FR2349217B1 - - Google Patents

Info

Publication number
FR2349217B1
FR2349217B1 FR7612063A FR7612063A FR2349217B1 FR 2349217 B1 FR2349217 B1 FR 2349217B1 FR 7612063 A FR7612063 A FR 7612063A FR 7612063 A FR7612063 A FR 7612063A FR 2349217 B1 FR2349217 B1 FR 2349217B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7612063A
Other languages
French (fr)
Other versions
FR2349217A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7612063A priority Critical patent/FR2349217A1/fr
Priority to GB1650877A priority patent/GB1585503A/en
Priority to IT4908577A priority patent/IT1086889B/it
Publication of FR2349217A1 publication Critical patent/FR2349217A1/fr
Application granted granted Critical
Publication of FR2349217B1 publication Critical patent/FR2349217B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/735Lateral transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821Combination of lateral and vertical transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
FR7612063A 1976-04-23 1976-04-23 Transistor de type lateral a anneau externe,et circuit de protection comportant un tel transistor Granted FR2349217A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR7612063A FR2349217A1 (fr) 1976-04-23 1976-04-23 Transistor de type lateral a anneau externe,et circuit de protection comportant un tel transistor
GB1650877A GB1585503A (en) 1976-04-23 1977-04-20 Outer-ring lateral transistor and a protection circuit comprising a transistor of this type
IT4908577A IT1086889B (it) 1976-04-23 1977-04-22 Transistor di tipo industriale ad anello esterno e circuito di protezione comportante un tale transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7612063A FR2349217A1 (fr) 1976-04-23 1976-04-23 Transistor de type lateral a anneau externe,et circuit de protection comportant un tel transistor

Publications (2)

Publication Number Publication Date
FR2349217A1 FR2349217A1 (fr) 1977-11-18
FR2349217B1 true FR2349217B1 (fi) 1978-11-03

Family

ID=9172237

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7612063A Granted FR2349217A1 (fr) 1976-04-23 1976-04-23 Transistor de type lateral a anneau externe,et circuit de protection comportant un tel transistor

Country Status (3)

Country Link
FR (1) FR2349217A1 (fi)
GB (1) GB1585503A (fi)
IT (1) IT1086889B (fi)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3638923A1 (de) * 1986-11-14 1988-05-26 Telefunken Electronic Gmbh Integrierte schaltungsanordnung
DE3813436A1 (de) * 1988-04-21 1989-11-02 Siemens Ag Schaltungsanordnung zur verhinderung von substratstroemen

Also Published As

Publication number Publication date
FR2349217A1 (fr) 1977-11-18
IT1086889B (it) 1985-05-31
GB1585503A (en) 1981-03-04

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