FR2314265B1 - - Google Patents

Info

Publication number
FR2314265B1
FR2314265B1 FR7617676A FR7617676A FR2314265B1 FR 2314265 B1 FR2314265 B1 FR 2314265B1 FR 7617676 A FR7617676 A FR 7617676A FR 7617676 A FR7617676 A FR 7617676A FR 2314265 B1 FR2314265 B1 FR 2314265B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7617676A
Other versions
FR2314265A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2314265A1 publication Critical patent/FR2314265A1/fr
Application granted granted Critical
Publication of FR2314265B1 publication Critical patent/FR2314265B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32131—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
FR7617676A 1975-06-13 1976-06-11 Procede permettant de realiser des structures decapees par pulverisation cathodique Granted FR2314265A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2526382A DE2526382C3 (de) 1975-06-13 1975-06-13 Kathodenzerstäubungsverf ahren zur Herstellung geätzter Strukturen

Publications (2)

Publication Number Publication Date
FR2314265A1 FR2314265A1 (fr) 1977-01-07
FR2314265B1 true FR2314265B1 (fr) 1981-12-18

Family

ID=5948984

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7617676A Granted FR2314265A1 (fr) 1975-06-13 1976-06-11 Procede permettant de realiser des structures decapees par pulverisation cathodique

Country Status (7)

Country Link
US (1) US4049521A (fr)
JP (1) JPS6035820B2 (fr)
CA (1) CA1071578A (fr)
DE (1) DE2526382C3 (fr)
FR (1) FR2314265A1 (fr)
GB (1) GB1554282A (fr)
IT (1) IT1061545B (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0007805B1 (fr) * 1978-07-29 1983-02-16 Fujitsu Limited Procédé de revêtement des faces latérales de dispositifs semiconducteurs
DE3002194A1 (de) * 1980-01-22 1981-07-23 Berna AG Olten, Olten Vorrichtung zur (teil) beschichtung eines substrates durch kathodenzerstaeubung, vefahren zur beschichtung und deren anwendung
US4432132A (en) * 1981-12-07 1984-02-21 Bell Telephone Laboratories, Incorporated Formation of sidewall oxide layers by reactive oxygen ion etching to define submicron features
DE19712207B4 (de) * 1997-03-24 2006-03-16 ITT Mfg. Enterprises, Inc., Wilmington Wischhebel mit Verkleidung für eine Wischvorrichtung zum Säubern von Scheiben an Fahrzeugen

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3097154A (en) * 1959-01-13 1963-07-09 Nuclear Materials & Equipment Apparatus for method for etching objects
US3816198A (en) * 1969-09-22 1974-06-11 G Babcock Selective plasma etching of organic materials employing photolithographic techniques

Also Published As

Publication number Publication date
DE2526382B2 (de) 1979-03-01
GB1554282A (en) 1979-10-17
DE2526382A1 (de) 1976-12-23
FR2314265A1 (fr) 1977-01-07
JPS51151078A (en) 1976-12-25
CA1071578A (fr) 1980-02-12
US4049521A (en) 1977-09-20
JPS6035820B2 (ja) 1985-08-16
IT1061545B (it) 1983-04-30
DE2526382C3 (de) 1979-10-25

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Legal Events

Date Code Title Description
ST Notification of lapse