Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Laboratoire Central de Telecommunications SA
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Laboratoire Central de Telecommunications SA
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Publication date
Application filed by Laboratoire Central de Telecommunications SAfiledCriticalLaboratoire Central de Telecommunications SA
Priority to FR7536429ApriorityCriticalpatent/FR2333248A1/fr
Publication of FR2333248A1publicationCriticalpatent/FR2333248A1/fr
Application grantedgrantedCritical
Publication of FR2333248B3publicationCriticalpatent/FR2333248B3/fr
G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
G01R31/26—Testing of individual semiconductor devices
G01R31/2607—Circuits therefor
G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
G—PHYSICS
G01—MEASURING; TESTING
G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
G01R31/26—Testing of individual semiconductor devices
G01R31/2607—Circuits therefor
G01R31/2637—Circuits therefor for testing other individual devices
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Physics & Mathematics
(AREA)
General Physics & Mathematics
(AREA)
Engineering & Computer Science
(AREA)
Microelectronics & Electronic Packaging
(AREA)
Testing Of Individual Semiconductor Devices
(AREA)
FR7536429A1975-11-281975-11-28Circuit de mesure de caracteristiques electriques de structures mos
GrantedFR2333248A1
(fr)