FR2461358B1 - - Google Patents

Info

Publication number
FR2461358B1
FR2461358B1 FR7917603A FR7917603A FR2461358B1 FR 2461358 B1 FR2461358 B1 FR 2461358B1 FR 7917603 A FR7917603 A FR 7917603A FR 7917603 A FR7917603 A FR 7917603A FR 2461358 B1 FR2461358 B1 FR 2461358B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7917603A
Other languages
French (fr)
Other versions
FR2461358A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7917603A priority Critical patent/FR2461358A1/fr
Priority to EP80400816A priority patent/EP0022383B1/fr
Priority to DE8080400816T priority patent/DE3062812D1/de
Priority to US06/165,777 priority patent/US4326330A/en
Priority to NO802032A priority patent/NO802032L/no
Publication of FR2461358A1 publication Critical patent/FR2461358A1/fr
Application granted granted Critical
Publication of FR2461358B1 publication Critical patent/FR2461358B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/139—Schottky barrier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/951—Lift-off

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
FR7917603A 1979-07-06 1979-07-06 Procede de realisation d'un transistor a effet de champ a grille auto-alignee, et transistor obtenu par ce procede Granted FR2461358A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7917603A FR2461358A1 (fr) 1979-07-06 1979-07-06 Procede de realisation d'un transistor a effet de champ a grille auto-alignee, et transistor obtenu par ce procede
EP80400816A EP0022383B1 (fr) 1979-07-06 1980-06-06 Procédé de réalisation d'un transistor à effet de champ à grille Schottky auto-alignée, et transistor obtenu par ce procédé
DE8080400816T DE3062812D1 (en) 1979-07-06 1980-06-06 Method of making a self aligned schottky gate field effect transistor and transistor obtained by this method
US06/165,777 US4326330A (en) 1979-07-06 1980-07-03 Process for producing a self-aligned grid field-effect transistor
NO802032A NO802032L (no) 1979-07-06 1980-07-04 Fremgangsmaate for fremstilling av en selvinnrettet gitter felteffekt transistor, og en transistor fremstilt ved denne fremgangsmaaten

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7917603A FR2461358A1 (fr) 1979-07-06 1979-07-06 Procede de realisation d'un transistor a effet de champ a grille auto-alignee, et transistor obtenu par ce procede

Publications (2)

Publication Number Publication Date
FR2461358A1 FR2461358A1 (fr) 1981-01-30
FR2461358B1 true FR2461358B1 (OSRAM) 1982-08-20

Family

ID=9227612

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7917603A Granted FR2461358A1 (fr) 1979-07-06 1979-07-06 Procede de realisation d'un transistor a effet de champ a grille auto-alignee, et transistor obtenu par ce procede

Country Status (5)

Country Link
US (1) US4326330A (OSRAM)
EP (1) EP0022383B1 (OSRAM)
DE (1) DE3062812D1 (OSRAM)
FR (1) FR2461358A1 (OSRAM)
NO (1) NO802032L (OSRAM)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1171402B (it) * 1981-07-20 1987-06-10 Selenia Ind Eletroniche Associ Transistor ad effeto di campo a barriera metallo-semiconduttorre conzona svuotata modificata
US4512076A (en) * 1982-12-20 1985-04-23 Raytheon Company Semiconductor device fabrication process
US4486946A (en) * 1983-07-12 1984-12-11 Control Data Corporation Method for using titanium-tungsten alloy as a barrier metal in silicon semiconductor processing
FR2558647B1 (fr) * 1984-01-23 1986-05-09 Labo Electronique Physique Transistor a effet de champ de type schottky pour applications hyperfrequences et procede de realisation permettant d'obtenir un tel transistor
US4888626A (en) * 1985-03-07 1989-12-19 The United States Of America As Represented By The Secretary Of The Navy Self-aligned gaas fet with low 1/f noise
DE3609274A1 (de) * 1986-03-19 1987-09-24 Siemens Ag Verfahren zur herstellung eines selbstjustiert positionierten metallkontaktes
US5411914A (en) * 1988-02-19 1995-05-02 Massachusetts Institute Of Technology III-V based integrated circuits having low temperature growth buffer or passivation layers
US4935384A (en) * 1988-12-14 1990-06-19 The United States Of America As Represented By The United States Department Of Energy Method of passivating semiconductor surfaces
US4996165A (en) * 1989-04-21 1991-02-26 Rockwell International Corporation Self-aligned dielectric assisted planarization process
US5688415A (en) * 1995-05-30 1997-11-18 Ipec Precision, Inc. Localized plasma assisted chemical etching through a mask
US6811853B1 (en) 2000-03-06 2004-11-02 Shipley Company, L.L.C. Single mask lithographic process for patterning multiple types of surface features
US6627096B2 (en) 2000-05-02 2003-09-30 Shipley Company, L.L.C. Single mask technique for making positive and negative micromachined features on a substrate
US6554418B2 (en) 2001-01-26 2003-04-29 Eastman Kodak Company Ink jet printing method

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1384028A (en) * 1972-08-21 1974-02-12 Hughes Aircraft Co Method of making a semiconductor device
US3994758A (en) * 1973-03-19 1976-11-30 Nippon Electric Company, Ltd. Method of manufacturing a semiconductor device having closely spaced electrodes by perpendicular projection
US3912546A (en) * 1974-12-06 1975-10-14 Hughes Aircraft Co Enhancement mode, Schottky-barrier gate gallium arsenide field effect transistor
FR2294544A1 (fr) * 1974-12-13 1976-07-09 Thomson Csf Procede de fabrication, en circuit integre, de transistors a effet de champ destines a fonctionner en tres haute frequence, et structure ou dispositifs obtenus
US4040168A (en) * 1975-11-24 1977-08-09 Rca Corporation Fabrication method for a dual gate field-effect transistor
US4111326A (en) * 1976-03-04 1978-09-05 Becton, Dickinson And Company Closure for air evacuated container
DE2631873C2 (de) * 1976-07-15 1986-07-31 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung eines Halbleiterbauelements mit einem Schottky-Kontakt auf einem zu einem anderen Bereich justierten Gatebereich und mit kleinem Serienwiderstand
US4104672A (en) * 1976-10-29 1978-08-01 Bell Telephone Laboratories, Incorporated High power gallium arsenide schottky barrier field effect transistor
US4156879A (en) * 1977-02-07 1979-05-29 Hughes Aircraft Company Passivated V-gate GaAs field-effect transistor
US4193182A (en) * 1977-02-07 1980-03-18 Hughes Aircraft Company Passivated V-gate GaAs field-effect transistor and fabrication process therefor
US4111725A (en) * 1977-05-06 1978-09-05 Bell Telephone Laboratories, Incorporated Selective lift-off technique for fabricating gaas fets
US4213840A (en) * 1978-11-13 1980-07-22 Avantek, Inc. Low-resistance, fine-line semiconductor device and the method for its manufacture
US4222164A (en) * 1978-12-29 1980-09-16 International Business Machines Corporation Method of fabrication of self-aligned metal-semiconductor field effect transistors

Also Published As

Publication number Publication date
NO802032L (no) 1981-01-07
EP0022383A1 (fr) 1981-01-14
EP0022383B1 (fr) 1983-04-20
DE3062812D1 (en) 1983-05-26
FR2461358A1 (fr) 1981-01-30
US4326330A (en) 1982-04-27

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Legal Events

Date Code Title Description
ST Notification of lapse