FR2360998B1 - - Google Patents

Info

Publication number
FR2360998B1
FR2360998B1 FR7724317A FR7724317A FR2360998B1 FR 2360998 B1 FR2360998 B1 FR 2360998B1 FR 7724317 A FR7724317 A FR 7724317A FR 7724317 A FR7724317 A FR 7724317A FR 2360998 B1 FR2360998 B1 FR 2360998B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7724317A
Other languages
French (fr)
Other versions
FR2360998A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/793,493 external-priority patent/US4127932A/en
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2360998A1 publication Critical patent/FR2360998A1/fr
Application granted granted Critical
Publication of FR2360998B1 publication Critical patent/FR2360998B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
FR7724317A 1976-08-06 1977-08-05 Procede de realisation de photodiodes a eclairement anterieur Granted FR2360998A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US71239276A 1976-08-06 1976-08-06
US05/793,493 US4127932A (en) 1976-08-06 1977-05-04 Method of fabricating silicon photodiodes

Publications (2)

Publication Number Publication Date
FR2360998A1 FR2360998A1 (fr) 1978-03-03
FR2360998B1 true FR2360998B1 (zh) 1982-04-09

Family

ID=27108828

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7724317A Granted FR2360998A1 (fr) 1976-08-06 1977-08-05 Procede de realisation de photodiodes a eclairement anterieur

Country Status (5)

Country Link
JP (1) JPS5341193A (zh)
CA (1) CA1078948A (zh)
DE (1) DE2734726C2 (zh)
FR (1) FR2360998A1 (zh)
GB (1) GB1561953A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2778047C1 (ru) * 2021-11-30 2022-08-12 Акционерное общество "Научно-исследовательский институт "Полюс" им. М.Ф. Стельмаха" Способ приема оптических сигналов

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3001899A1 (de) * 1980-01-19 1981-07-23 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Planar-fototransistor
JPS5789271A (en) * 1980-11-25 1982-06-03 Moririka:Kk Compound semiconductor element
JPS57104275A (en) * 1980-12-19 1982-06-29 Nec Corp Light receiving element
US4616247A (en) * 1983-11-10 1986-10-07 At&T Bell Laboratories P-I-N and avalanche photodiodes
CA1301895C (en) * 1989-01-12 1992-05-26 Robert J. Mcintyre Silicon avalanche photodiode with low multiplication noise
JP2002151729A (ja) 2000-11-13 2002-05-24 Sony Corp 半導体装置及びその製造方法
CN114975672B (zh) * 2021-02-26 2024-10-22 中国科学院半导体研究所 背入射近红外增强硅雪崩光电探测器的结构及制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3244567A (en) * 1962-09-10 1966-04-05 Trw Semiconductors Inc Impurity diffusion method
US3534231A (en) * 1968-02-15 1970-10-13 Texas Instruments Inc Low bulk leakage current avalanche photodiode
US3886579A (en) * 1972-07-28 1975-05-27 Hitachi Ltd Avalanche photodiode
JPS49116957A (zh) * 1972-10-25 1974-11-08
JPS5031777A (zh) * 1973-07-21 1975-03-28

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2778047C1 (ru) * 2021-11-30 2022-08-12 Акционерное общество "Научно-исследовательский институт "Полюс" им. М.Ф. Стельмаха" Способ приема оптических сигналов

Also Published As

Publication number Publication date
GB1561953A (en) 1980-03-05
CA1078948A (en) 1980-06-03
JPS6155791B2 (zh) 1986-11-29
FR2360998A1 (fr) 1978-03-03
JPS5341193A (en) 1978-04-14
DE2734726C2 (de) 1987-04-16
DE2734726A1 (de) 1978-02-09

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