FR2327036A1 - Modified silica sol for polishing silicon and germanium - remaining stable without depolymerisation at high pH for rapid polishing - Google Patents

Modified silica sol for polishing silicon and germanium - remaining stable without depolymerisation at high pH for rapid polishing

Info

Publication number
FR2327036A1
FR2327036A1 FR7530771A FR7530771A FR2327036A1 FR 2327036 A1 FR2327036 A1 FR 2327036A1 FR 7530771 A FR7530771 A FR 7530771A FR 7530771 A FR7530771 A FR 7530771A FR 2327036 A1 FR2327036 A1 FR 2327036A1
Authority
FR
France
Prior art keywords
polishing
depolymerisation
germanium
silica sol
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7530771A
Other languages
French (fr)
Other versions
FR2327036B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Priority to FR7530771A priority Critical patent/FR2327036A1/en
Publication of FR2327036A1 publication Critical patent/FR2327036A1/en
Application granted granted Critical
Publication of FR2327036B1 publication Critical patent/FR2327036B1/fr
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Silicon Compounds (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

Si and Ge semiconductor materials are polished to a high degree of surface perfection using a modified colloidal SiO2-sol (a) having a pH 11-12.5, (11.8-12.3) (b) having an SiO2 concn. of 2-50 (5-30) wt.%, (c) in which the colloidal SiO2 particles are coated with chemically combined Al atoms to give a surface coverage of 1-50 (5-40) esp. 15-25 Al atoms on the surface/100 Si atoms on the surface of uncoated particles and (d) the particles having a specific surface area of 25-600 (59-300) esp. 75-200 m2/g. Polishing rates of about 150 mu/hr have been achieved, ef. 50 mu/hr for an unmodified SiO2. The high pH and stability also provide a high degree of scavenging and low haze.
FR7530771A 1975-10-08 1975-10-08 Modified silica sol for polishing silicon and germanium - remaining stable without depolymerisation at high pH for rapid polishing Granted FR2327036A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7530771A FR2327036A1 (en) 1975-10-08 1975-10-08 Modified silica sol for polishing silicon and germanium - remaining stable without depolymerisation at high pH for rapid polishing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7530771A FR2327036A1 (en) 1975-10-08 1975-10-08 Modified silica sol for polishing silicon and germanium - remaining stable without depolymerisation at high pH for rapid polishing

Publications (2)

Publication Number Publication Date
FR2327036A1 true FR2327036A1 (en) 1977-05-06
FR2327036B1 FR2327036B1 (en) 1983-04-01

Family

ID=9160940

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7530771A Granted FR2327036A1 (en) 1975-10-08 1975-10-08 Modified silica sol for polishing silicon and germanium - remaining stable without depolymerisation at high pH for rapid polishing

Country Status (1)

Country Link
FR (1) FR2327036A1 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2892797A (en) * 1956-02-17 1959-06-30 Du Pont Process for modifying the properties of a silica sol and product thereof
US3170273A (en) * 1963-01-10 1965-02-23 Monsanto Co Process for polishing semiconductor materials
FR2006054A1 (en) * 1968-04-11 1969-12-19 Wacker Chemie Gmbh
US3807979A (en) * 1972-05-08 1974-04-30 Philadelphia Quartz Co Quaternary ammonium silicate for polishing silicon metal

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2892797A (en) * 1956-02-17 1959-06-30 Du Pont Process for modifying the properties of a silica sol and product thereof
US3170273A (en) * 1963-01-10 1965-02-23 Monsanto Co Process for polishing semiconductor materials
FR2006054A1 (en) * 1968-04-11 1969-12-19 Wacker Chemie Gmbh
US3807979A (en) * 1972-05-08 1974-04-30 Philadelphia Quartz Co Quaternary ammonium silicate for polishing silicon metal

Also Published As

Publication number Publication date
FR2327036B1 (en) 1983-04-01

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Legal Events

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ST Notification of lapse