FR2389237A1 - Diode a jonction hyperabrupte, et procede de fabrication d'une telle diode - Google Patents

Diode a jonction hyperabrupte, et procede de fabrication d'une telle diode

Info

Publication number
FR2389237A1
FR2389237A1 FR7712949A FR7712949A FR2389237A1 FR 2389237 A1 FR2389237 A1 FR 2389237A1 FR 7712949 A FR7712949 A FR 7712949A FR 7712949 A FR7712949 A FR 7712949A FR 2389237 A1 FR2389237 A1 FR 2389237A1
Authority
FR
France
Prior art keywords
conductivity type
junction diode
ridges
defining
type layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7712949A
Other languages
English (en)
Other versions
FR2389237B1 (fr
Inventor
Alain Chapard
Pierre Mehat-Gourdon
Josette Humbert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7712949A priority Critical patent/FR2389237A1/fr
Publication of FR2389237A1 publication Critical patent/FR2389237A1/fr
Application granted granted Critical
Publication of FR2389237B1 publication Critical patent/FR2389237B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92Capacitors having potential barriers
    • H01L29/93Variable capacitance diodes, e.g. varactors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

L'invention concerne une diode présentant, en courant alternatif, une variation très abrupte et relativement importante de capacité, lorsqu'on lui applique une polarisation inverse de valeur croissante. Sur un substrat N**+ on forme par épitaxie une épaisse couche N que l'on sculpte, par exemple par usinage ionique, suivant des nervures 21. Grâce à un masque de silice 33, on limite la formation d'une jonction P**+N; par diffusion de dopant P dans le matériau N, à la surface des nervures et à leur voisinage immédiat 34. La jonction obtenue présente les caractéristiques de la diode selon l'invention. Application en électronique à très haute fréquence.
FR7712949A 1977-04-29 1977-04-29 Diode a jonction hyperabrupte, et procede de fabrication d'une telle diode Granted FR2389237A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7712949A FR2389237A1 (fr) 1977-04-29 1977-04-29 Diode a jonction hyperabrupte, et procede de fabrication d'une telle diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7712949A FR2389237A1 (fr) 1977-04-29 1977-04-29 Diode a jonction hyperabrupte, et procede de fabrication d'une telle diode

Publications (2)

Publication Number Publication Date
FR2389237A1 true FR2389237A1 (fr) 1978-11-24
FR2389237B1 FR2389237B1 (fr) 1981-11-13

Family

ID=9190071

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7712949A Granted FR2389237A1 (fr) 1977-04-29 1977-04-29 Diode a jonction hyperabrupte, et procede de fabrication d'une telle diode

Country Status (1)

Country Link
FR (1) FR2389237A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2844921A1 (fr) * 2002-09-25 2004-03-26 St Microelectronics Sa Capacite variable

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2844921A1 (fr) * 2002-09-25 2004-03-26 St Microelectronics Sa Capacite variable
US6979852B2 (en) 2002-09-25 2005-12-27 Stmicroelectronics S.A. Variable capacitance

Also Published As

Publication number Publication date
FR2389237B1 (fr) 1981-11-13

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Legal Events

Date Code Title Description
ST Notification of lapse