FR2344132B1 - - Google Patents

Info

Publication number
FR2344132B1
FR2344132B1 FR7606717A FR7606717A FR2344132B1 FR 2344132 B1 FR2344132 B1 FR 2344132B1 FR 7606717 A FR7606717 A FR 7606717A FR 7606717 A FR7606717 A FR 7606717A FR 2344132 B1 FR2344132 B1 FR 2344132B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7606717A
Other versions
FR2344132A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7606717A priority Critical patent/FR2344132A1/fr
Priority to US05/773,834 priority patent/US4122345A/en
Priority to GB9588/77A priority patent/GB1558911A/en
Priority to DE19772710310 priority patent/DE2710310A1/de
Publication of FR2344132A1 publication Critical patent/FR2344132A1/fr
Application granted granted Critical
Publication of FR2344132B1 publication Critical patent/FR2344132B1/fr
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/20Measuring radiation intensity with scintillation detectors
    • G01T1/2006Measuring radiation intensity with scintillation detectors using a combination of a scintillator and photodetector which measures the means radiation intensity
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20Light-sensitive devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0232Optical elements or arrangements associated with the device
    • H01L31/02322Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281Shape of the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H01L31/118Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
FR7606717A 1976-03-09 1976-03-09 Detecteur de rayonnement ionisant a semi-conducteur Granted FR2344132A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR7606717A FR2344132A1 (fr) 1976-03-09 1976-03-09 Detecteur de rayonnement ionisant a semi-conducteur
US05/773,834 US4122345A (en) 1976-03-09 1977-03-02 Semiconductor detector for detecting ionizing radiation
GB9588/77A GB1558911A (en) 1976-03-09 1977-03-07 Semiconductor detector for detecting ionizing radiation
DE19772710310 DE2710310A1 (de) 1976-03-09 1977-03-09 Halbleiterdetektor fuer ionisierende strahlung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7606717A FR2344132A1 (fr) 1976-03-09 1976-03-09 Detecteur de rayonnement ionisant a semi-conducteur

Publications (2)

Publication Number Publication Date
FR2344132A1 FR2344132A1 (fr) 1977-10-07
FR2344132B1 true FR2344132B1 (fr) 1978-08-25

Family

ID=9170170

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7606717A Granted FR2344132A1 (fr) 1976-03-09 1976-03-09 Detecteur de rayonnement ionisant a semi-conducteur

Country Status (4)

Country Link
US (1) US4122345A (fr)
DE (1) DE2710310A1 (fr)
FR (1) FR2344132A1 (fr)
GB (1) GB1558911A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1559664A (en) * 1977-02-17 1980-01-23 Tokyo Shibaura Electric Co Semiconductor radiation detector
FR2600177B1 (fr) * 1986-06-13 1988-08-19 Thomson Csf Procede de fabrication d'un intensificateur d'images radiologiques et intensificateur d'images radiologiques ainsi obtenu

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL299040A (fr) * 1962-11-08 1900-01-01
US3628017A (en) * 1970-06-18 1971-12-14 Itek Corp Ultraviolet light-sensitive cell using a substantially chemically unchanged semiconductor electrode in an electrolyte
US4029962A (en) * 1975-06-23 1977-06-14 Texas Instruments Incorporated Arrays for infrared image detection

Also Published As

Publication number Publication date
US4122345A (en) 1978-10-24
DE2710310A1 (de) 1977-09-15
GB1558911A (en) 1980-01-09
FR2344132A1 (fr) 1977-10-07

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Legal Events

Date Code Title Description
ST Notification of lapse