FR2395325A1 - Electroless nickel plating of silicon semiconductor substrate - in nickel bath contg. boron cpd. as reducing agent - Google Patents

Electroless nickel plating of silicon semiconductor substrate - in nickel bath contg. boron cpd. as reducing agent

Info

Publication number
FR2395325A1
FR2395325A1 FR7719135A FR7719135A FR2395325A1 FR 2395325 A1 FR2395325 A1 FR 2395325A1 FR 7719135 A FR7719135 A FR 7719135A FR 7719135 A FR7719135 A FR 7719135A FR 2395325 A1 FR2395325 A1 FR 2395325A1
Authority
FR
France
Prior art keywords
bath
contg
cpd
wafer
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7719135A
Other languages
French (fr)
Other versions
FR2395325B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silec Semi Conducteurs SA
Original Assignee
Silec Semi Conducteurs SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silec Semi Conducteurs SA filed Critical Silec Semi Conducteurs SA
Priority to FR7719135A priority Critical patent/FR2395325A1/en
Publication of FR2395325A1 publication Critical patent/FR2395325A1/en
Application granted granted Critical
Publication of FR2395325B1 publication Critical patent/FR2395325B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)

Abstract

The substrate wafer (a) has p-type doping, and is immersed in a Ni bath contg. a boron cpd. (b) as redn. agent. In the pref. process, wafer (a) has a surface with regions of different dopant types (n,p) and different dopant concns. and is immersed alternately in a Ni bath contg. hypophosphite as redn. agent, and a Ni bath, contg. cpd. (b). Alternatively, wafer (a) may be immersed in a Ni bath contg. both hypophosphite and cpd. (b). Wafer (a) is esp. a Si substrate, and cpd. (b) is a borohydride, esp. a borane. The Ni coating obtd. using the bath is preferentially deposited on the type 'p' zones and provides good ohmic contact, whereas, conventional baths contg. hypophosphite result in the Ni being deposited preferentially on n-type zones. When both p-and n-type zones are not present, bath still has the advantage that the amt. of B in the Ni is much less than the amt. of P obtd. in the Ni from bath.
FR7719135A 1977-06-22 1977-06-22 Electroless nickel plating of silicon semiconductor substrate - in nickel bath contg. boron cpd. as reducing agent Granted FR2395325A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7719135A FR2395325A1 (en) 1977-06-22 1977-06-22 Electroless nickel plating of silicon semiconductor substrate - in nickel bath contg. boron cpd. as reducing agent

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7719135A FR2395325A1 (en) 1977-06-22 1977-06-22 Electroless nickel plating of silicon semiconductor substrate - in nickel bath contg. boron cpd. as reducing agent

Publications (2)

Publication Number Publication Date
FR2395325A1 true FR2395325A1 (en) 1979-01-19
FR2395325B1 FR2395325B1 (en) 1981-04-10

Family

ID=9192415

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7719135A Granted FR2395325A1 (en) 1977-06-22 1977-06-22 Electroless nickel plating of silicon semiconductor substrate - in nickel bath contg. boron cpd. as reducing agent

Country Status (1)

Country Link
FR (1) FR2395325A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2567155A1 (en) * 1984-07-03 1986-01-10 Seregie Process for metallising nonconductive particles

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2023882A1 (en) * 1968-11-22 1970-08-21 Rca Corp
DE2144018A1 (en) * 1971-08-18 1973-08-02 Bbc Brown Boveri & Cie Doping semiconductors with boron - by diffusion from chemically deposited metal layer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2023882A1 (en) * 1968-11-22 1970-08-21 Rca Corp
DE2144018A1 (en) * 1971-08-18 1973-08-02 Bbc Brown Boveri & Cie Doping semiconductors with boron - by diffusion from chemically deposited metal layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2567155A1 (en) * 1984-07-03 1986-01-10 Seregie Process for metallising nonconductive particles

Also Published As

Publication number Publication date
FR2395325B1 (en) 1981-04-10

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Legal Events

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