FR2377706B1 - - Google Patents

Info

Publication number
FR2377706B1
FR2377706B1 FR7700739A FR7700739A FR2377706B1 FR 2377706 B1 FR2377706 B1 FR 2377706B1 FR 7700739 A FR7700739 A FR 7700739A FR 7700739 A FR7700739 A FR 7700739A FR 2377706 B1 FR2377706 B1 FR 2377706B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7700739A
Other languages
French (fr)
Other versions
FR2377706A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7700739A priority Critical patent/FR2377706A1/fr
Publication of FR2377706A1 publication Critical patent/FR2377706A1/fr
Application granted granted Critical
Publication of FR2377706B1 publication Critical patent/FR2377706B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
FR7700739A 1977-01-12 1977-01-12 Dispositif semi-conducteur integre du type darlington et son procede de fabrication Granted FR2377706A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7700739A FR2377706A1 (fr) 1977-01-12 1977-01-12 Dispositif semi-conducteur integre du type darlington et son procede de fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7700739A FR2377706A1 (fr) 1977-01-12 1977-01-12 Dispositif semi-conducteur integre du type darlington et son procede de fabrication

Publications (2)

Publication Number Publication Date
FR2377706A1 FR2377706A1 (fr) 1978-08-11
FR2377706B1 true FR2377706B1 (enrdf_load_html_response) 1981-05-29

Family

ID=9185392

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7700739A Granted FR2377706A1 (fr) 1977-01-12 1977-01-12 Dispositif semi-conducteur integre du type darlington et son procede de fabrication

Country Status (1)

Country Link
FR (1) FR2377706A1 (enrdf_load_html_response)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2449333A1 (fr) * 1979-02-14 1980-09-12 Radiotechnique Compelec Perfectionnement aux dispositifs semi-conducteurs de type darlington
FR2458146A1 (fr) * 1979-05-29 1980-12-26 Thomson Csf Structure integree comportant un transistor et trois diodes antisaturation
FR2458904A1 (fr) * 1979-06-12 1981-01-02 Thomson Csf Circuit integre monolithique equivalent a un transistor associe a trois diodes anti-saturation
IT1230025B (it) * 1988-10-28 1991-09-24 Sgs Thomson Microelectronics Dispositivo darlington con transistore di estrazione ed emettitore ultraleggero e relativo procedimento di fabbricazione
EP0509363B1 (de) * 1991-04-16 2000-09-27 Siemens Aktiengesellschaft Freilauf-Transistorschaltung

Also Published As

Publication number Publication date
FR2377706A1 (fr) 1978-08-11

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Legal Events

Date Code Title Description
ST Notification of lapse