FR2332055A1 - Procede pour fabriquer du silicium dope du type n, dont la resistance electrique specifique possede, suivant une direction radiale, un profil en forme de soucoupe - Google Patents

Procede pour fabriquer du silicium dope du type n, dont la resistance electrique specifique possede, suivant une direction radiale, un profil en forme de soucoupe

Info

Publication number
FR2332055A1
FR2332055A1 FR7635081A FR7635081A FR2332055A1 FR 2332055 A1 FR2332055 A1 FR 2332055A1 FR 7635081 A FR7635081 A FR 7635081A FR 7635081 A FR7635081 A FR 7635081A FR 2332055 A1 FR2332055 A1 FR 2332055A1
Authority
FR
France
Prior art keywords
saucer
radial direction
type
electrical resistance
following
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7635081A
Other languages
English (en)
French (fr)
Other versions
FR2332055B3 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2552621A external-priority patent/DE2552621C3/de
Priority claimed from DE19752553362 external-priority patent/DE2553362C2/de
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2332055A1 publication Critical patent/FR2332055A1/fr
Application granted granted Critical
Publication of FR2332055B3 publication Critical patent/FR2332055B3/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR7635081A 1975-11-24 1976-11-22 Procede pour fabriquer du silicium dope du type n, dont la resistance electrique specifique possede, suivant une direction radiale, un profil en forme de soucoupe Granted FR2332055A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2552621A DE2552621C3 (de) 1975-11-24 1975-11-24 Verfahren zum Herstellen von n-dotierten Siliciumeinkristallen mit in radialer Richtung tellerförmigem Profil des spezifischen Widerstandes
DE19752553362 DE2553362C2 (de) 1975-11-27 1975-11-27 Verfahren zum Herstellen von n-dotierten Siliciumeinkristallen mit in radialer Richtung tellerförmigem Profil des spezifischen Widerstands

Publications (2)

Publication Number Publication Date
FR2332055A1 true FR2332055A1 (fr) 1977-06-17
FR2332055B3 FR2332055B3 (enExample) 1980-10-17

Family

ID=25769639

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7635081A Granted FR2332055A1 (fr) 1975-11-24 1976-11-22 Procede pour fabriquer du silicium dope du type n, dont la resistance electrique specifique possede, suivant une direction radiale, un profil en forme de soucoupe

Country Status (4)

Country Link
JP (1) JPS5936819B2 (enExample)
DK (1) DK525276A (enExample)
FR (1) FR2332055A1 (enExample)
GB (1) GB1530948A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4836788A (en) * 1985-11-12 1989-06-06 Sony Corporation Production of solid-state image pick-up device with uniform distribution of dopants
JPS62257739A (ja) * 1986-04-30 1987-11-10 Toshiba Ceramics Co Ltd シリコンウエ−ハ及びその選別装置
RU2145128C1 (ru) * 1998-03-19 2000-01-27 Закрытое акционерное общество "ЭЛЛИНА-НТ" СПОСОБ ПОЛУЧЕНИЯ ЯДЕРНО-ЛЕГИРОВАННОГО КРЕМНИЯ n-ТИПА (ВАРИАНТЫ)
US10468148B2 (en) 2017-04-24 2019-11-05 Infineon Technologies Ag Apparatus and method for neutron transmutation doping of semiconductor wafers

Also Published As

Publication number Publication date
DK525276A (da) 1977-05-25
JPS5265661A (en) 1977-05-31
JPS5936819B2 (ja) 1984-09-06
GB1530948A (en) 1978-11-01
FR2332055B3 (enExample) 1980-10-17

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