FR2337425B1 - - Google Patents

Info

Publication number
FR2337425B1
FR2337425B1 FR7635305A FR7635305A FR2337425B1 FR 2337425 B1 FR2337425 B1 FR 2337425B1 FR 7635305 A FR7635305 A FR 7635305A FR 7635305 A FR7635305 A FR 7635305A FR 2337425 B1 FR2337425 B1 FR 2337425B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7635305A
Other languages
French (fr)
Other versions
FR2337425A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2337425A1 publication Critical patent/FR2337425A1/fr
Application granted granted Critical
Publication of FR2337425B1 publication Critical patent/FR2337425B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28537Deposition of Schottky electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/64Electrodes comprising a Schottky barrier to a semiconductor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/909Controlled atmosphere

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
FR7635305A 1975-12-31 1976-11-19 Procede de fabrication de diodes a barriere de schottky presentant une hauteur de barriere amelioree Granted FR2337425A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/645,766 US3987216A (en) 1975-12-31 1975-12-31 Method of forming schottky barrier junctions having improved barrier height

Publications (2)

Publication Number Publication Date
FR2337425A1 FR2337425A1 (fr) 1977-07-29
FR2337425B1 true FR2337425B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1980-09-05

Family

ID=24590404

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7635305A Granted FR2337425A1 (fr) 1975-12-31 1976-11-19 Procede de fabrication de diodes a barriere de schottky presentant une hauteur de barriere amelioree

Country Status (4)

Country Link
US (1) US3987216A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5950115B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2654416A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2337425A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4128670A (en) * 1977-11-11 1978-12-05 International Business Machines Corporation Fabrication method for integrated circuits with polysilicon lines having low sheet resistance
US4425379A (en) 1981-02-11 1984-01-10 Fairchild Camera & Instrument Corporation Polycrystalline silicon Schottky diode array
US4373966A (en) * 1981-04-30 1983-02-15 International Business Machines Corporation Forming Schottky barrier diodes by depositing aluminum silicon and copper or binary alloys thereof and alloy-sintering
US4393096A (en) * 1981-11-16 1983-07-12 International Business Machines Corporation Aluminum-copper alloy evaporated films with low via resistance
JPS5898228A (ja) * 1981-12-08 1983-06-11 Asahi Chem Ind Co Ltd 射出成形方法及びその装置
JPS59120429A (ja) * 1982-12-28 1984-07-12 Eng Plast Kk 発泡型物の成形法
EP0322860B1 (en) * 1987-12-28 1996-09-11 Fuji Electric Co., Ltd. Insulated gate semiconductor device
JPH0813482B2 (ja) * 1988-03-31 1996-02-14 山村硝子株式会社 閉栓部材及びその射出成形法
US5019533A (en) * 1989-05-26 1991-05-28 The United States Of America As Represented By The Adminstrator Of The National Aeronautics And Space Administration Thermal treatment of silicon integrated circuit chips to prevent and heal voids in aluminum metallization
CN1273277C (zh) 2000-12-27 2006-09-06 旭化成株式会社 发泡注塑成型方法
CN102272047B (zh) * 2009-02-04 2013-07-31 株式会社德山 多晶硅的制造方法
JP5977617B2 (ja) * 2012-08-08 2016-08-24 東京エレクトロン株式会社 被処理体のマイクロ波処理方法及びマイクロ波処理装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL262701A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1960-03-25
DE1289188B (de) * 1964-12-15 1969-02-13 Telefunken Patent Metallbasistransistor
US3382568A (en) * 1965-07-22 1968-05-14 Ibm Method for providing electrical connections to semiconductor devices
US3413157A (en) * 1965-10-21 1968-11-26 Ibm Solid state epitaxial growth of silicon by migration from a silicon-aluminum alloy deposit
US3555669A (en) * 1967-12-15 1971-01-19 Int Rectifier Corp Process for soldering silicon wafers to contacts
US3623925A (en) * 1969-01-10 1971-11-30 Fairchild Camera Instr Co Schottky-barrier diode process and devices
NL87258C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1969-01-15
US3780320A (en) * 1971-12-20 1973-12-18 Ibm Schottky barrier diode read-only memory
US3935586A (en) * 1972-06-29 1976-01-27 U.S. Philips Corporation Semiconductor device having a Schottky junction and method of manufacturing same
US3924264A (en) * 1973-05-17 1975-12-02 Ibm Schottky barrier device and circuit application

Also Published As

Publication number Publication date
FR2337425A1 (fr) 1977-07-29
US3987216A (en) 1976-10-19
JPS5325352A (en) 1978-03-09
JPS5950115B2 (ja) 1984-12-06
DE2654416A1 (de) 1977-07-07

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Legal Events

Date Code Title Description
ST Notification of lapse