FR2360998B1 - - Google Patents
Info
- Publication number
- FR2360998B1 FR2360998B1 FR7724317A FR7724317A FR2360998B1 FR 2360998 B1 FR2360998 B1 FR 2360998B1 FR 7724317 A FR7724317 A FR 7724317A FR 7724317 A FR7724317 A FR 7724317A FR 2360998 B1 FR2360998 B1 FR 2360998B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US71239276A | 1976-08-06 | 1976-08-06 | |
| US05/793,493 US4127932A (en) | 1976-08-06 | 1977-05-04 | Method of fabricating silicon photodiodes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2360998A1 FR2360998A1 (fr) | 1978-03-03 |
| FR2360998B1 true FR2360998B1 (pt) | 1982-04-09 |
Family
ID=27108828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7724317A Granted FR2360998A1 (fr) | 1976-08-06 | 1977-08-05 | Procede de realisation de photodiodes a eclairement anterieur |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5341193A (pt) |
| CA (1) | CA1078948A (pt) |
| DE (1) | DE2734726A1 (pt) |
| FR (1) | FR2360998A1 (pt) |
| GB (1) | GB1561953A (pt) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2778047C1 (ru) * | 2021-11-30 | 2022-08-12 | Акционерное общество "Научно-исследовательский институт "Полюс" им. М.Ф. Стельмаха" | Способ приема оптических сигналов |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3001899A1 (de) * | 1980-01-19 | 1981-07-23 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Planar-fototransistor |
| JPS5789271A (en) * | 1980-11-25 | 1982-06-03 | Moririka:Kk | Compound semiconductor element |
| JPS57104275A (en) * | 1980-12-19 | 1982-06-29 | Nec Corp | Light receiving element |
| US4616247A (en) * | 1983-11-10 | 1986-10-07 | At&T Bell Laboratories | P-I-N and avalanche photodiodes |
| CA1301895C (en) * | 1989-01-12 | 1992-05-26 | Robert J. Mcintyre | Silicon avalanche photodiode with low multiplication noise |
| JP2002151729A (ja) | 2000-11-13 | 2002-05-24 | Sony Corp | 半導体装置及びその製造方法 |
| CN114975672A (zh) * | 2021-02-26 | 2022-08-30 | 中国科学院半导体研究所 | 背入射近红外增强硅雪崩光电探测器的结构及制备方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3244567A (en) * | 1962-09-10 | 1966-04-05 | Trw Semiconductors Inc | Impurity diffusion method |
| US3534231A (en) * | 1968-02-15 | 1970-10-13 | Texas Instruments Inc | Low bulk leakage current avalanche photodiode |
| US3886579A (en) * | 1972-07-28 | 1975-05-27 | Hitachi Ltd | Avalanche photodiode |
| JPS49116957A (pt) * | 1972-10-25 | 1974-11-08 | ||
| JPS5031777A (pt) * | 1973-07-21 | 1975-03-28 |
-
1977
- 1977-06-28 CA CA281,617A patent/CA1078948A/en not_active Expired
- 1977-08-02 DE DE19772734726 patent/DE2734726A1/de active Granted
- 1977-08-05 FR FR7724317A patent/FR2360998A1/fr active Granted
- 1977-08-05 GB GB3288177A patent/GB1561953A/en not_active Expired
- 1977-08-06 JP JP9376277A patent/JPS5341193A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2778047C1 (ru) * | 2021-11-30 | 2022-08-12 | Акционерное общество "Научно-исследовательский институт "Полюс" им. М.Ф. Стельмаха" | Способ приема оптических сигналов |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6155791B2 (pt) | 1986-11-29 |
| JPS5341193A (en) | 1978-04-14 |
| FR2360998A1 (fr) | 1978-03-03 |
| DE2734726C2 (pt) | 1987-04-16 |
| CA1078948A (en) | 1980-06-03 |
| GB1561953A (en) | 1980-03-05 |
| DE2734726A1 (de) | 1978-02-09 |