. Carlson | Schottky barrier semiconductor device and method of making same |
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1979
- 1979-08-16 FR FR7920778A patent/FR2463508A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2463508A1 (fr) | 1981-02-20 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |