FR2323269B1 - - Google Patents
Info
- Publication number
- FR2323269B1 FR2323269B1 FR7626550A FR7626550A FR2323269B1 FR 2323269 B1 FR2323269 B1 FR 2323269B1 FR 7626550 A FR7626550 A FR 7626550A FR 7626550 A FR7626550 A FR 7626550A FR 2323269 B1 FR2323269 B1 FR 2323269B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Read Only Memory (AREA)
- Static Random-Access Memory (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US61060675A | 1975-09-05 | 1975-09-05 | |
US61081375A | 1975-09-05 | 1975-09-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2323269A1 FR2323269A1 (fr) | 1977-04-01 |
FR2323269B1 true FR2323269B1 (nl) | 1981-08-28 |
Family
ID=27086293
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7626550A Granted FR2323269A1 (fr) | 1975-09-05 | 1976-09-03 | Circuit multivibrateur |
Country Status (5)
Country | Link |
---|---|
DE (1) | DE2639507C3 (nl) |
FR (1) | FR2323269A1 (nl) |
GB (1) | GB1545087A (nl) |
IT (1) | IT1077054B (nl) |
NL (1) | NL172391C (nl) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56500109A (nl) * | 1979-03-13 | 1981-02-05 | ||
US4271487A (en) * | 1979-11-13 | 1981-06-02 | Ncr Corporation | Static volatile/non-volatile ram cell |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH509014A (de) * | 1969-01-21 | 1971-06-15 | Contraves Ag | Bistabile und umsteuerbare Flip-Flop-Schaltungsanordnung |
US3676717A (en) * | 1970-11-02 | 1972-07-11 | Ncr Co | Nonvolatile flip-flop memory cell |
DE2339289C2 (de) * | 1973-08-02 | 1975-02-06 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Bistabile Kippstufe mit MNOS-Transistoren |
-
1976
- 1976-08-25 GB GB3532876A patent/GB1545087A/en not_active Expired
- 1976-08-27 IT IT2663276A patent/IT1077054B/it active
- 1976-09-02 NL NL7609789A patent/NL172391C/nl not_active IP Right Cessation
- 1976-09-02 DE DE19762639507 patent/DE2639507C3/de not_active Expired
- 1976-09-03 FR FR7626550A patent/FR2323269A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
DE2639507A1 (de) | 1977-04-14 |
GB1545087A (en) | 1979-05-02 |
IT1077054B (it) | 1985-04-27 |
NL172391B (nl) | 1983-03-16 |
DE2639507C3 (de) | 1981-12-24 |
FR2323269A1 (fr) | 1977-04-01 |
NL7609789A (nl) | 1977-03-08 |
NL172391C (nl) | 1983-08-16 |
DE2639507B2 (de) | 1981-04-02 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |