FR2368198A1 - INDUCTION HEATING CIRCUITS FOR TREATMENT OF SEMICONDUCTOR BARS BY ZO FUSION - Google Patents

INDUCTION HEATING CIRCUITS FOR TREATMENT OF SEMICONDUCTOR BARS BY ZO FUSION

Info

Publication number
FR2368198A1
FR2368198A1 FR7730765A FR7730765A FR2368198A1 FR 2368198 A1 FR2368198 A1 FR 2368198A1 FR 7730765 A FR7730765 A FR 7730765A FR 7730765 A FR7730765 A FR 7730765A FR 2368198 A1 FR2368198 A1 FR 2368198A1
Authority
FR
France
Prior art keywords
induction heating
semiconductor bars
current source
tube
fusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7730765A
Other languages
French (fr)
Other versions
FR2368198B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Monsanto Co
Original Assignee
Monsanto Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Monsanto Co filed Critical Monsanto Co
Publication of FR2368198A1 publication Critical patent/FR2368198A1/en
Application granted granted Critical
Publication of FR2368198B1 publication Critical patent/FR2368198B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00Heating by electric, magnetic or electromagnetic fields
    • H05B6/02Induction heating
    • H05B6/22Furnaces without an endless core
    • H05B6/30Arrangements for remelting or zone melting

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Induction Heating (AREA)
  • Silicon Compounds (AREA)
  • Furnace Details (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

La présente invention concerne des circuits de chauffage par induction pour traitement de barreaux semi-conducteurs par fusion de zone. Dans les circuits selon la présente invention, l'enroulement de chauffage par induction 29 d'un barreau de silicium est directement inséré dans un circuit résonnant comprenant un condensateur 73 connecté à la sortie d'un tube triode 59. La grille du tube est commandée par une source de courant constant 87 pour limiter les instabilités. Il est également prévu de remplacer la source de courant constant 87 par une source de courant liée aux valeurs des tensions de plaque et de grille du tube 59. Amélioration du rendement du chauffage par induction dans un procédé de purification de barreaux semi-conducteurs par zone fondue.The present invention relates to induction heating circuits for treating semiconductor bars by zone melting. In circuits according to the present invention, the induction heating winding 29 of a silicon bar is directly inserted into a resonant circuit comprising a capacitor 73 connected to the output of a triode tube 59. The grid of the tube is controlled. by a constant current source 87 to limit instabilities. It is also planned to replace the constant current source 87 by a current source linked to the values of the plate and gate voltages of the tube 59. Improvement of the efficiency of the induction heating in a method of purification of semiconductor bars by zone fondue.

FR7730765A 1976-10-13 1977-10-12 INDUCTION HEATING CIRCUITS FOR TREATMENT OF SEMICONDUCTOR BARS BY ZO FUSION Granted FR2368198A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US73186976A 1976-10-13 1976-10-13

Publications (2)

Publication Number Publication Date
FR2368198A1 true FR2368198A1 (en) 1978-05-12
FR2368198B1 FR2368198B1 (en) 1982-05-14

Family

ID=24941270

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7730765A Granted FR2368198A1 (en) 1976-10-13 1977-10-12 INDUCTION HEATING CIRCUITS FOR TREATMENT OF SEMICONDUCTOR BARS BY ZO FUSION

Country Status (5)

Country Link
JP (1) JPS5347380A (en)
CA (1) CA1104214A (en)
DE (1) DE2745908A1 (en)
FR (1) FR2368198A1 (en)
GB (1) GB1563549A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1036509A (en) * 1950-06-05 1953-09-08 It Apparecchi Termoelettrici E Apparatus for heating dielectric materials in general by means of dielectric losses
US2781449A (en) * 1954-08-20 1957-02-12 Westinghouse Electric Corp Grid excitation
DE1014641B (en) * 1952-02-26 1957-08-29 Siemens Ag Automatic control device for self-excited high-frequency generators to adapt the load resistance to the limit resistance of the generator
FR1485100A (en) * 1965-07-02 1967-06-16 Philips Nv High frequency furnace
FR2126264A1 (en) * 1971-02-25 1972-10-06 Siemens Ag

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1036509A (en) * 1950-06-05 1953-09-08 It Apparecchi Termoelettrici E Apparatus for heating dielectric materials in general by means of dielectric losses
DE1014641B (en) * 1952-02-26 1957-08-29 Siemens Ag Automatic control device for self-excited high-frequency generators to adapt the load resistance to the limit resistance of the generator
US2781449A (en) * 1954-08-20 1957-02-12 Westinghouse Electric Corp Grid excitation
FR1485100A (en) * 1965-07-02 1967-06-16 Philips Nv High frequency furnace
FR2126264A1 (en) * 1971-02-25 1972-10-06 Siemens Ag

Also Published As

Publication number Publication date
DE2745908A1 (en) 1978-04-20
GB1563549A (en) 1980-03-26
JPS5347380A (en) 1978-04-27
FR2368198B1 (en) 1982-05-14
CA1104214A (en) 1981-06-30

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Legal Events

Date Code Title Description
ST Notification of lapse