FR2411897B2 - - Google Patents
Info
- Publication number
- FR2411897B2 FR2411897B2 FR7737465A FR7737465A FR2411897B2 FR 2411897 B2 FR2411897 B2 FR 2411897B2 FR 7737465 A FR7737465 A FR 7737465A FR 7737465 A FR7737465 A FR 7737465A FR 2411897 B2 FR2411897 B2 FR 2411897B2
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7737465A FR2411897A2 (en) | 1977-12-13 | 1977-12-13 | RF sputtering of thin semiconductor films - using polarisation impedance and gas pressure gradient to give high deposition rate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7737465A FR2411897A2 (en) | 1977-12-13 | 1977-12-13 | RF sputtering of thin semiconductor films - using polarisation impedance and gas pressure gradient to give high deposition rate |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2411897A2 FR2411897A2 (en) | 1979-07-13 |
FR2411897B2 true FR2411897B2 (en) | 1980-08-22 |
Family
ID=9198769
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7737465A Granted FR2411897A2 (en) | 1977-12-13 | 1977-12-13 | RF sputtering of thin semiconductor films - using polarisation impedance and gas pressure gradient to give high deposition rate |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2411897A2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0346055B1 (en) * | 1988-06-06 | 1995-04-19 | Research Development Corporation Of Japan | Method for causing plasma reaction under atmospheric pressure |
JPH08259386A (en) * | 1995-03-20 | 1996-10-08 | Matsushita Electric Ind Co Ltd | Production of oxide thin film and chemical deposition apparatus therefor |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH322266A (en) * | 1954-10-01 | 1957-06-15 | Ohio Commw Eng Co | Process for plating a metal on an electrically conductive object, apparatus for carrying out this process and plated object obtained by this process |
US4066037A (en) * | 1975-12-17 | 1978-01-03 | Lfe Corportion | Apparatus for depositing dielectric films using a glow discharge |
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1977
- 1977-12-13 FR FR7737465A patent/FR2411897A2/en active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2411897A2 (en) | 1979-07-13 |