FR2327676A1 - Dispositif de traitement de signaux par dispositif a transfert de charge - Google Patents

Dispositif de traitement de signaux par dispositif a transfert de charge

Info

Publication number
FR2327676A1
FR2327676A1 FR7344491A FR7344491A FR2327676A1 FR 2327676 A1 FR2327676 A1 FR 2327676A1 FR 7344491 A FR7344491 A FR 7344491A FR 7344491 A FR7344491 A FR 7344491A FR 2327676 A1 FR2327676 A1 FR 2327676A1
Authority
FR
France
Prior art keywords
signal processing
charge transfer
processing device
transfer device
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7344491A
Other languages
English (en)
Other versions
FR2327676B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of FR2327676A1 publication Critical patent/FR2327676A1/fr
Application granted granted Critical
Publication of FR2327676B1 publication Critical patent/FR2327676B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/287—Organisation of a multiplicity of shift registers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816—Output structures
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H15/00—Transversal filters
    • H03H15/02—Transversal filters using analogue shift registers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H15/00—Transversal filters
    • H03H2015/026—Matched filters in charge domain

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Networks Using Active Elements (AREA)
  • Filters That Use Time-Delay Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Analogue/Digital Conversion (AREA)
  • Electronic Switches (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
FR7344491A 1973-01-02 1973-12-13 Dispositif de traitement de signaux par dispositif a transfert de charge Granted FR2327676A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US320382A US3877056A (en) 1973-01-02 1973-01-02 Charge transfer device signal processing system
US05/534,262 US3953745A (en) 1973-01-02 1974-12-19 Charge transfer device signal processing system

Publications (2)

Publication Number Publication Date
FR2327676A1 true FR2327676A1 (fr) 1977-05-06
FR2327676B1 FR2327676B1 (fr) 1978-03-24

Family

ID=26982466

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7344491A Granted FR2327676A1 (fr) 1973-01-02 1973-12-13 Dispositif de traitement de signaux par dispositif a transfert de charge

Country Status (9)

Country Link
US (2) US3877056A (fr)
JP (1) JPS5741133B2 (fr)
BE (1) BE806359A (fr)
CA (1) CA1013820A (fr)
DE (1) DE2364870A1 (fr)
FR (1) FR2327676A1 (fr)
GB (1) GB1443969A (fr)
NL (1) NL7315312A (fr)
SE (2) SE399157B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2389899A1 (fr) * 1977-05-06 1978-12-01 Thomson Csf

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4107550A (en) * 1977-01-19 1978-08-15 International Business Machines Corporation Bucket brigade circuits
US4523290A (en) * 1974-07-22 1985-06-11 Hyatt Gilbert P Data processor architecture
US4445189A (en) * 1978-03-23 1984-04-24 Hyatt Gilbert P Analog memory for storing digital information
US5339275A (en) * 1970-12-28 1994-08-16 Hyatt Gilbert P Analog memory system
US5566103A (en) * 1970-12-28 1996-10-15 Hyatt; Gilbert P. Optical system having an analog image memory, an analog refresh circuit, and analog converters
US5619445A (en) * 1970-12-28 1997-04-08 Hyatt; Gilbert P. Analog memory system having a frequency domain transform processor
US5615142A (en) * 1970-12-28 1997-03-25 Hyatt; Gilbert P. Analog memory system storing and communicating frequency domain information
GB1442841A (en) * 1973-11-13 1976-07-14 Secr Defence Charge coupled devices
US4072977A (en) * 1974-08-13 1978-02-07 Texas Instruments Incorporated Read only memory utilizing charge coupled device structures
US3999152A (en) * 1974-10-21 1976-12-21 Hughes Aircraft Company CCD selective transversal filter
US3947705A (en) * 1974-10-24 1976-03-30 Texas Instruments Inc. Method and system for achieving and sampling programmable tap weights in charge coupled devices
US3949245A (en) * 1974-10-24 1976-04-06 Texas Instruments Incorporated Method and system for sensing charges at distributed points on a charge coupled device
DE2453669C2 (de) * 1974-11-12 1976-12-09 Siemens AG, 1000 Berlin und 8000 München Elektrische Filterschaltung
US3973138A (en) * 1975-05-05 1976-08-03 General Electric Company Bucket brigade transversal filter
US3969636A (en) * 1975-06-30 1976-07-13 General Electric Company Charge sensing circuit for charge transfer devices
DE2630085C3 (de) * 1975-07-21 1978-07-13 Hughes Aircraft Co., Culver City, Calif. (V.St.A.) CCD-Transversalfilter
US4004157A (en) * 1975-09-02 1977-01-18 General Electric Company Output circuit for charge transfer transversal filter
US4139783A (en) * 1975-09-02 1979-02-13 General Electric Company Single phase signal processing system utilizing charge transfer devices
US4100513A (en) * 1975-09-18 1978-07-11 Reticon Corporation Semiconductor filtering apparatus
US4099197A (en) * 1976-08-12 1978-07-04 Northern Telecom Limited Complementary input structure for charge coupled device
US4195273A (en) * 1976-10-29 1980-03-25 Hughes Aircraft Company CTD charge subtraction transversal filter
CA1105139A (fr) * 1976-12-08 1981-07-14 Ronald E. Crochiere Dispositif a transfert de charge a entree differentielle lineaire de division de charge
US4084256A (en) * 1976-12-16 1978-04-11 General Electric Company Sampled data analog multiplier apparatus
NL7702452A (nl) * 1977-03-08 1977-05-31 Philips Nv Ladderinrichting met weegfactorinstelmiddelen.
US4092725A (en) * 1977-03-28 1978-05-30 Hughes Aircraft Company Electronic transform system
US4126831A (en) * 1977-04-27 1978-11-21 Texas Instruments Incorporated Electronic phase detector circuit
FR2392392A1 (fr) * 1977-05-27 1978-12-22 Commissariat Energie Atomique Circuit de mesure de charge stockee dans un d.t.c.
US4336613A (en) * 1977-06-30 1982-06-22 Texas Instruments Incorporated Charge coupled device filters and modems incorporating such filters
CA1128189A (fr) * 1977-09-21 1982-07-20 Standard Oil Company Filtre de donnees captees et transmises par un groupe de seismometres implantes
JPS54110759A (en) * 1978-02-17 1979-08-30 Fujitsu Ltd Transversal filter
JPS54116861A (en) * 1978-03-03 1979-09-11 Toko Inc Delay line type band pass filter
FR2430694A1 (fr) * 1978-07-04 1980-02-01 Thomson Csf Dispositif de lecture d'une quantite de charges electriques, et filtre a transfert de charges muni d'un tel dispositif
FR2436468A1 (fr) * 1978-09-15 1980-04-11 Thomson Csf Element de memoire dynamique a transfert de charges, et application notamment a un registre a decalage
FR2442546A1 (fr) * 1978-11-21 1980-06-20 Thomson Csf Dispositif de filtrage utilisant le transfert de charges electriques dans un semi-conducteur
US4224575A (en) * 1978-11-29 1980-09-23 E-Systems, Inc. Phase/frequency controlled phase shift keyed signal carrier reconstruction circuit
JPS55100727A (en) * 1979-01-26 1980-07-31 Sony Corp Noncyclic transversal filter
US4298953A (en) * 1979-02-28 1981-11-03 Massachusetts Institute Of Technology Programmable zero-bias floating gate tapping method and apparatus
US4291286A (en) * 1979-12-17 1981-09-22 Ford Aerospace & Communications Corporation High bandwidth transversal filter
US4317134A (en) * 1980-05-12 1982-02-23 Eastman Kodak Company Method and apparatus for pattern noise correction
JPS60103934U (ja) * 1984-10-11 1985-07-16 富士通株式会社 電荷転送型信号変換装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3111645A (en) * 1959-05-01 1963-11-19 Gen Electric Waveform recognition system
US3252093A (en) * 1961-10-09 1966-05-17 Massachusetts Inst Technology Impulse noise suppression communication system utilizing matched filters and noise clipping
US3746883A (en) * 1971-10-04 1973-07-17 Rca Corp Charge transfer circuits

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2389899A1 (fr) * 1977-05-06 1978-12-01 Thomson Csf

Also Published As

Publication number Publication date
FR2327676B1 (fr) 1978-03-24
NL7315312A (fr) 1974-07-04
GB1443969A (en) 1976-07-28
SE399157B (sv) 1978-01-30
JPS4999453A (fr) 1974-09-19
US3877056A (en) 1975-04-08
US3953745A (en) 1976-04-27
CA1013820A (en) 1977-07-12
SE7613423L (sv) 1976-11-30
BE806359A (fr) 1974-02-15
JPS5741133B2 (fr) 1982-09-01
SE407884B (sv) 1979-04-23
DE2364870A1 (de) 1974-07-04

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Legal Events

Date Code Title Description
ST Notification of lapse