FR2337425B1 - - Google Patents
Info
- Publication number
- FR2337425B1 FR2337425B1 FR7635305A FR7635305A FR2337425B1 FR 2337425 B1 FR2337425 B1 FR 2337425B1 FR 7635305 A FR7635305 A FR 7635305A FR 7635305 A FR7635305 A FR 7635305A FR 2337425 B1 FR2337425 B1 FR 2337425B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28537—Deposition of Schottky electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/909—Controlled atmosphere
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/645,766 US3987216A (en) | 1975-12-31 | 1975-12-31 | Method of forming schottky barrier junctions having improved barrier height |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2337425A1 FR2337425A1 (fr) | 1977-07-29 |
| FR2337425B1 true FR2337425B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1980-09-05 |
Family
ID=24590404
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7635305A Granted FR2337425A1 (fr) | 1975-12-31 | 1976-11-19 | Procede de fabrication de diodes a barriere de schottky presentant une hauteur de barriere amelioree |
Country Status (4)
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4128670A (en) * | 1977-11-11 | 1978-12-05 | International Business Machines Corporation | Fabrication method for integrated circuits with polysilicon lines having low sheet resistance |
| US4425379A (en) | 1981-02-11 | 1984-01-10 | Fairchild Camera & Instrument Corporation | Polycrystalline silicon Schottky diode array |
| US4373966A (en) * | 1981-04-30 | 1983-02-15 | International Business Machines Corporation | Forming Schottky barrier diodes by depositing aluminum silicon and copper or binary alloys thereof and alloy-sintering |
| US4393096A (en) * | 1981-11-16 | 1983-07-12 | International Business Machines Corporation | Aluminum-copper alloy evaporated films with low via resistance |
| JPS5898228A (ja) * | 1981-12-08 | 1983-06-11 | Asahi Chem Ind Co Ltd | 射出成形方法及びその装置 |
| JPS59120429A (ja) * | 1982-12-28 | 1984-07-12 | Eng Plast Kk | 発泡型物の成形法 |
| EP0322860B1 (en) * | 1987-12-28 | 1996-09-11 | Fuji Electric Co., Ltd. | Insulated gate semiconductor device |
| JPH0813482B2 (ja) * | 1988-03-31 | 1996-02-14 | 山村硝子株式会社 | 閉栓部材及びその射出成形法 |
| US5019533A (en) * | 1989-05-26 | 1991-05-28 | The United States Of America As Represented By The Adminstrator Of The National Aeronautics And Space Administration | Thermal treatment of silicon integrated circuit chips to prevent and heal voids in aluminum metallization |
| CN1273277C (zh) | 2000-12-27 | 2006-09-06 | 旭化成株式会社 | 发泡注塑成型方法 |
| CN102272047B (zh) * | 2009-02-04 | 2013-07-31 | 株式会社德山 | 多晶硅的制造方法 |
| JP5977617B2 (ja) * | 2012-08-08 | 2016-08-24 | 東京エレクトロン株式会社 | 被処理体のマイクロ波処理方法及びマイクロ波処理装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL262701A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1960-03-25 | |||
| DE1289188B (de) * | 1964-12-15 | 1969-02-13 | Telefunken Patent | Metallbasistransistor |
| US3382568A (en) * | 1965-07-22 | 1968-05-14 | Ibm | Method for providing electrical connections to semiconductor devices |
| US3413157A (en) * | 1965-10-21 | 1968-11-26 | Ibm | Solid state epitaxial growth of silicon by migration from a silicon-aluminum alloy deposit |
| US3555669A (en) * | 1967-12-15 | 1971-01-19 | Int Rectifier Corp | Process for soldering silicon wafers to contacts |
| US3623925A (en) * | 1969-01-10 | 1971-11-30 | Fairchild Camera Instr Co | Schottky-barrier diode process and devices |
| NL87258C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1969-01-15 | |||
| US3780320A (en) * | 1971-12-20 | 1973-12-18 | Ibm | Schottky barrier diode read-only memory |
| US3935586A (en) * | 1972-06-29 | 1976-01-27 | U.S. Philips Corporation | Semiconductor device having a Schottky junction and method of manufacturing same |
| US3924264A (en) * | 1973-05-17 | 1975-12-02 | Ibm | Schottky barrier device and circuit application |
-
1975
- 1975-12-31 US US05/645,766 patent/US3987216A/en not_active Expired - Lifetime
-
1976
- 1976-11-19 FR FR7635305A patent/FR2337425A1/fr active Granted
- 1976-12-01 DE DE19762654416 patent/DE2654416A1/de not_active Ceased
- 1976-12-02 JP JP51144076A patent/JPS5950115B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2337425A1 (fr) | 1977-07-29 |
| US3987216A (en) | 1976-10-19 |
| JPS5325352A (en) | 1978-03-09 |
| JPS5950115B2 (ja) | 1984-12-06 |
| DE2654416A1 (de) | 1977-07-07 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |