FR2329054A1 - Procede et appareil de reproduction d'un paquet de charges - Google Patents

Procede et appareil de reproduction d'un paquet de charges

Info

Publication number
FR2329054A1
FR2329054A1 FR7626316A FR7626316A FR2329054A1 FR 2329054 A1 FR2329054 A1 FR 2329054A1 FR 7626316 A FR7626316 A FR 7626316A FR 7626316 A FR7626316 A FR 7626316A FR 2329054 A1 FR2329054 A1 FR 2329054A1
Authority
FR
France
Prior art keywords
reproducing
charges
package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7626316A
Other languages
English (en)
Other versions
FR2329054B1 (fr
Inventor
Lawrence G Heller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2329054A1 publication Critical patent/FR2329054A1/fr
Application granted granted Critical
Publication of FR2329054B1 publication Critical patent/FR2329054B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76825—Structures for regeneration, refreshing, leakage compensation or the like
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76808—Input structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H01L29/76875—Two-Phase CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Memories (AREA)
FR7626316A 1975-10-24 1976-08-25 Procede et appareil de reproduction d'un paquet de charges Granted FR2329054A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/625,425 US4047051A (en) 1975-10-24 1975-10-24 Method and apparatus for replicating a charge packet

Publications (2)

Publication Number Publication Date
FR2329054A1 true FR2329054A1 (fr) 1977-05-20
FR2329054B1 FR2329054B1 (fr) 1979-09-28

Family

ID=24506017

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7626316A Granted FR2329054A1 (fr) 1975-10-24 1976-08-25 Procede et appareil de reproduction d'un paquet de charges

Country Status (8)

Country Link
US (1) US4047051A (fr)
JP (1) JPS5252376A (fr)
CA (1) CA1092708A (fr)
DE (1) DE2644593A1 (fr)
FR (1) FR2329054A1 (fr)
GB (1) GB1542129A (fr)
IT (1) IT1074064B (fr)
NL (1) NL7610346A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2390802A1 (fr) * 1977-05-10 1978-12-08 Siemens Ag Dispositif numerique a transfert de charge

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4139784A (en) * 1977-08-02 1979-02-13 Rca Corporation CCD Input circuits
US4156152A (en) * 1977-10-17 1979-05-22 General Electric Company Charge transfer circuit with leakage current compensating means
US4135104A (en) * 1977-12-02 1979-01-16 Trw, Inc. Regenerator circuit
US4246496A (en) * 1978-07-17 1981-01-20 International Business Machines Corporation Voltage-to-charge transducer
US4239983A (en) * 1979-03-09 1980-12-16 International Business Machines Corporation Non-destructive charge transfer device differencing circuit
FR2453470A1 (fr) * 1979-04-06 1980-10-31 Thomson Csf Dispositif de lecture et d'injection de charges electriques et application d'un tel dispositif
FR2455772B1 (fr) * 1979-05-04 1986-01-17 Thomson Csf Dispositif a transfert de charges de soustraction et de generation de quantites de charges et systeme muni d'un tel dispositif
DE2936731A1 (de) * 1979-09-11 1981-04-02 Siemens AG, 1000 Berlin und 8000 München Integrierte schaltung mit zwei ctd-anordnungen
FR2471081B1 (fr) * 1979-11-30 1986-05-30 Thomson Csf Filtre a capacites commutees a transfert de charges
US4264930A (en) * 1979-12-10 1981-04-28 International Business Machines Corporation Charge coupled device incorporating Laplacian thresholding with TDI array
US4433257A (en) * 1980-03-03 1984-02-21 Tokyo Shibaura Denki Kabushiki Kaisha Voltage supply for operating a plurality of changing transistors in a manner which reduces minority carrier disruption of adjacent memory cells
US4631739A (en) * 1984-11-28 1986-12-23 Xerox Corporation High dynamic range charge amplifier
JPS62197995U (fr) * 1986-06-07 1987-12-16
US5054040A (en) * 1990-06-07 1991-10-01 California Institute Of Technology Non-destructive charge domain multiplier and process thereof
US5736757A (en) * 1994-07-07 1998-04-07 Massachusetts Institute Of Technology Charge-domain generation and replication devices

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2220175A1 (de) * 1971-05-03 1972-11-16 International Business Machines Corp., Armonk, N.Y. (V.St.A.) Schaltungsanordnung zur Abfühlung und/ oder Regeneration von in Form diskreter örtlicher Ladungszustände in einem Halbleiterkörper repräsentierter Information

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623132A (en) * 1970-12-14 1971-11-23 North American Rockwell Charge sensing circuit
AU461729B2 (en) * 1971-01-14 1975-06-05 Rca Corporation Charge coupled circuits
US3806772A (en) * 1972-02-07 1974-04-23 Fairchild Camera Instr Co Charge coupled amplifier
US3838438A (en) * 1973-03-02 1974-09-24 Bell Telephone Labor Inc Detection, inversion, and regeneration in charge transfer apparatus
US3937985A (en) * 1974-06-05 1976-02-10 Bell Telephone Laboratories, Incorporated Apparatus and method for regenerating charge

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2220175A1 (de) * 1971-05-03 1972-11-16 International Business Machines Corp., Armonk, N.Y. (V.St.A.) Schaltungsanordnung zur Abfühlung und/ oder Regeneration von in Form diskreter örtlicher Ladungszustände in einem Halbleiterkörper repräsentierter Information

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2390802A1 (fr) * 1977-05-10 1978-12-08 Siemens Ag Dispositif numerique a transfert de charge

Also Published As

Publication number Publication date
GB1542129A (en) 1979-03-14
NL7610346A (nl) 1977-04-26
JPS5527472B2 (fr) 1980-07-21
CA1092708A (fr) 1980-12-30
US4047051A (en) 1977-09-06
FR2329054B1 (fr) 1979-09-28
IT1074064B (it) 1985-04-17
DE2644593A1 (de) 1977-04-28
JPS5252376A (en) 1977-04-27

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Legal Events

Date Code Title Description
ST Notification of lapse