FR2337432B1 - - Google Patents

Info

Publication number
FR2337432B1
FR2337432B1 FR7539963A FR7539963A FR2337432B1 FR 2337432 B1 FR2337432 B1 FR 2337432B1 FR 7539963 A FR7539963 A FR 7539963A FR 7539963 A FR7539963 A FR 7539963A FR 2337432 B1 FR2337432 B1 FR 2337432B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7539963A
Other languages
French (fr)
Other versions
FR2337432A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7539963A priority Critical patent/FR2337432A1/fr
Priority to DE19762657822 priority patent/DE2657822A1/de
Priority to AU20909/76A priority patent/AU506891B2/en
Priority to GB54060/76A priority patent/GB1571621A/en
Priority to NL7614383A priority patent/NL7614383A/xx
Priority to SE7614560A priority patent/SE7614560L/xx
Priority to CH1636176A priority patent/CH609489A5/xx
Priority to JP15661676A priority patent/JPS5283080A/ja
Publication of FR2337432A1 publication Critical patent/FR2337432A1/fr
Priority to US05/907,819 priority patent/US4148055A/en
Application granted granted Critical
Publication of FR2337432B1 publication Critical patent/FR2337432B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/643—Combinations of non-inverted vertical BJTs and inverted vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/1414—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
FR7539963A 1975-12-29 1975-12-29 Perfectionnement a la structure des circuits integres a transistors bipolaires complementaires et procede d'obtention Granted FR2337432A1 (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FR7539963A FR2337432A1 (fr) 1975-12-29 1975-12-29 Perfectionnement a la structure des circuits integres a transistors bipolaires complementaires et procede d'obtention
DE19762657822 DE2657822A1 (de) 1975-12-29 1976-12-21 Integrierte schaltung mit komplementaeren bipolaren transistoren
GB54060/76A GB1571621A (en) 1975-12-29 1976-12-24 Integrated circuits and their manufacture
NL7614383A NL7614383A (nl) 1975-12-29 1976-12-24 Geintegreerde schakeling met komplementaire bi- polaire transistoren.
AU20909/76A AU506891B2 (en) 1975-12-29 1976-12-24 Complementary bipolar transistors
SE7614560A SE7614560L (sv) 1975-12-29 1976-12-27 Integrerad krets med komplementera bipolera transistorer och sett att framstella denna krets
CH1636176A CH609489A5 (en) 1975-12-29 1976-12-27 Integrated circuit having complementary bipolar transistors
JP15661676A JPS5283080A (en) 1975-12-29 1976-12-27 Ic and method of producing same
US05/907,819 US4148055A (en) 1975-12-29 1978-05-19 Integrated circuit having complementary bipolar transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7539963A FR2337432A1 (fr) 1975-12-29 1975-12-29 Perfectionnement a la structure des circuits integres a transistors bipolaires complementaires et procede d'obtention

Publications (2)

Publication Number Publication Date
FR2337432A1 FR2337432A1 (fr) 1977-07-29
FR2337432B1 true FR2337432B1 (OSRAM) 1979-06-22

Family

ID=9164256

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7539963A Granted FR2337432A1 (fr) 1975-12-29 1975-12-29 Perfectionnement a la structure des circuits integres a transistors bipolaires complementaires et procede d'obtention

Country Status (8)

Country Link
JP (1) JPS5283080A (OSRAM)
AU (1) AU506891B2 (OSRAM)
CH (1) CH609489A5 (OSRAM)
DE (1) DE2657822A1 (OSRAM)
FR (1) FR2337432A1 (OSRAM)
GB (1) GB1571621A (OSRAM)
NL (1) NL7614383A (OSRAM)
SE (1) SE7614560L (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5470781A (en) * 1977-11-16 1979-06-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacture
US4338622A (en) * 1979-06-29 1982-07-06 International Business Machines Corporation Self-aligned semiconductor circuits and process therefor
US4539742A (en) * 1981-06-22 1985-09-10 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device and method for manufacturing the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3624467A (en) * 1969-02-17 1971-11-30 Texas Instruments Inc Monolithic integrated-circuit structure and method of fabrication
NL7107040A (OSRAM) * 1971-05-22 1972-11-24
DE2212168C2 (de) * 1972-03-14 1982-10-21 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte Halbleiteranordnung
US3904450A (en) * 1974-04-26 1975-09-09 Bell Telephone Labor Inc Method of fabricating injection logic integrated circuits using oxide isolation

Also Published As

Publication number Publication date
AU2090976A (en) 1978-06-29
FR2337432A1 (fr) 1977-07-29
JPS5283080A (en) 1977-07-11
DE2657822A1 (de) 1977-07-07
DE2657822C2 (OSRAM) 1989-10-05
AU506891B2 (en) 1980-01-24
CH609489A5 (en) 1979-02-28
GB1571621A (en) 1980-07-16
SE7614560L (sv) 1977-06-30
NL7614383A (nl) 1977-07-01
JPS5514539B2 (OSRAM) 1980-04-17

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Legal Events

Date Code Title Description
CA Change of address
CD Change of name or company name
ST Notification of lapse