FR2414795A1 - Transistor a effet de champ - Google Patents
Transistor a effet de champInfo
- Publication number
- FR2414795A1 FR2414795A1 FR7900644A FR7900644A FR2414795A1 FR 2414795 A1 FR2414795 A1 FR 2414795A1 FR 7900644 A FR7900644 A FR 7900644A FR 7900644 A FR7900644 A FR 7900644A FR 2414795 A1 FR2414795 A1 FR 2414795A1
- Authority
- FR
- France
- Prior art keywords
- pref
- fet
- gallium
- iii
- arsenide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 title abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 title 1
- 229910052733 gallium Inorganic materials 0.000 title 1
- 125000005842 heteroatom Chemical group 0.000 title 1
- 239000004020 conductor Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910002058 ternary alloy Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
Abstract
L'invention concerne les transistors à effet de champ. Elle se rapporte à un transistor à effet de champ dans lequel un substrat semi-isolant porte une couche de matière de type n ou p sur laquelle les contacts de source, de drain et de grille sont formés Une couche supplémentaire de matière semiconductrice est placée entre la couche habituelle de type n ou p et la couche semi-isolante, cette couche supplémentaire étant en une matière différente de celle de la couche de type n ou p, le transistor ayant ainsi une hétérostructure. Application à la fabrication de transistors à effet de champ pour hyperfréquences.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB131278 | 1978-01-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2414795A1 true FR2414795A1 (fr) | 1979-08-10 |
Family
ID=9719800
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7900644A Withdrawn FR2414795A1 (fr) | 1978-01-12 | 1979-01-11 | Transistor a effet de champ |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE2901129A1 (fr) |
FR (1) | FR2414795A1 (fr) |
IT (1) | IT7919225A0 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2462027A1 (fr) * | 1979-07-20 | 1981-02-06 | Labo Electronique Physique | Dispositif semi-conducteur comportant une couche tampon isolante |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2386903A1 (fr) * | 1977-04-08 | 1978-11-03 | Thomson Csf | Transistor a effet de champ sur support a grande bande interdite |
-
1979
- 1979-01-11 IT IT7919225A patent/IT7919225A0/it unknown
- 1979-01-11 FR FR7900644A patent/FR2414795A1/fr not_active Withdrawn
- 1979-01-12 DE DE19792901129 patent/DE2901129A1/de not_active Withdrawn
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2386903A1 (fr) * | 1977-04-08 | 1978-11-03 | Thomson Csf | Transistor a effet de champ sur support a grande bande interdite |
Non-Patent Citations (1)
Title |
---|
EXBK/77 * |
Also Published As
Publication number | Publication date |
---|---|
IT7919225A0 (it) | 1979-01-11 |
DE2901129A1 (de) | 1979-07-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |