FR2437046B2 - - Google Patents
Info
- Publication number
- FR2437046B2 FR2437046B2 FR7826803A FR7826803A FR2437046B2 FR 2437046 B2 FR2437046 B2 FR 2437046B2 FR 7826803 A FR7826803 A FR 7826803A FR 7826803 A FR7826803 A FR 7826803A FR 2437046 B2 FR2437046 B2 FR 2437046B2
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
- H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
- H10D30/686—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection using hot carriers produced by avalanche breakdown of PN junctions, e.g. floating gate avalanche injection MOS [FAMOS]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7826803A FR2437046A2 (fr) | 1976-10-20 | 1978-09-19 | Cellule de memoire a grille flottante |
| US06/073,152 US4305083A (en) | 1978-09-19 | 1979-09-07 | Single junction charge injector floating gate memory cell |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7631541A FR2368784A1 (fr) | 1976-10-20 | 1976-10-20 | Cellule de memoire a grille flottante a double injection |
| FR7826803A FR2437046A2 (fr) | 1976-10-20 | 1978-09-19 | Cellule de memoire a grille flottante |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2437046A2 FR2437046A2 (fr) | 1980-04-18 |
| FR2437046B2 true FR2437046B2 (en:Method) | 1982-02-26 |
Family
ID=32095143
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7826803A Granted FR2437046A2 (fr) | 1976-10-20 | 1978-09-19 | Cellule de memoire a grille flottante |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2437046A2 (en:Method) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03112167A (ja) * | 1989-09-27 | 1991-05-13 | Toshiba Corp | 不揮発性メモリセル |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3868187A (en) * | 1972-08-31 | 1975-02-25 | Tokyo Shibaura Electric Co | Avalanche injection type mos memory |
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1978
- 1978-09-19 FR FR7826803A patent/FR2437046A2/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2437046A2 (fr) | 1980-04-18 |