FR2384356A1 - RECIPROCAL SEMICONDUCTOR HYPERFREQUENCY COMPONENT CONSTITUTING A VARIABLE IMPEDANCE WITH RESPONSE TIME LESS THAN 200 PICOSECONDS - Google Patents
RECIPROCAL SEMICONDUCTOR HYPERFREQUENCY COMPONENT CONSTITUTING A VARIABLE IMPEDANCE WITH RESPONSE TIME LESS THAN 200 PICOSECONDSInfo
- Publication number
- FR2384356A1 FR2384356A1 FR7707932A FR7707932A FR2384356A1 FR 2384356 A1 FR2384356 A1 FR 2384356A1 FR 7707932 A FR7707932 A FR 7707932A FR 7707932 A FR7707932 A FR 7707932A FR 2384356 A1 FR2384356 A1 FR 2384356A1
- Authority
- FR
- France
- Prior art keywords
- picoseconds
- response time
- component constituting
- variable impedance
- time less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000969 carrier Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Non-Reversible Transmitting Devices (AREA)
Abstract
a. Impédance hyperfréquence ajustable commandée par une tension. b. Structure semi-conductrice d'un type unique (n de préférence) associée à deux contacts ohmiques dont la densité de porteurs et les dimensions géométriques sont choisies pour que la tension de commande couvrant la gamme d'utilisation, le champ dans la structure passe par la valeur critique pr correspondant à la saturation de la vitesse des porteurs et reste inférieur à la valeur provoquant l'avalanche. c. Applications diverses aux circuits hyperfréquence.at. Adjustable microwave impedance controlled by voltage. b. Semiconductor structure of a single type (preferably n) associated with two ohmic contacts whose density of carriers and geometric dimensions are chosen so that the control voltage covering the range of use, the field in the structure passes through the critical value pr corresponding to the saturation of the speed of the carriers and remains lower than the value causing the avalanche. vs. Various applications to microwave circuits.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7707932A FR2384356A1 (en) | 1977-03-17 | 1977-03-17 | RECIPROCAL SEMICONDUCTOR HYPERFREQUENCY COMPONENT CONSTITUTING A VARIABLE IMPEDANCE WITH RESPONSE TIME LESS THAN 200 PICOSECONDS |
GB961178A GB1595404A (en) | 1977-03-17 | 1978-03-10 | Reciprocal passive microwave semiconductor devices |
DE19782811538 DE2811538A1 (en) | 1977-03-17 | 1978-03-16 | RECIPROCIAL HIGH-FREQUENCY SWITCHING ELEMENT |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7707932A FR2384356A1 (en) | 1977-03-17 | 1977-03-17 | RECIPROCAL SEMICONDUCTOR HYPERFREQUENCY COMPONENT CONSTITUTING A VARIABLE IMPEDANCE WITH RESPONSE TIME LESS THAN 200 PICOSECONDS |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2384356A1 true FR2384356A1 (en) | 1978-10-13 |
FR2384356B1 FR2384356B1 (en) | 1980-09-12 |
Family
ID=9188211
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7707932A Granted FR2384356A1 (en) | 1977-03-17 | 1977-03-17 | RECIPROCAL SEMICONDUCTOR HYPERFREQUENCY COMPONENT CONSTITUTING A VARIABLE IMPEDANCE WITH RESPONSE TIME LESS THAN 200 PICOSECONDS |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE2811538A1 (en) |
FR (1) | FR2384356A1 (en) |
GB (1) | GB1595404A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0964381A (en) * | 1995-08-25 | 1997-03-07 | Murata Mfg Co Ltd | Schottky barrier diode |
-
1977
- 1977-03-17 FR FR7707932A patent/FR2384356A1/en active Granted
-
1978
- 1978-03-10 GB GB961178A patent/GB1595404A/en not_active Expired
- 1978-03-16 DE DE19782811538 patent/DE2811538A1/en not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
GB1595404A (en) | 1981-08-12 |
FR2384356B1 (en) | 1980-09-12 |
DE2811538A1 (en) | 1978-09-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CL | Concession to grant licences | ||
ST | Notification of lapse |